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1. 发明申请

US20100176408A1 LIGHT-EMITTING DIODE WITH HIGH LIGHTING EFFICIENCY 有权
标题翻译：具有高照明效率的发光二极管
公开(公告)号：US20100176408A1
公开(公告)日：2010-07-15
申请号：US12421869
申请日：2009-04-10
申请人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/387 , H01L2933/0083
摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.
摘要翻译：本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得说每个层压结构。由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

2. 发明授权

US08507357B2 Method for lift-off of light-emitting diode substrate 有权
标题翻译：发光二极管基板剥离方法
公开(公告)号：US08507357B2
公开(公告)日：2013-08-13
申请号：US13352812
申请日：2012-01-18
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Kang-Wei Peng , Jiansen Zheng , Jyh-Chiarng Wu , Keehuang Lin
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Kang-Wei Peng , Jiansen Zheng , Jyh-Chiarng Wu , Keehuang Lin
IPC分类号： H01L21/0242
CPC分类号： H01L33/0079 , H01L21/0242 , H01L21/0243 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/007 , H01L33/20
摘要： The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.
摘要翻译：本发明公开了一种用于剥离LED基板的方法。通过蚀刻GaN外延层的侧壁，形成空腔结构，其可以与外延生长中的非完全填充的图案化蓝宝石衬底配合起作用，从而使GaN外延层与蓝宝石衬底分离。根据本发明的实施方案的方法可以有效地降低GaN基外延层的生长中的位错密度; 提高晶格质量，实现LED基板的快速剥离，具有成本低，对GaN薄膜无内部损坏，光电器件性能提高，发光效率高等优点。

3. 发明申请

US20120190148A1 METHOD FOR LIFT-OFF OF LIGHT-EMITTING DIODE SUBSTRATE 有权
标题翻译：发光二极管基板的释放方法
公开(公告)号：US20120190148A1
公开(公告)日：2012-07-26
申请号：US13352812
申请日：2012-01-18
申请人： SU-HUI LIN , SHENG-HSIEN HSU , KANG-WEI PENG , JIANSEN ZHENG , JYH-CHIARNG WU , KECHUANG LIN
发明人： SU-HUI LIN , SHENG-HSIEN HSU , KANG-WEI PENG , JIANSEN ZHENG , JYH-CHIARNG WU , KECHUANG LIN
IPC分类号： H01L33/32
CPC分类号： H01L33/0079 , H01L21/0242 , H01L21/0243 , H01L21/02488 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/007 , H01L33/20
摘要： The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.
摘要翻译：本发明公开了一种用于剥离LED基板的方法。通过蚀刻GaN外延层的侧壁，形成空腔结构，其可以与外延生长中的非完全填充的图案化蓝宝石衬底配合起作用，从而使GaN外延层与蓝宝石衬底分离。根据本发明的实施方案的方法可以有效地降低GaN基外延层的生长中的位错密度; 提高晶格质量，实现LED基板的快速剥离，具有成本低，对GaN薄膜无内部损坏，光电器件性能提高，发光效率高等优点。

4. 发明申请

US20110284895A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：发光半导体器件
公开(公告)号：US20110284895A1
公开(公告)日：2011-11-24
申请号：US13084782
申请日：2011-04-12
申请人： Sheng-Hsien Hsu
发明人： Sheng-Hsien Hsu
IPC分类号： H01L33/58
CPC分类号： H01L33/20 , H01L33/007 , H01L33/16
摘要： The present invention provides a light-emitting semiconductor device, which comprises a substrate having a surface formed with a plane and a plurality of protrusions out of the plane. The plane is on a crystalline orientation. The protrusion is provided with an outer surface consisting of a plurality of sidewall surfaces. The sidewall surfaces are substantially not on the crystalline orientation. The protrusion is formed with an outline edge extended from the bottom to the top of the protrusion from a side view. The outline edge comprises at least one turning point. A first conductive type semiconductor layer is above the surface of the substrate, an active layer is above the first conductive type semiconductor layer, and a second conductive type semiconductor layer is above the active layer.
摘要翻译：本发明提供了一种发光半导体器件，其包括具有形成有平面的表面和离开该平面的多个突起的基板。平面处于结晶方向。突起设置有由多个侧壁表面组成的外表面。侧壁表面基本上不在结晶取向上。突起形成有从侧面从突起的底部延伸到顶部的轮廓边缘。轮廓边缘包括至少一个转折点。第一导电型半导体层位于衬底的表面之上，有源层位于第一导电型半导体层的上方，第二导电型半导体层位于有源层之上。

5. 发明授权

US07804104B2 Light-emitting diode with high lighting efficiency 有权
标题翻译：发光二极管具有高照明效率
公开(公告)号：US07804104B2
公开(公告)日：2010-09-28
申请号：US12421869
申请日：2009-04-10
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L27/15
CPC分类号： H01L33/46 , H01L33/387 , H01L2933/0083
摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.
摘要翻译：本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得说每个层压结构。由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

6. 发明申请

US20100176419A1 LIGHT-EMITTING DIODE WITH HIGH LIGHTING EFFICIENCY 有权
标题翻译：具有高照明效率的发光二极管
公开(公告)号：US20100176419A1
公开(公告)日：2010-07-15
申请号：US12421872
申请日：2009-04-10
申请人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui LIN , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/42
摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.
摘要翻译：本发明公开了一种发光二极管。在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠层结构。依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。每个层压结构由具有各自折射率的多个透明绝缘层组成。另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆叠透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率，发光二极管。

7. 发明授权

US08247837B2 Light-emitting diode with high lighting efficiency 有权
标题翻译：发光二极管具有高照明效率
公开(公告)号：US08247837B2
公开(公告)日：2012-08-21
申请号：US12421872
申请日：2009-04-10
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/42
摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.
摘要翻译：本发明公开了一种发光二极管。在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠层结构。依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。每个层压结构由具有各自折射率的多个透明绝缘层组成。另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆积透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率，发光二极管。

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