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1. 发明授权

US06693671B1 Fast-dump structure for full-frame image sensors with lod antiblooming structures 有权
标题翻译：快速转储结构用于具有防雷结构的全帧图像传感器
公开(公告)号：US06693671B1
公开(公告)日：2004-02-17
申请号：US09533051
申请日：2000-03-22
申请人： Eric G. Stevens , William F. Desjardin
发明人： Eric G. Stevens , William F. Desjardin
IPC分类号： H04N5335
CPC分类号： H01L29/76816 , H01L27/14812 , H01L27/1485 , H01L27/14887
摘要： A structure for a fast-dump gate for charge coupled devices that does not require a separate contact to a drain region instead using the existing drain of a lateral overflow drain (LOD) typically used for antiblooming purposes. LOD structures are typically used on full-frame CCD image sensors. By using the LOD as the drain for a fast-dump gate, a separate opening in the gate electrode for the drain contact is avoided, thereby making the structure more compact. Gate control is provided by etching a hole in the CCD gate electrode over the overflow channel region of the LOD structure, and overlaying this with one of the subsequent gate electrode layers. This subsequent gate electrode is then used to control the fast-dump operation. Timing is shown for a two-phase CCD being operated with accumulation-mode clocking. Other types of CCDs and clocking schemes may be used. Another advantage of this structure is that it does not require any additional masking or processing steps when built, using a double electrode CCD process that employs a typical LOD structure.
摘要翻译：用于电荷耦合器件的快速转储栅极的结构，其不需要使用通常用于防护目的的侧向溢流漏极（LOD）的现有漏极而不需要与漏极区分离接触。 LOD结构通常用于全帧CCD图像传感器。通过使用LOD作为快速转储栅极的漏极，避免了用于漏极接触的栅电极中的单独的开口，从而使结构更紧凑。栅极控制是通过在LOD结构的溢流沟道区域上蚀刻CCD栅电极中的一个孔，并将其与随后的栅电极层之一重叠来提供的。然后，随后的栅电极用于控制快速转储操作。显示了使用累加模式时钟运行的两相CCD的时序。可以使用其他类型的CCD和时钟方案。这种结构的另一个优点是当使用采用典型的LOD结构的双电极CCD工艺时，它不需要任何额外的掩蔽或处理步骤。

2. 发明授权

US5448089A Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range 失效
标题翻译：电荷耦合器件在宽温度范围内具有改善的电荷转移效率
公开(公告)号：US5448089A
公开(公告)日：1995-09-05
申请号：US219758
申请日：1994-03-29
申请人： Edmund K. Banghart , Edward T. Nelson , William F. DesJardin , James P. Lavine , Bruce C. Burkey
发明人： Edmund K. Banghart , Edward T. Nelson , William F. DesJardin , James P. Lavine , Bruce C. Burkey
IPC分类号： H01L29/762 , H01L21/339 , H01L27/148 , H01L29/10 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L29/1062 , H01L27/14831
摘要： A charge-coupled device having an improved charge-transfer efficiency over a broad temperature range. The device comprises a substrate of semiconductor material of one conductivity type; a first buried channel formed in the substrate and of a conductivity type opposite to that of the substrate; a second buried channel of a conductivity type opposite to that of the substrate formed in the same region of the substrate as the first buried channel and having a greater depth of penetration into the substrate than the first buried channel; compensated regions formed at intervals in the buried channels providing a means for containing individual packets of charge and shaped for inducing a narrow channel effect and for producing a fringing electric field in a direction of charge transfer in uncompensated buried channel regions; electrode gates associated with each pair of adjoining compensated and uncompensated regions in the device; and means for clocking the electrodes for causing a string of charge packets to be transferred through the device.
摘要翻译：一种电荷耦合器件，其在宽温度范围内具有改善的电荷转移效率。该器件包括一种导电类型的半导体材料的衬底; 形成在所述基板中并且与所述基板相反的导电类型的第一埋入通道; 导电类型的第二掩埋沟道，其形成在与所述第一掩埋沟道相同的衬底区域中，并且比所述第一掩埋沟道具有比所述衬底更大的穿透深度; 在掩埋沟道中间隔地形成的补偿区域提供了一种用于容纳单独的电荷包并且被成形为用于诱导窄通道效应并用于在未补偿的掩埋沟道区域中的电荷转移方向上产生边缘电场的装置; 与设备中的每对相邻补偿和未补偿区域相关联的电极门; 以及用于使电极计时以使一串电荷包通过该装置传送的装置。

