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1. 发明授权

US07871931B2 Method for chemical mechanical planarization of a metal layer located over a photoresist layer and a method for manufacturing a micro pixel array using the same 有权
标题翻译：位于光致抗蚀剂层之上的金属层的化学机械平面化方法以及使用该方法制造微型像素阵列的方法
公开(公告)号：US07871931B2
公开(公告)日：2011-01-18
申请号：US11231249
申请日：2005-09-20
申请人： Anthony DiCarlo , Jingqiu Chen , Yanghua He , James C. Baker , David A. Rothenbury
发明人： Anthony DiCarlo , Jingqiu Chen , Yanghua He , James C. Baker , David A. Rothenbury
IPC分类号： H01L21/302
CPC分类号： G03F7/40 , G02B26/0841
摘要： The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.
摘要翻译：本发明提供了一种用于平坦化金属层的方法和一种用于制造微像素阵列的方法。用于平坦化金属层的方法，但不限于，可以包括在光致抗蚀剂层上形成金属层，然后使用化学机械平坦化工艺平坦化金属层的步骤。

2. 发明授权

US08093688B2 Device comprising an ohmic via contact, and method of fabricating thereof 有权
标题翻译：包含欧姆通孔接点的装置及其制造方法
公开(公告)号：US08093688B2
公开(公告)日：2012-01-10
申请号：US12575629
申请日：2009-10-08
申请人： David A. Rothenbury , James D. Huffman
发明人： David A. Rothenbury , James D. Huffman
IPC分类号： H01L29/06
CPC分类号： B81C1/00095 , B81B2201/042 , B81B2207/07
摘要： Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.
摘要翻译：包含欧姆通孔接点的装置及其制造方法。优选实施例包括在衬底上形成金属层，在金属层上形成导电阻挡层，在导电阻挡层上沉积绝缘层，在绝缘层中形成露出导电阻挡层的开口，以及形成通孔接触在开幕。导电阻挡层通过防止形成可能降低导电性的氧化物层来保护金属层。

3. 发明申请

US20090188786A1 Hidden Micromirror Support Structure 有权
标题翻译：隐藏的微镜支撑结构
公开(公告)号：US20090188786A1
公开(公告)日：2009-07-30
申请号：US12419103
申请日：2009-04-06
申请人： David A. Rothenbury
发明人： David A. Rothenbury
IPC分类号： C23C14/34 , B29D11/00
CPC分类号： G02B26/0833
摘要： Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.
摘要翻译：用于微镜元件的方法和装置包括微反射镜，微反射镜具有从支撑结构向外设置的基本平坦的外表面，该支撑结构可操作以至少部分支撑微镜。所述支撑结构包括至少一层覆盖至少两个离散平面的层，所述至少两个离散平面基本上平行于微反射镜的外表面。在一个具体实施例中，支撑结构包括封装光阻胶塞的环形侧壁。

4. 发明申请

US20100025797A1 Device Comprising an Ohmic Via Contact, and Method of Fabricating Thereof 有权
标题翻译：包括欧姆接触的装置及其制造方法
公开(公告)号：US20100025797A1
公开(公告)日：2010-02-04
申请号：US12575629
申请日：2009-10-08
申请人： David A. Rothenbury , James D. Huffman
发明人： David A. Rothenbury , James D. Huffman
IPC分类号： H01L23/48 , H01L31/0232
CPC分类号： B81C1/00095 , B81B2201/042 , B81B2207/07
摘要： Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.
摘要翻译：包含欧姆通孔接点的装置及其制造方法。优选实施例包括在衬底上形成金属层，在金属层上形成导电阻挡层，在导电阻挡层上沉积绝缘层，在绝缘层中形成露出导电阻挡层的开口，以及形成通孔接触在开幕。导电阻挡层通过防止形成可能降低导电性的氧化物层来保护金属层。

5. 发明授权

US07529015B2 Hidden micromirror support structure 有权
标题翻译：隐藏的微镜支撑结构
公开(公告)号：US07529015B2
公开(公告)日：2009-05-05
申请号：US11477998
申请日：2006-06-29
申请人： David A. Rothenbury
发明人： David A. Rothenbury
IPC分类号： G02B26/00 , G02B26/08
CPC分类号： G02B26/0833
摘要： Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.
摘要翻译：用于微镜元件的方法和装置包括微反射镜，微反射镜具有从支撑结构向外设置的基本平坦的外表面，该支撑结构可操作以至少部分支撑微镜。所述支撑结构包括至少一层覆盖至少两个离散平面的层，所述至少两个离散平面基本上平行于微反射镜的外表面。在一个具体实施例中，支撑结构包括封装光阻胶塞的环形侧壁。

