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1. 发明授权

US07538333B1 Contactless charge measurement of product wafers and control of corona generation and deposition 失效
标题翻译：产品晶圆的非接触式电荷测量和电晕发生和沉积的控制
公开(公告)号：US07538333B1
公开(公告)日：2009-05-26
申请号：US11460517
申请日：2006-07-27
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： H01J37/30 , H01J37/317 , G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译：提供了用于确定样品性质的系统和方法。样品可以是产品晶片。该方法可以包括将聚焦斑点偏置在样本上。该方法还可以包括测量样品上的测量点的参数。测量点可能与聚焦点重叠。此外，该方法可以包括根据测量的参数确定样品的性质。还提供了用于改变电晕源的性能的系统和方法。该方法可以包括改变电晕源内的环境的属性。该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

2. 发明授权

US07248062B1 Contactless charge measurement of product wafers and control of corona generation and deposition 有权
标题翻译：产品晶圆的非接触式电荷测量和电晕发生和沉积的控制
公开(公告)号：US07248062B1
公开(公告)日：2007-07-24
申请号：US10701112
申请日：2003-11-04
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译：提供了用于确定样品性质的系统和方法。样品可以是产品晶片。该方法可以包括将聚焦斑点偏置在样本上。该方法还可以包括测量样品上的测量点的参数。测量点可能与聚焦点重叠。此外，该方法可以包括根据测量的参数确定样品的性质。还提供了用于改变电晕源的性能的系统和方法。该方法可以包括改变电晕源内的环境的属性。该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

3. 发明授权

US07719294B1 Systems configured to perform a non-contact method for determining a property of a specimen 有权
标题翻译：被配置为执行用于确定样本的属性的非接触方法的系统
公开(公告)号：US07719294B1
公开(公告)日：2010-05-18
申请号：US11460505
申请日：2006-07-27
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems configured to perform a non-contact method for determining a property of a specimen are provided. One system configured to perform a non-contact method for determining a property of a specimen includes a focused biasing device configured to provide a stimulus to a focused spot on the specimen. The system also includes a sensor configured to measure a parameter of a measurement spot on the specimen. The measurement spot overlaps the focused spot. The system further includes a processor configured to determine the property of the specimen from the parameter.
摘要翻译：提供被配置为执行用于确定样本的属性的非接触方法的系统。被配置为执行用于确定样本的属性的非接触方法的一个系统包括被配置为向所述样本上的聚焦点提供刺激的聚焦偏置装置。该系统还包括被配置为测量样品上的测量点的参数的传感器。测量点与聚焦点重叠。该系统还包括处理器，该处理器被配置为根据该参数确定样本的属性。

4. 发明授权

US07358748B1 Methods and systems for determining a property of an insulating film 有权
标题翻译：用于确定绝缘膜性能的方法和系统
公开(公告)号：US07358748B1
公开(公告)日：2008-04-15
申请号：US11291075
申请日：2005-11-30
申请人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
发明人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
IPC分类号： G01R27/08 , G01R27/26 , G01R31/302 , G01N27/60
CPC分类号： H01L22/12 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.
摘要翻译：提供一种用于确定绝缘膜的性质的方法。该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。提供一种确定绝缘膜厚度的方法。该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。该方法还可以包括使用电压衰减速率和与电流泄漏和膜厚度有关的理论模型来确定膜的厚度。

5. 发明授权

US07012438B1 Methods and systems for determining a property of an insulating film 失效
标题翻译：用于确定绝缘膜性能的方法和系统
公开(公告)号：US07012438B1
公开(公告)日：2006-03-14
申请号：US10616086
申请日：2003-07-09
申请人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
发明人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
IPC分类号： G01R27/08 , G01R27/26 , G01N27/60
CPC分类号： H01L22/12 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.
摘要翻译：提供一种用于确定绝缘膜的性质的方法。该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。提供一种确定绝缘膜厚度的方法。该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。该方法还可以包括使用电压衰减速率和与泄漏和膜厚度有关的理论模型来确定膜的厚度。

6. 发明授权

US07064565B1 Methods and systems for determining an electrical property of an insulating film 失效
标题翻译：用于确定绝缘膜的电性能的方法和系统
公开(公告)号：US07064565B1
公开(公告)日：2006-06-20
申请号：US10699352
申请日：2003-10-31
申请人： Zhiwei Xu , Thomas G. Miller , Jianou Shi , Gregory S. Horner
发明人： Zhiwei Xu , Thomas G. Miller , Jianou Shi , Gregory S. Horner
IPC分类号： G01R31/302 , G01R31/26
CPC分类号： G01R31/129 , G01R31/2831
摘要： Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.
摘要翻译：提供了确定绝缘膜的表面电压的方法。一种方法包括在绝缘膜的上表面上沉积电荷并在沉积期间测量到晶片的电流。该方法还包括从电流确定绝缘膜的表面电压。以这种方式，不测量表面电压，而是根据测量的电流确定。另一个实施例可以包括在电荷的高电流模式沉积期间测量到晶片的第二电流，并从第二电流确定膜的第二表面电压。可以重复该方法直到测量Q-V扫描。附加实施例可以包括在沉积电荷期间改变控制电压，使得到晶片的电流随时间基本上是恒定的，并且确定绝缘膜的电荷对电压数据。

