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1. 发明授权

US5310707A Substrate material for the preparation of oxide superconductors 失效
标题翻译：用于制备氧化物超导体的基板材料
公开(公告)号：US5310707A
公开(公告)日：1994-05-10
申请号：US952212
申请日：1992-09-28
申请人： Akira Oishi , Toshio Usui , Hidekazu Teshima , Tadataka Morishita
发明人： Akira Oishi , Toshio Usui , Hidekazu Teshima , Tadataka Morishita
IPC分类号： H01L39/24 , C04B35/50
CPC分类号： H01L39/2458
摘要： A substrate material for the preparation of an oxide superconductor includes two different rare earth elements A' and A" in the IIIa group, Ga, and 0, the atomic ratio of these elements being expressed as A'1-xA"xGaO.sub.3 (where 0
摘要翻译：用于制备氧化物超导体的衬底材料包括IIIa族中的两种不同的稀土元素A'和A“，Ga和O，这些元素的原子比表示为A'1-xA”xGaO3（其中0

2. 发明授权

US5369275A Apparatus for solid surface analysis using X-ray spectroscopy 失效
标题翻译：使用X射线光谱法进行固体表面分析的装置
公开(公告)号：US5369275A
公开(公告)日：1994-11-29
申请号：US911740
申请日：1992-07-10
申请人： Toshio Usui , Yuji Aoki , Masayuki Kamei , Tadataka Morishita
发明人： Toshio Usui , Yuji Aoki , Masayuki Kamei , Tadataka Morishita
IPC分类号： G01N23/22 , G01N23/225 , G01Q30/02 , G01Q30/16 , H01J37/26
CPC分类号： G01N23/2252 , G01N23/2206 , G01N23/2208
摘要： An apparatus for solid surface analysis capable of carrying out the X-ray fluorescence analysis of the sample surface according to the characteristic X-rays detected by the energy dispersive X-ray detector. The apparatus can also obtain an enlarged image of the sample surface according to the secondary electrons emitted from the excited sample surface detected by the electron detector. The apparatus can also carry out an X-ray diffraction analysis of the sample surface according to diffracted X-rays detected by the diffracted X-ray detector. The apparatus is also capable of attaching or detaching the energy dispersive X-ray detector easily by incorporating a connection room which can be put in a vacuum state independent of the vacuum chamber.
摘要翻译：一种用于固体表面分析的装置，其能够根据由能量色散X射线检测器检测的特征X射线进行样品表面的X射线荧光分析。该装置还可以根据由电子检测器检测到的被激发的样品表面发射的二次电子获得样品表面的放大图像。该装置还可以根据衍射X射线检测器检测的衍射X射线进行样品表面的X射线衍射分析。该装置还能够通过结合可以独立于真空室的真空状态的连接室容易地附接或分离能量色散X射线检测器。

3. 发明授权

US5420103A A-axis superconductor on a yttrium oxide film 失效
标题翻译： A轴超导体在氧化钇膜上
公开(公告)号：US5420103A
公开(公告)日：1995-05-30
申请号：US108772
申请日：1993-08-19
申请人： Akira Oishi , Tadataka Morishita
发明人： Akira Oishi , Tadataka Morishita
IPC分类号： C01G3/00 , C01G1/00 , C30B11/00 , C30B23/02 , C30B25/02 , C30B29/22 , H01L39/24 , B32B9/00
CPC分类号： H01L39/2458 , C30B11/00 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/22 , C30B29/225 , Y10S428/93 , Y10S505/701
摘要： A LnBaCuO-series superconducting thin film is provided over a surface of a substrate of Y.sub.2 O.sub.3 single crystal to form a composite superconductor. Ln stands for Y or a lanthanoid element. The composite superconductor has an improved interfacial diffusion.
摘要翻译：在Y2O3单晶的衬底的表面上提供LnBaCuO系超导薄膜以形成复合超导体。 Ln代表Y或镧系元素。复合超导体具有改善的界面扩散。

