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1. 发明授权

US4190851A Monolithic extrinsic silicon infrared detectors with charge coupled device readout 失效
标题翻译：具有电荷耦合器件读数的单片外在硅红外探测器
公开(公告)号：US4190851A
公开(公告)日：1980-02-26
申请号：US614277
申请日：1975-09-17
申请人： Ronald M. Finnila , Stephen C. Su
发明人： Ronald M. Finnila , Stephen C. Su
IPC分类号： H01L27/148 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14875
摘要： There is disclosed an all silicon monolithic focal plane array of infrared detectors for image detection. The structure comprises an epitaxial layer grown from an extrinsicly doped silicon substrate. The detectors are formed in and extend through the substrate the material of which is sensitive to specific wavelength infrared signals according to the dopant used in the substrate. The signal readout function is performed by a charge coupled device shift register constructed in the epitaxial layer by separating electrodes from it in an insulating layer formed on it. Carriers generated in the detecor by incident infrared radiation are directly injected into the CCD shift register and detected at the output end. The monolithic construction and the use of an epitaxial layer to form the CCD shift register results in low cost, high yield and high efficiency devices.
摘要翻译：公开了用于图像检测的全硅单片焦平面阵列红外探测器。该结构包括从外源掺杂的硅衬底生长的外延层。根据衬底中使用的掺杂剂，检测器形成并延伸通过衬底，其材料对特定波长的红外信号敏感。信号读出功能由在外延层中构成的电荷耦合器件移位寄存器通过在其上形成的绝缘层中从其分离电极来执行。通过入射红外辐射在探测器中产生的载体直接注入CCD移位寄存器，并在输出端检测。单片结构和使用外延层形成CCD移位寄存器导致低成本，高产量和高效率器件。

2. 发明授权

US5847784A Self adjusting tiled projector using test pattern and sensor 失效
标题翻译：使用测试图案和传感器自调平铺投影机
公开(公告)号：US5847784A
公开(公告)日：1998-12-08
申请号：US902022
申请日：1997-07-29
申请人： Ronald M. Finnila , Donald C. Mead
发明人： Ronald M. Finnila , Donald C. Mead
IPC分类号： H04N5/74 , H04N9/12 , H04N17/00 , H04N17/04 , G02F1/1333 , G02F1/1335 , H04N3/22 , H04N3/223
CPC分类号： H04N9/3147 , H04N17/045 , H04N9/12 , H04N9/3194
摘要： A self adjusting tiled image display system and method is provided. In operation, an image source having an array of tiled image displays projects a test image pattern. A positioning device is attached to a corresponding one of the image displays for positioning that image display. A sensor senses the test image pattern projected by the image displays and generates a sensor signal indicative of the sensed test image pattern. A processor compares the sensor signal to a proper alignment signal indicative of the image displays being properly aligned to generate a positioning signal. The processor applies the positioning signal to the positioning devices to position the image displays as a function of the positioning signal until the image displays are in the proper alignment.
摘要翻译：提供自调平铺图像显示系统和方法。在操作中，具有平铺图像显示器阵列的图像源投射测试图像图案。定位装置附着到相应的一个图像显示器，用于定位该图像显示。传感器感测由图像显示投影的测试图像图案，并且生成表示感测到的测试图像图案的传感器信号。处理器将传感器信号与指示图像显示正确对准的适当对准信号进行比较，以产生定位信号。处理器将定位信号施加到定位装置，以根据定位信号定位图像显示器，直到图像显示器正确对准。