7. 发明授权

US06759255B2 Method and system for detecting metal contamination on a semiconductor wafer 失效
标题翻译：用于检测半导体晶片上的金属污染的方法和系统
公开(公告)号：US06759255B2
公开(公告)日：2004-07-06
申请号：US09854177
申请日：2001-05-10
申请人： Zhiwei Xu , Arun Srivatsa , Amin Samsavar , Thomas G Miller , Greg Horner , Steven Weinzierl
发明人： Zhiwei Xu , Arun Srivatsa , Amin Samsavar , Thomas G Miller , Greg Horner , Steven Weinzierl
IPC分类号： H01I2166
CPC分类号： G01N27/60 , G01N27/002 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography. A system configured to detect metal contamination on a semiconductor topography is also provided. An oven may be incorporated into the system and may be used to anneal the semiconductor topography. The system may also include a device that may be configured to deposit a charge on an upper surface of the semiconductor topography. A sensor may also be included in the system. The sensor may use a non-contact work function technique to measure an electrical property of the semiconductor topography.
摘要翻译：提供了一种在半导体形貌上检测金属污染的方法。半导体形貌可以包括设置在半导体衬底上的半导体衬底或电介质材料。金属污染物可以通过退火工艺被驱入半导体衬底。或者，退火过程可以将金属污染物驱动到电介质材料中。在退火处理之后，可以在半导体形貌的上表面上沉积电荷。可以测量半导体形貌的电性质。至少一种类型的金属污染的特征可以被确定为半导体形貌的电性能的函数。该方法可以用于确定半导体形貌的一部分或整个半导体形貌上的一种或多种类型的金属污染的特性。还提供了一种用于检测半导体形貌上的金属污染的系统。烘箱可以并入系统中，并且可以用于退火半导体形貌。该系统还可以包括可被配置为在半导体形貌的上表面上沉积电荷的装置。传感器也可以包括在系统中。传感器可以使用非接触功函数技术来测量半导体形貌的电性质。

8. 发明申请

US20070126458A1 METHODS AND SYSTEMS FOR DETERMINING ONE OR MORE PROPERTIES OF A SPECIMEN 审中-公开
标题翻译：用于确定样本的一个或多个属性的方法和系统
公开(公告)号：US20070126458A1
公开(公告)日：2007-06-07
申请号：US11669209
申请日：2007-01-31
申请人： Jianou Shi , Jeffrey Rzepiela , Shiyou Pei , Zhiwei Xu , John Alexander
发明人： Jianou Shi , Jeffrey Rzepiela , Shiyou Pei , Zhiwei Xu , John Alexander
IPC分类号： G01R31/26
CPC分类号： G01R31/311 , G01R31/2648
摘要： Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.
摘要翻译：提供了用于确定样本的一个或多个属性的各种方法和系统。用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。不同波长的光以基本上相同的频率被调制。该系统还被配置为对样本进行至少两次测量。样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。该系统还被配置为测量在多个位置处的探针的振动。可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

9. 发明授权

US07187186B2 Methods and systems for determining one or more properties of a specimen 有权
标题翻译：用于确定样品的一个或多个性质的方法和系统
公开(公告)号：US07187186B2
公开(公告)日：2007-03-06
申请号：US11078669
申请日：2005-03-10
申请人： Jianou Shi , Jeffrey Rzepiela , Shiyou Pei , Zhiwei Xu , John Alexander
发明人： Jianou Shi , Jeffrey Rzepiela , Shiyou Pei , Zhiwei Xu , John Alexander
IPC分类号： G01R31/302
CPC分类号： G01R31/311 , G01R31/2648
摘要： Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.
摘要翻译：提供了用于确定样本的一个或多个属性的各种方法和系统。用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。不同波长的光以基本上相同的频率被调制。该系统还被配置为对样本进行至少两次测量。样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。该系统还被配置为测量在多个位置处的探针的振动。可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

10. 发明申请

US20050206402A1 Methods and systems for determining one or more properties of a specimen 有权
标题翻译：用于确定样品的一个或多个性质的方法和系统
公开(公告)号：US20050206402A1
公开(公告)日：2005-09-22
申请号：US11078669
申请日：2005-03-10
申请人： Jianou Shi , Jeffrey Rzepiela , Shiyou Pei , Zhiwei Xu , John Alexander
发明人： Jianou Shi , Jeffrey Rzepiela , Shiyou Pei , Zhiwei Xu , John Alexander
IPC分类号： H01L21/66 , G01R31/26 , G01R31/311
CPC分类号： G01R31/311 , G01R31/2648
摘要： Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.
摘要翻译：提供了用于确定样本的一个或多个属性的各种方法和系统。用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。不同波长的光以基本上相同的频率被调制。该系统还被配置为对样本进行至少两次测量。样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。该系统还被配置为测量在多个位置处的探针的振动。可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

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