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1. 发明授权

US08236699B2 Contact patterning method with transition etch feedback 有权
标题翻译：具有过渡蚀刻反馈的接触图案化方法
公开(公告)号：US08236699B2
公开(公告)日：2012-08-07
申请号：US13021842
申请日：2011-02-07
申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
发明人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
IPC分类号： H01L21/311
CPC分类号： H01L21/76804 , H01L21/31116 , H01L22/26
摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
摘要翻译：提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

2. 发明授权

US07998869B2 Contact patterning method with transition etch feedback 有权
标题翻译：具有过渡蚀刻反馈的接触图案化方法
公开(公告)号：US07998869B2
公开(公告)日：2011-08-16
申请号：US12262860
申请日：2008-10-31
申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
发明人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
IPC分类号： H01L21/311
CPC分类号： H01L21/76804 , H01L21/31116 , H01L22/26
摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
摘要翻译：提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

3. 发明申请

US20100112729A1 CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK 有权
标题翻译：联系方式与转换ETCH反馈
公开(公告)号：US20100112729A1
公开(公告)日：2010-05-06
申请号：US12262860
申请日：2008-10-31
申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
发明人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
IPC分类号： H01L21/66
CPC分类号： H01L21/76804 , H01L21/31116 , H01L22/26
摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
摘要翻译：提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

4. 发明申请

US20110183443A1 CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK 有权
标题翻译：联系方式与转换ETCH反馈
公开(公告)号：US20110183443A1
公开(公告)日：2011-07-28
申请号：US13021842
申请日：2011-02-07
申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Cheng
发明人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Cheng
IPC分类号： H01L21/66
CPC分类号： H01L21/76804 , H01L21/31116 , H01L22/26
摘要： A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
摘要翻译：提供了一种在半导体器件和相关的计算机可读存储介质中形成接触孔的方法，所述介质的方法和程序步骤包括测量蚀刻室中氧的百分比，并控制蚀刻室中的氧的百分比以扩大接触孔顶部附近的临时内径。

5. 发明授权

US06897115B2 Method of fabricating non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US06897115B2
公开(公告)日：2005-05-24
申请号：US10643538
申请日：2003-08-19
申请人： In-Soo Cho , Jae-Min Yu , Byung-Goo Jeon , Jun-Yeoul You , Chang-Yup Lee
发明人： In-Soo Cho , Jae-Min Yu , Byung-Goo Jeon , Jun-Yeoul You , Chang-Yup Lee
IPC分类号： G11C7/00 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115
摘要： A method of fabricating a non-volatile memory device includes the steps of forming a lower conductive layer on a substrate, forming a lower and an upper sacrificial patterns on the substrate with the lower conductive layer, wherein the lower and upper sacrificial patterns include a trench exposing the lower conductive layer, forming mask spacers on sidewalls of the upper and lower sacrificial patterns, using the mask spacers and the upper sacrificial pattern as an etch mask, etching the exposed lower conductive layer to form a lower conductive pattern exposing the substrate, forming a plug conductive layer covering an entire surface of a substrate with the lower conductive pattern, and planarizingly etching the plug conductive layer until the lower sacrificial pattern is exposed, thereby forming a source plug in a gap region between the mask spacers that is connected to the substrate.
摘要翻译：一种制造非易失性存储器件的方法包括以下步骤：在衬底上形成下导电层，在下导电层上在衬底上形成下牺牲图形和上牺牲图案，其中下和下牺牲图案包括沟槽暴露下导电层，使用掩模间隔物和上牺牲图案作为蚀刻掩模在上和下牺牲图案的侧壁上形成掩模间隔物，蚀刻暴露的下导电层以形成露出基板的下导电图案，形成插入导电层，其覆盖具有下导电图案的基板的整个表面，并且平坦化地蚀刻插头导电层，直到下部牺牲图案露出为止，从而在连接到所述屏蔽间隔物之间的间隙区域中形成源极插塞基质。

6. 发明申请

US20120003761A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND FABRICATION SYSTEM OF SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件的制造方法和半导体器件的制造系统
公开(公告)号：US20120003761A1
公开(公告)日：2012-01-05
申请号：US12828404
申请日：2010-07-01
申请人： Won Song , Byung-Goo Jeon
发明人： Won Song , Byung-Goo Jeon
IPC分类号： H01L21/66 , G06F19/00
CPC分类号： H01L22/20 , H01L22/12 , Y10S438/949 , Y10S438/981
摘要： A method of fabricating a semiconductor device and a fabrication system of the semiconductor device are provided. The method includes sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film, forming a photoresist film on the dielectric film, performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern, and etching the dielectric film and the film to be etched using the photoresist film pattern.
摘要翻译：提供一种半导体器件的制造方法和半导体器件的制造系统。该方法包括顺序地形成待蚀刻的膜和电介质膜并测量电介质膜的厚度，在电介质膜上形成光致抗蚀剂膜，使用所测量的电介质膜的厚度进行光刻处理以形成光刻胶膜图案并且使用光致抗蚀剂膜图案蚀刻电介质膜和待蚀刻的膜。

7. 发明授权

US08232199B2 Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension 失效
标题翻译：制造半导体器件的方法包括具有所需临界尺寸的光致抗蚀剂图案
公开(公告)号：US08232199B2
公开(公告)日：2012-07-31
申请号：US12828404
申请日：2010-07-01
申请人： Won Song , Byung-Goo Jeon
发明人： Won Song , Byung-Goo Jeon
IPC分类号： H01L21/4763
CPC分类号： H01L22/20 , H01L22/12 , Y10S438/949 , Y10S438/981
摘要： A method of fabricating a semiconductor device and a fabrication system of the semiconductor device are provided. The method includes sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film, forming a photoresist film on the dielectric film, performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern, and etching the dielectric film and the film to be etched using the photoresist film pattern.
摘要翻译：提供一种半导体器件的制造方法和半导体器件的制造系统。该方法包括顺序地形成待蚀刻的膜和电介质膜并测量电介质膜的厚度，在电介质膜上形成光致抗蚀剂膜，使用所测量的电介质膜的厚度进行光刻处理以形成光刻胶膜图案并且使用光致抗蚀剂膜图案蚀刻电介质膜和待蚀刻的膜。

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