3. 发明授权

US07938989B1 Composite structures for storing thermal energy 有权
标题翻译：用于储存热能的复合结构
公开(公告)号：US07938989B1
公开(公告)日：2011-05-10
申请号：US12589262
申请日：2009-10-20
申请人： Adam F. Gross , Ronald M. Finnila , Alan J. Jacobsen , Robert Cumberland , Sky L. Skeith
发明人： Adam F. Gross , Ronald M. Finnila , Alan J. Jacobsen , Robert Cumberland , Sky L. Skeith
IPC分类号： G02B1/12
CPC分类号： F28D20/023 , Y02E60/145
摘要： A composite structure for storing thermal energy. In one embodiment, an apparatus for storing thermal energy includes: a thermal storage material and a three-dimensional structure. The three-dimensional structure includes: a plurality of first truss elements defined by a plurality of first self-propagating polymer waveguides and extending along a first direction; a plurality of second truss elements defined by a plurality of second self-propagating polymer waveguides and extending along a second direction; and a plurality of third truss elements defined by a plurality of third self-propagating polymer waveguides and extending along a third direction. The first, second, and third truss elements interpenetrate each other at a plurality of nodes to form a continuous material. The first, second, and third truss elements define an open space. The thermal storage material occupies at least a portion of the open space, and the three-dimensional structure is self-supporting.
摘要翻译：一种用于储存热能的复合结构。在一个实施例中，用于存储热能的装置包括：热存储材料和三维结构。三维结构包括：由多个第一自传播聚合物波导限定并沿着第一方向延伸的多个第一桁架元件; 由多个第二自传播聚合物波导限定并沿着第二方向延伸的多个第二桁架元件; 以及由多个第三自传播聚合物波导限定并沿着第三方向延伸的多个第三桁架元件。第一，第二和第三桁架元件在多个节点处相互渗透以形成连续材料。第一，第二和第三桁架元件定义了一个开放空间。储热材料占据开放空间的至少一部分，并且三维结构是自支撑的。

4. 发明授权

US07653276B1 Composite structures for storing thermal energy 失效
标题翻译：用于储存热能的复合结构
公开(公告)号：US07653276B1
公开(公告)日：2010-01-26
申请号：US12075033
申请日：2008-03-06
申请人： Adam F. Gross , Ronald M. Finnila , Alan J. Jacobsen , Robert Cumberland , Sky L. Skeith
发明人： Adam F. Gross , Ronald M. Finnila , Alan J. Jacobsen , Robert Cumberland , Sky L. Skeith
IPC分类号： G02B6/26 , G02B6/255
CPC分类号： F28D20/023 , Y02E60/145
摘要： A composite structure for storing thermal energy. In one embodiment, an apparatus for storing thermal energy includes: a thermal storage material and a three-dimensional structure. The three-dimensional structure includes: a plurality of first truss elements defined by a plurality of first self-propagating polymer waveguides and extending along a first direction; a plurality of second truss elements defined by a plurality of second self-propagating polymer waveguides and extending along a second direction; and a plurality of third truss elements defined by a plurality of third self-propagating polymer waveguides and extending along a third direction. The first, second, and third truss elements interpenetrate each other at a plurality of nodes to form a continuous material. The first, second, and third truss elements define an open space. The thermal storage material occupies at least a portion of the open space, and the three-dimensional structure is self-supporting.
摘要翻译：一种用于储存热能的复合结构。在一个实施例中，用于存储热能的装置包括：热存储材料和三维结构。三维结构包括：由多个第一自传播聚合物波导限定并沿第一方向延伸的多个第一桁架元件; 由多个第二自传播聚合物波导限定并沿着第二方向延伸的多个第二桁架元件; 以及由多个第三自传播聚合物波导限定并沿着第三方向延伸的多个第三桁架元件。第一，第二和第三桁架元件在多个节点处相互渗透以形成连续材料。第一，第二和第三桁架元件定义了一个开放空间。储热材料占据开放空间的至少一部分，并且三维结构是自支撑的。