4. 发明授权

US6163713A High frequency transmission line capable of improving an intermodulation distortion characteristic in a high frequency device 失效
标题翻译：高频传输线能够改善高频装置中的互调失真特性
公开(公告)号：US6163713A
公开(公告)日：2000-12-19
申请号：US35366
申请日：1998-03-05
申请人： Katsumi Suzuki , Sadahiko Miura , Takayuki Inoue , Koji Muranaka , Hideaki Zama , Youichi Enomoto , Tadataka Morishita , Shoji Tanaka
发明人： Katsumi Suzuki , Sadahiko Miura , Takayuki Inoue , Koji Muranaka , Hideaki Zama , Youichi Enomoto , Tadataka Morishita , Shoji Tanaka
IPC分类号： H01L39/14 , H01L39/24 , H01P3/08 , H01B12/02
CPC分类号： H01P3/081 , H01L39/143 , H01L39/2422 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a high frequency transmission line having a dielectric substrate and a conductor line which is provided on the dielectric substrate for allowing electric current to flow therethrough, the conductor line has a non-grain-boundary oxide superconductor layer with twin walls but without grain boundaries. The high frequency transmission line is in the form of a plane circuit. It is preferable that an oriented oxide superconductor layer is provided between the dielectric substrate and the non-grain-boundary oxide superconductor layer.
摘要翻译：在具有电介质基板和导电线的高频传输线路中，该导体线设置在电介质基板上，用于允许电流流过其中，导体线具有双层壁但不具有晶界的非晶界氧化物超导体层。高频传输线是平面电路的形式。优选在电介质基板和非晶界氧化物超导体层之间设置取向氧化物超导体层。

5. 发明授权

US5421890A Apparatus for producing oxide thin film 失效
标题翻译：氧化物薄膜的制造装置
公开(公告)号：US5421890A
公开(公告)日：1995-06-06
申请号：US98903
申请日：1993-07-29
申请人： Ryusuke Kita , Takashi Hase , Masato Sasaki , Tadataka Morishita
发明人： Ryusuke Kita , Takashi Hase , Masato Sasaki , Tadataka Morishita
IPC分类号： C23C8/12 , C04B41/50 , C04B41/85 , C04B41/87 , C23C8/16 , C23C14/08 , C23C14/24 , C23C14/58 , C30B23/02 , C23C16/40
CPC分类号： C04B41/009 , C04B41/5027 , C04B41/5072 , C04B41/85 , C04B41/87 , C23C14/08 , C23C14/24 , C30B23/002 , C30B23/02 , C30B29/16 , C30B29/22
摘要： Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.
摘要翻译：公开了一种用于在正确控制氧化物薄膜的组成的同时以高生产率制造具有优异的结晶度和纯度的氧化物薄膜的氧化物薄膜制造方法和装置。在将真空室内的压力降低到1×10 -9 Torr或更小之后，通过蒸发特定的金属元素并将金属元素的蒸气沉积在真空室中的基底上来形成金属薄膜。然后，盖构件向上移动以紧密地邻接到盖接收构件，从而形成用于将基底气密地封闭在真空室中的气密室。随着保持气密室周围的真空度，通过气体管道将O2气体直接引入气密室，以氧化金属薄膜，从而形成氧化物薄膜。同时，气密室内的气体通过气体管道直接排出真空室外。

6. 发明授权

US5650376A (Nd, Ba).sub.3 Cu.sub.3 O.sub.7-d superconductor film 失效
标题翻译：（Nd，Ba）3Cu3O7-d超导体膜
公开(公告)号：US5650376A
公开(公告)日：1997-07-22
申请号：US554585
申请日：1995-11-06
申请人： Massoud Badaye , Tadataka Morishita , Youichi Enomoto , Shoji Tanaka
发明人： Massoud Badaye , Tadataka Morishita , Youichi Enomoto , Shoji Tanaka
IPC分类号： C01G1/00 , C01G3/00 , C01G3/02 , C23C14/08 , C30B23/08 , C30B29/22 , H01L39/02 , H01L39/12 , H01L39/24 , B32B9/00
CPC分类号： H01L39/126 , Y10S428/93 , Y10S505/701
摘要： A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.
摘要翻译：公开了具有以下组成的超导膜：（Nd，Ba）3Cu 3 O 7 - 其中d是大于0但小于0.5的数。超导薄膜具有与YBa2Cu3O7相同的晶体结构，不同之处在于部分Nd位置和/或部分Ba位置被Ba和Nd原子所占据。

7. 发明授权

US5635716A Method for identifying surface atoms of solid sample and apparatus therefor 失效
标题翻译：确定固体样品表面原子的方法及其设备
公开(公告)号：US5635716A
公开(公告)日：1997-06-03
申请号：US614678
申请日：1996-03-13
申请人： Ziyuan Liu , Tadataka Morishita
发明人： Ziyuan Liu , Tadataka Morishita
IPC分类号： G01N23/20 , G01N23/225 , H01J37/252 , H01J37/26
CPC分类号： G01N23/2251 , H01J37/252 , H01J2237/255 , H01J2237/2561
摘要： The atoms constituting a surface of a solid sample are identified by first forming, on the surface, island-like deposits of a substance capable of generating fluorescent X-rays upon being energized by an electron beam. The deposits are then energized with the electron beam so that fluorescent X-rays are emitted therefrom and reflected on the surface. From the critical angle for total reflection of the fluorescent X-rays reflected on that portion of the surface of the sample on which no deposits are present, the atoms constituting the surface may be determined. An apparatus for carrying out the above method is also disclosed which is a modification of the conventional RHEED/TRAXS device.
摘要翻译：通过首先在表面上形成能够通过电子束激发能够产生荧光X射线的物质的岛状沉积物来识别构成固体样品表面的原子。然后用电子束使沉积物通电，使得荧光X射线从其发射并在表面上反射。从在没有沉积物的样品表面部分上反射的荧光X射线的全反射的临界角度，可以确定构成表面的原子。还公开了用于执行上述方法的装置，其是常规RHEED / TRAXS装置的修改。

