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1. 发明授权

US06826517B2 Method and apparatus for simulating manufacturing, electrical and physical characteristics of a semiconductor device 失效
标题翻译：用于模拟半导体器件的制造，电气和物理特性的方法和装置
公开(公告)号：US06826517B2
公开(公告)日：2004-11-30
申请号：US09747200
申请日：2000-12-21
申请人： Takako Okada
发明人： Takako Okada
IPC分类号： G06F1750
CPC分类号： G06F17/5018 , G06F2217/84 , H01L2924/0002 , H01L2924/00
摘要： An electronic device simulator includes a three-dimensional lumped device model, a three-dimensional visco-elastic process simulation model and a material design model that are interlinked with each other. The three-dimensional lumped device element model comprises a Poisson's equation model, an electron continuity equation model, a hole continuity equation model, a Maxwell's equations model, an eddy current equation model, and an Ohm's law equation model. The simulator accounts for the three dimensional characteristics of the circuit to determine circuit performance.
摘要翻译：电子设备模拟器包括彼此相互连接的三维集中装置模型，三维粘弹性过程模拟模型和材料设计模型。三维集总装置元件模型包括泊松方程模型，电子连续性方程模型，孔连续性方程模型，麦克斯韦方程模型，涡流方程模型和欧姆定律方程模型。模拟器考虑了电路的三维特性以确定电路性能。

2. 发明授权

US6093243A Semiconductor device and its fabricating method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US6093243A
公开(公告)日：2000-07-25
申请号：US959331
申请日：1997-10-28
申请人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
发明人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/28 , H01L21/329 , H01L21/334 , H01L21/336 , H01L21/822 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , C30B1/04
CPC分类号： H01L28/82 , H01L21/2022 , H01L21/28035 , H01L29/6609 , H01L29/66181 , H01L29/66613 , H01L29/66628 , H01L29/66651 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , H01L29/49 , H01L29/78654
摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.
摘要翻译：在低温下通过固相生长形成具有优异晶体质量并提供高可靠性半导体器件的单晶和多晶体。将非晶薄膜沉积在基板上，使得非晶薄膜的主要构成元素的平均原子间距离为单晶中元素的平均原子间距离的1.02倍或更多，并且施加结晶能到无定形薄膜进行固相生长，从而形成单晶。在本发明的另一实施例中，在基板或绝缘膜上形成非晶半导体薄膜，使得膜的主要构成元件的平均原子间距离分布基本上与原子间距离分布平均元素，并且对非晶半导体薄膜施加结晶能，引起固相生长，从而形成单晶半导体薄膜。

3. 发明授权

US6066872A Semiconductor device and its fabricating method 失效
公开(公告)号：US6066872A
公开(公告)日：2000-05-23
申请号：US959330
申请日：1997-10-28
申请人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
发明人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/28 , H01L21/329 , H01L21/334 , H01L21/336 , H01L21/822 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L31/119
CPC分类号： H01L28/82 , H01L21/2022 , H01L21/28035 , H01L29/6609 , H01L29/66181 , H01L29/66613 , H01L29/66628 , H01L29/66651 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , H01L29/49 , H01L29/78654
摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