5. 发明授权

US4313127A Signal detection method for IR detector having charge readout structure 失效
标题翻译：具有电荷读出结构的IR检测器的信号检测方法
公开(公告)号：US4313127A
公开(公告)日：1982-01-26
申请号：US127678
申请日：1980-03-06
申请人： Stephen C. Su , Ronald M. Finnila
发明人： Stephen C. Su , Ronald M. Finnila
IPC分类号： H01L27/148 , H01L27/14
CPC分类号： H01L27/14875
摘要： A method and apparatus for improving the operation of infrared detectors of a type generally characterized by a semiconductive substrate of a first conductivity type which includes a detection region defined or bounded by a heavily doped backside electrode and buried layer of the first conductivity type. A charge coupled device (CCD) readout structure for transfers charge in an epitaxial layer of second conductivity type which overlies the substrate, and the detector further includes a heavily doped layer of the second conductivity type positioned between the epitaxial layer and the substrate to shield the charge carriers of the substrate from the CCD voltages. Means are provided by the present invention for the injection of minority charge carriers into the epitaxial region which are subsequently transferred to output means by the CCD. The substrate is biased so that a portion of the flow of minority carriers in the epitaxial layer will be diverted toward the backside electrode when the detection region is raised to conduction by the incidence of photon energy so that a subtractive indication of the radiation is obtained while harmful double injection and attendant substrate breakdown are avoided.
摘要翻译：一种用于改进红外检测器的操作的方法和装置，其通常以第一导电类型的半导体衬底为特征，其包括由重掺杂的背面电极和第一导电类型的掩埋层限定或界定的检测区域。一种电荷耦合器件（CCD）读出结构，用于在覆盖衬底的第二导电类型的外延层中传送电荷，并且检测器还包括位于外延层和衬底之间的第二导电类型的重掺杂层，以屏蔽基板的电荷载体由CCD电压。本发明提供了用于将少数电荷载流子注入到外延区域中的手段，其随后由CCD转移到输出装置。衬底被偏置，使得当通过光子能量的入射使检测区域升高到导通时，外延层中的少数载流子流的一部分将被转向背侧电极，从而获得辐射的减法指示，同时避免了有害的双重注入和伴随的衬底击穿。

6. 发明授权

US5666130A Point addressable display assembly, method of operating same, and method of fabricating same 失效
标题翻译：点可寻址显示组件，操作方法及其制造方法
公开(公告)号：US5666130A
公开(公告)日：1997-09-09
申请号：US288375
申请日：1994-08-10
申请人： Ronald L. Williams , Ronald M. Finnila
发明人： Ronald L. Williams , Ronald M. Finnila
IPC分类号： G09G3/20 , G09G3/36
CPC分类号： G09G3/3648 , G09G3/3659 , G09G2300/0809 , G09G2300/0842 , G09G2300/0852 , G09G2310/0251 , G09G2330/08 , G09G3/2011
摘要： A method of operating a liquid crystal display, and a liquid crystal display constructed to operate in accordance with the method. The liquid crystal display has a plurality of display pixels, and the method comprises the steps of (a) operating a first switch (S1) for storing a charge on a storage capacitance (C1), the charge having a magnitude selected so as to cause a desired degree of polarization of a region (pixel) of liquid crystal material; (b) operating a second switch (S2) so as to conductively couple the stored charge to the region of liquid crystal material, thereby storing a charge on a capacitance (C2) that is associated with the region of liquid crystal material; and (c) operating a third switch (S3) so as to discharge the storage capacitance and the capacitance that is associated with the region of liquid crystal material. Also disclosed is a method of fabricating a display assembly that comprises a layer of liquid crystal material and a plurality of drive circuits that are formed within a common layer of semiconductor material.
摘要翻译：一种操作液晶显示器的方法，以及根据该方法操作的液晶显示器。液晶显示器具有多个显示像素，该方法包括以下步骤：（a）操作用于在存储电容（C1）上存储电荷的第一开关（S1），所述电荷具有被选择的幅度，从而导致液晶材料的区域（像素）的期望偏振度; （b）操作第二开关（S2），以将所存储的电荷导电耦合到液晶材料区域，从而将电荷存储在与液晶材料区域相关联的电容（C2）上; 和（c）操作第三开关（S3），以便释放与液晶材料区域相关联的存储电容和电容。还公开了一种制造显示组件的方法，该显示组件包括形成在公共半导体材料层内的液晶材料层和多个驱动电路。