8. 发明授权

US5254363A Method for producing oxide films 失效
标题翻译：氧化膜生产方法
公开(公告)号：US5254363A
公开(公告)日：1993-10-19
申请号：US911492
申请日：1992-07-10
申请人： Ryusuke Kita , Takashi Hase , Masato Sasaki , Tadataka Morishita
发明人： Ryusuke Kita , Takashi Hase , Masato Sasaki , Tadataka Morishita
IPC分类号： C23C8/12 , C04B41/50 , C04B41/85 , C04B41/87 , C23C8/16 , C23C14/08 , C23C14/24 , C23C14/58 , C30B23/02 , B05D5/12 , B05D3/02
CPC分类号： C04B41/009 , C04B41/5027 , C04B41/5072 , C04B41/85 , C04B41/87 , C23C14/08 , C23C14/24 , C30B23/002 , C30B23/02 , C30B29/16 , C30B29/22
摘要： Disclosed is an oxide thin film producing method for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

9. 发明授权

US5837053A Process for preparing single crystal material and composite material for forming such single crystal material 失效
标题翻译：制备单晶材料的方法和用于形成这种单晶材料的复合材料
公开(公告)号：US5837053A
公开(公告)日：1998-11-17
申请号：US563383
申请日：1995-11-28
申请人： Furen Wang , Tadataka Morishita
发明人： Furen Wang , Tadataka Morishita
IPC分类号： C30B1/02 , C30B29/22 , H01L21/205
CPC分类号： C30B1/02 , C30B29/32
摘要： A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.
摘要翻译：通过在具有与非晶物质相同的化学组成的单晶的衬底的表面上形成无定形物质层来制备单晶材料，将所得的复合材料加热以将非晶层外延生长成为单晶层。还公开了一种用于制造这种单晶材料的复合材料，其包括单晶衬底和与衬底具有相同化学组成的无定形物质层，该层具有如下层的厚度：整体可以外延生长以制成单晶层。

10. 发明授权

US5747427A Process for forming a semiconductive thin film containing a junction 失效
标题翻译：用于形成含有结的半导体薄膜的工艺
公开(公告)号：US5747427A
公开(公告)日：1998-05-05
申请号：US638286
申请日：1996-04-26
申请人： Norio Homma , Tadataka Morishita
发明人： Norio Homma , Tadataka Morishita
IPC分类号： H01L39/22 , H01L39/24 , C23C14/34
CPC分类号： H01L39/225 , H01L39/2496
摘要： Disclosed is a method of forming a thin junction film including a first thin oxide flilm presenting a superconductivity and second thin oxide film presenting an insulator properties or possibly semiconductive properties with an improved production efficiency as well as improved film quality and characteristics. Employed are first and second targets each having substantially the same chemical composition excepting oxygen content. The first target is sputtered at a target cathode voltage of minus 100 V by the use of voltage derived from an external D.C. voltage source, thereby forming a first thin oxide film. Subsequently, the target is changed over to the second target while changing the target cathode voltage into self-bias voltage of minus 50 V without any change of the other film formation conditions. Through this change-over, the sputtering of the first target is successively followed by the sputtering of the second target without any interruption of time, to consequently form the second thin oxide film onto the first thin oxide film.
摘要翻译：公开了一种形成薄接合膜的方法，该薄接合膜包括具有超导性的第一薄氧化物薄膜和具有提高的生产效率以及改进的薄膜质量和特性的具有绝缘体性质或可能的半导体性质的第二薄氧化物薄膜。使用的是除了氧含量之外具有基本上相同的化学组成的第一和第二靶。通过使用从外部直流电压源得到的电压，将第一靶溅射在负100V的目标阴极电压，从而形成第一薄氧化膜。随后，在将目标阴极电压改变为负50V的自偏压的同时将目标切换到第二目标，而不会改变其它成膜条件。通过这种转换，第一靶的溅射依次是第二靶的溅射而不时间的中断，从而在第一薄氧化膜上形成第二薄氧化膜。

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