4. 发明授权

US5514904A Semiconductor device with monocrystalline gate insulating film 失效
标题翻译：具有单晶栅极绝缘膜的半导体器件
公开(公告)号：US5514904A
公开(公告)日：1996-05-07
申请号：US297114
申请日：1994-08-26
申请人： Shinji Onga , Takako Okada , Kouichirou Inoue , Yoshiaki Matsushita , Kikuo Yamabe , Hiroaki Hazama , Haruo Okano
发明人： Shinji Onga , Takako Okada , Kouichirou Inoue , Yoshiaki Matsushita , Kikuo Yamabe , Hiroaki Hazama , Haruo Okano
IPC分类号： H01L21/8247 , H01L21/00 , H01L21/316 , H01L29/00 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/04 , H01L31/036
CPC分类号： H01L29/517
摘要： A semiconductor device includes a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on the surface of the monocrystalline silicon substrate, and a conductive film formed on the insulating film. The monocrystalline silicon substrate has a (100) plane orientation, the insulating film essentially consists of .beta.-cristobalite having a unit structure in a P4.sub.1 2.sub.1 2 structural expression in such a manner that every other silicon atoms of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of the .beta.-cristobalite and the 110! direction is set perpendicular to the (100) plane.
摘要翻译：半导体器件包括单晶硅衬底，由形成在单晶硅衬底的表面上的单晶氧化硅组成的绝缘膜和形成在绝缘膜上的导电膜。单晶硅衬底具有（100）面取向，绝缘膜基本上由具有P41212结构表达式的单元结构的β-方英石组成，使得围绕C轴排列的四个硅原子的每隔一个硅原子为布置在Si（100）平面上沿[110]方向排列的两个相邻的硅原子上，并且包括β-方英石的C轴和[110]方向的平面垂直于（100）平面。

5. 发明授权

US5879447A Semiconductor device and its fabricating method 失效
公开(公告)号：US5879447A
公开(公告)日：1999-03-09
申请号：US478765
申请日：1995-06-07
申请人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
发明人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/28 , H01L21/329 , H01L21/334 , H01L21/336 , H01L21/822 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , C30B19/00
CPC分类号： H01L28/82 , H01L21/2022 , H01L21/28035 , H01L29/6609 , H01L29/66181 , H01L29/66613 , H01L29/66628 , H01L29/66651 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , H01L29/49 , H01L29/78654
摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

6. 发明授权

US5582640A Semiconductor device and its fabricating method 失效
公开(公告)号：US5582640A
公开(公告)日：1996-12-10
申请号：US56443
申请日：1993-04-30
申请人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
发明人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/28 , H01L21/329 , H01L21/334 , H01L21/336 , H01L21/822 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L28/82 , H01L21/2022 , H01L21/28035 , H01L29/6609 , H01L29/66181 , H01L29/66613 , H01L29/66628 , H01L29/66651 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , H01L29/49 , H01L29/78654
摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

7. 发明授权

US06185472B2 Semiconductor device manufacturing method, manufacturing apparatus, simulation method and simulator 失效
标题翻译：半导体器件制造方法，制造装置，仿真方法和仿真器
公开(公告)号：US06185472B2
公开(公告)日：2001-02-06
申请号：US08777189
申请日：1996-12-27
申请人： Shinji Onga , Takako Okada , Hiroshi Tomita , Kikuo Yamabe , Haruo Okano
发明人： Shinji Onga , Takako Okada , Hiroshi Tomita , Kikuo Yamabe , Haruo Okano
IPC分类号： G06F1900
CPC分类号： H01L22/20 , G06F17/5018
摘要： A semiconductor device manufacturing method capable of proceeding semiconductor device manufacturing processes according to predetermined schedules or while correcting them without testpieces is provided. The method includes the steps of collecting actually observed data during at least one of plural steps, obtaining prediction data in at least one of plural steps by using an ab initio molecular dynamics process simulator or a molecular dynamics simulator, comparing and verifying the prediction data and the actually observed data sequentially at real time, and correcting and processing the plural manufacturing process factors sequentially at real time if a difference in significance is recognized between set values for the plural manufacturing process factors and the plural manufacturing process factors estimated from the actually observed data according to comparison and verification.
摘要翻译：提供一种能够根据预定时间表进行半导体器件制造工艺或在没有测试件的情况下对其进行校正的半导体器件制造方法。该方法包括以下步骤：在多个步骤中的至少一个步骤中收集实际观察到的数据，通过使用从头分子动力学过程模拟器或分子动力学模拟器获得多个步骤中的至少一个步骤中的预测数据，比较和验证预测数据和实际观察到的数据，并且如果在多个制造处理因子的设定值和从实际观测数据估计出的多个制造处理因子之间识别出显着性差异，则实时依次校正和处理多个制造工艺因素根据比较和验证。

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