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1. 发明申请

US20110049659A1 MAGNETIZATION CONTROL METHOD, INFORMATION STORAGE METHOD, INFORMATION STORAGE ELEMENT, AND MAGNETIC FUNCTION ELEMENT 审中-公开
标题翻译：磁化控制方法，信息存储方法，信息存储元件和磁功能元件
公开(公告)号：US20110049659A1
公开(公告)日：2011-03-03
申请号：US12990524
申请日：2009-02-27
申请人： Yoshishige Suzuki , Takayuki Nozaki , Takuto Maruyama , Yoichi Shiota
发明人： Yoshishige Suzuki , Takayuki Nozaki , Takuto Maruyama , Yoichi Shiota
IPC分类号： H01L43/06 , H01F13/00
CPC分类号： H01F10/3286 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F41/302 , H01F41/307 , H01L43/08
摘要： The present invention provides a magnetization control method controlling, utilizing no current-induced magnetic field or spin transfer torque a magnetization direction with low power consumption, an information storage method, an information storage element, and a magnetic function element. The magnetization control method involves controlling a magnetization direction of a magnetic layer, and includes: forming a structure including (i) the magnetic layer which is an ultrathin film ferromagnetic layer having a film thickness of one or more atomic layers and of 2 nm or less, and (ii) an insulating layer provided on the ultrathin film ferromagnetic layer and working as a potential barrier; and controlling a magnetization direction of the ultrathin film ferromagnetic layer by applying either (i) a voltage to opposing electrodes sandwiching the structure and a base layer or (ii) an electric field to the structure to change magnetic anisotropy of the ultrathin film ferromagnetic layer. The magnetization control method further involves controlling a waveform of the applied voltage or the applied electric field to switch the magnetization direction.
摘要翻译：本发明提供一种控制利用低功耗的磁化方向的电流感应磁场或自旋转移转矩的磁化控制方法，信息存储方法，信息存储元件和磁功能元件。磁化控制方法包括控制磁性层的磁化方向，并且包括：形成包括（i）具有一个或多个原子层的膜厚度和2nm以下的膜的超薄膜铁磁性层的磁性层的结构，和（ii）设置在超薄膜铁磁层上并用作势垒的绝缘层; 并且通过对（i）将夹在该结构和基底层的相对电极施加电压，或（ii）向该结构施加电场以改变该超薄膜铁磁层的磁各向异性来控制该超薄膜铁磁层的磁化方向。磁化控制方法还包括控制所施加的电压或所施加的电场的波形以切换磁化方向。

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