6. 发明授权

US07404909B2 Mirror including dielectric portions and a method of manufacturing the same 有权
标题翻译：包括电介质部分的镜子及其制造方法
公开(公告)号：US07404909B2
公开(公告)日：2008-07-29
申请号：US11567309
申请日：2006-12-06
申请人： David A. Rothenbury
发明人： David A. Rothenbury
IPC分类号： B44C1/22
CPC分类号： G02B26/0833
摘要： The invention provides a method for manufacturing a microelectronic device and a microelectronic device. The method for manufacturing the microelectronic device, without limitation, may include forming a first mirror layer over and within one or more openings in a sacrificial spacer layer, and forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings. The method may further include subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface and leaving dielectric portions along sidewalls of the one or more openings, and forming a second mirror layer over the first mirror layer and within the one or more openings, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls.
摘要翻译：本发明提供了一种用于制造微电子器件和微电子器件的方法。用于制造微电子器件的方法，但不限于，可包括在牺牲隔离层中的一个或多个开口之上并在其内部形成第一镜层，以及在第一镜层的上表面上形成电介质层，更多开口该方法还可以包括对介电层进行蚀刻，该蚀刻从上表面去除电介质层，并且使电介质部分沿着该一个或多个开口的侧壁留下电介质部分，并在第一镜面层上形成第二镜层一个或多个开口，电介质部分沿侧壁分隔第一镜层和第二镜层。

7. 发明申请

US20080002248A1 Hidden micromirror support structure 有权
标题翻译：隐藏的微镜支撑结构
公开(公告)号：US20080002248A1
公开(公告)日：2008-01-03
申请号：US11477998
申请日：2006-06-29
申请人： David A. Rothenbury
发明人： David A. Rothenbury
IPC分类号： G02B26/00
CPC分类号： G02B26/0833
摘要： Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.
摘要翻译：用于微镜元件的方法和装置包括微反射镜，微反射镜具有从支撑结构向外设置的基本平坦的外表面，该支撑结构可操作以至少部分支撑微镜。所述支撑结构包括至少一层覆盖至少两个离散平面的层，所述至少两个离散平面基本上平行于微反射镜的外表面。在一个具体实施例中，支撑结构包括封装光阻胶塞的环形侧壁。

8. 发明授权

US07924489B2 Hidden micromirror support structure 有权
标题翻译：隐藏的微镜支撑结构
公开(公告)号：US07924489B2
公开(公告)日：2011-04-12
申请号：US12419103
申请日：2009-04-06
申请人： David A. Rothenbury
发明人： David A. Rothenbury
IPC分类号： G02B26/08 , C23C14/00 , B29D11/00
CPC分类号： G02B26/0833
摘要： Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.
摘要翻译：用于微镜元件的方法和装置包括微反射镜，微反射镜具有从支撑结构向外设置的基本平坦的外表面，该支撑结构可操作以至少部分支撑微镜。所述支撑结构包括至少一层覆盖至少两个离散平面的层，所述至少两个离散平面基本上平行于微反射镜的外表面。在一个具体实施例中，支撑结构包括封装光阻胶塞的环形侧壁。

9. 发明授权

US07601624B2 Device comprising an ohmic via contact, and method of fabricating thereof 有权
标题翻译：包含欧姆通孔接点的装置及其制造方法
公开(公告)号：US07601624B2
公开(公告)日：2009-10-13
申请号：US11520378
申请日：2006-09-13
申请人： David A. Rothenbury , James D. Huffman
发明人： David A. Rothenbury , James D. Huffman
IPC分类号： H01L21/44
CPC分类号： B81C1/00095 , B81B2201/042 , B81B2207/07
摘要： Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.
摘要翻译：包含欧姆通孔接点的装置及其制造方法。优选实施例包括在衬底上形成金属层，在金属层上形成导电阻挡层，在导电阻挡层上沉积绝缘层，在绝缘层中形成露出导电阻挡层的开口，以及形成通孔接触在开幕。导电阻挡层通过防止形成可能降低导电性的氧化物层来保护金属层。

10. 发明申请

US20080064224A1 Device comprising an ohmic via contact, and method of fabricating thereof 有权
标题翻译：包含欧姆通孔接点的装置及其制造方法
公开(公告)号：US20080064224A1
公开(公告)日：2008-03-13
申请号：US11520378
申请日：2006-09-13
申请人： David A. Rothenbury , James D. Huffman
发明人： David A. Rothenbury , James D. Huffman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： B81C1/00095 , B81B2201/042 , B81B2207/07
摘要： Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.
摘要翻译：包含欧姆通孔接点的装置及其制造方法。优选实施例包括在衬底上形成金属层，在金属层上形成导电阻挡层，在导电阻挡层上沉积绝缘层，在绝缘层中形成露出导电阻挡层的开口，以及形成通孔接触在开幕。导电阻挡层通过防止形成可能降低导电性的氧化物层来保护金属层。

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