3. 发明授权

US5349234A Package and method for assembly of infra-red imaging devices 失效
标题翻译：用于组装红外成像装置的封装和方法
公开(公告)号：US5349234A
公开(公告)日：1994-09-20
申请号：US890451
申请日：1992-05-29
申请人： William F. DesJardin , Edward J. Ozimek , Luis A. Rivera , Terry Tarn
发明人： William F. DesJardin , Edward J. Ozimek , Luis A. Rivera , Terry Tarn
IPC分类号： H01L31/02 , H01L31/0203 , H01L31/024 , H01L23/02 , H01L21/44
CPC分类号： H01L31/0203 , H01L31/024 , H01L2224/48091 , H01L2224/4824
摘要： Apparatus and a method for the packaging of semiconductor chips to simplify assembly while improving thermal dissipation from the chip and reducing stress in the chip due to differential thermal expansion between the chip and its package as they are cycled over a temperature range are disclosed. An adhesive tape covers an active area of the chip and leaving bonding pads on the chip exposed through a recess in the adhesive tape. A body with a similar recess supports the other side of the tape. Wire bonds are made in the recess to connect bonding pads on the body to the chip. A lid covers the recess to protect the wire bonds.
摘要翻译：公开了用于封装半导体芯片以简化组装的装置和方法，同时改善了芯片的热耗散，并且由于芯片与封装之间在温度范围内循环时的热膨胀差异导致芯片中的应力降低。粘合带覆盖芯片的有效区域，并且通过胶带中的凹部露出芯片上的接合焊盘。具有相似凹槽的主体支撑磁带的另一面。在凹部中形成引线键，以将本体上的接合焊盘连接到芯片。盖子覆盖凹槽以保护引线接合。

4. 发明授权

US07304676B2 Timing generator for electronic image sensor with tables that control line and frame timing 有权
标题翻译：具有控制线和帧时序的表的电子图像传感器的定时发生器
公开(公告)号：US07304676B2
公开(公告)日：2007-12-04
申请号：US10635332
申请日：2003-08-06
申请人： John T. Compton , David M. Charneski , Wayne W. Hintz , Edward P. Lawler , William F. DesJardin , Richard B. Brolly , Herbert J. Erhardt
发明人： John T. Compton , David M. Charneski , Wayne W. Hintz , Edward P. Lawler , William F. DesJardin , Richard B. Brolly , Herbert J. Erhardt
IPC分类号： H04N5/335
CPC分类号： H04N5/335
摘要： A timing generator for an electronic image sensor includes one or more memory based tables for controlling timing events that occur within one or more different types of image sensor lines, and one or more memory based tables for controlling timing events that occur within one or more different types of image sensor frames.
摘要翻译：电子图像传感器的定时发生器包括用于控制在一个或多个不同类型的图像传感器线路内发生的定时事件的一个或多个基于存储器的表，以及一个或多个基于存储器的表，用于控制在一个或多个不同类型图像传感器帧类型。

5. 发明授权

US07402882B2 Methods to eliminate amplifier glowing artifact in digital images captured by an image sensor 有权
标题翻译：消除由图像传感器捕获的数字图像中放大器发光伪像的方法
公开(公告)号：US07402882B2
公开(公告)日：2008-07-22
申请号：US10924061
申请日：2004-08-23
申请人： Shen Wang , William F. DesJardin , Robert P. Fabinski , David N. Nichols , Christopher Parks , Eric G. Stevens
发明人： Shen Wang , William F. DesJardin , Robert P. Fabinski , David N. Nichols , Christopher Parks , Eric G. Stevens
IPC分类号： H01L29/72
CPC分类号： H01L27/14601 , H01L27/14623 , H01L27/14806
摘要： A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferring charge in a second direction from the plurality of the image pixels for further processing; an amplifier structure disposed in the substrate that receives the charge from the transfer mechanism and converts the charge into a voltage signal; a first opaque layer spanning over the amplifier for blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied; and a second opaque layer deposited into the substrate for also blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied.
摘要翻译：电荷耦合器件包括衬底; 在基板中以二维阵列布置的多个图像像素，用于捕获图像的电子表示并用于沿第一方向传送电荷; 用于从多个图像像素沿第二方向传送电荷以用于进一步处理的传送机构; 放大器结构，设置在所述基板中，从所述传送机构接收所述电荷并将所述电荷转换为电压信号; 跨越放大器的第一不透明层，用于阻挡当施加电压时由放大器结构内的电场固有地产生的近红外光; 以及沉积到衬底中的第二不透明层，用于当施加电压时也阻挡由放大器结构内的电场固有地产生的近红外光。

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