7. 发明授权

US5591678A Process of manufacturing a microelectric device using a removable support substrate and etch-stop 失效
标题翻译：使用可移除的支撑衬底和蚀刻停止来制造微电子器件的工艺
公开(公告)号：US5591678A
公开(公告)日：1997-01-07
申请号：US482172
申请日：1995-06-07
申请人： Joseph J. Bendik , Gerard T. Malloy , Ronald M. Finnila
发明人： Joseph J. Bendik , Gerard T. Malloy , Ronald M. Finnila
IPC分类号： H01L21/20 , H01L21/68 , H01L21/98 , H01L21/283 , H01L21/56 , H01L21/58 , H01L21/60
CPC分类号： H01L21/6835 , H01L21/2007 , H01L25/50 , H01L2221/68359 , H01L2221/68363 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01019 , H01L2924/10253 , Y10S148/135 , Y10S148/15 , Y10S438/977
摘要： A microelectronic device is fabricated by furnishing a first substrate (40) having a silicon etchable layer (42), a silicon dioxide etch-stop layer (44) overlying the silicon layer (42), and a single-crystal silicon wafer (46) overlying the etch-stop layer (44), the wafer (46) having a front surface (52) not contacting the etch stop layer (44). A microelectronic circuit element (50) is formed in the single-crystal silicon wafer (46). The method further includes attaching the front surface (52) of the single-crystal silicon wafer (46) to a second substrate (58), and etching away the silicon layer (42) of the first substrate (40) down to the etch-stop layer (44). The second substrate (58) may also have a microelectronic circuit element (58') therein that can be electrically interconnected to the microelectronic circuit element (50).
摘要翻译：通过提供具有硅可蚀刻层（42）的第一衬底（40），覆盖硅层（42）的二氧化硅蚀刻停止层（44）和单晶硅晶片（46）来制造微电子器件，覆盖蚀刻停止层（44），晶片（46）具有不接触蚀刻停止层（44）的前表面（52）。微电子电路元件（50）形成在单晶硅晶片（46）中。该方法还包括将单晶硅晶片（46）的前表面（52）附接到第二基板（58），并将第一基板（40）的硅层（42）蚀刻到蚀刻 - 停止层（44）。第二基板（58）也可以在其中具有微电子电路元件（58'），其可以电连接到微电子电路元件（50）。

8. 发明授权

US4142198A Monolithic extrinsic silicon infrared detectors with an improved charge collection structure 失效
标题翻译：具有改进的电荷收集结构的单片非晶硅红外探测器
公开(公告)号：US4142198A
公开(公告)日：1979-02-27
申请号：US702548
申请日：1976-07-06
申请人： Ronald M. Finnila , Stephen C. Su
发明人： Ronald M. Finnila , Stephen C. Su
IPC分类号： H01L27/148 , H01L29/78 , G11C19/28 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14875 , Y10S148/08
摘要： There is disclosed an all silicon monolithic focal plane array of infrared detectors for image detection. The structure comprises an epitaxial layer grown on an extrinsically doped silicon substrate. The detectors are formed in and extend through the substrate, the material of which is sensitive to specific wavelength infrared signals according to the dopant used in the substrate. The collection of charges takes place on a buried layer formed around a portion of the epitaxial layer-substrate interface, and the charges are then transferred through a surface layer of the same conductivity type to the surface of the epitaxial layer. The signal readout function is performed by a charge coupled device shift register constructed in the epitaxial layer by providing selectively spaced electrodes in an insulating layer. Carriers generated in the detector by incident infrared radiation are collected into the buried layer and then pass through the surface layer, are injected therefrom into the CCD shift register and are detected at the output. The monolithic construction and the use of an epitaxial layer to form the CCD shift register result in high yield and high efficiency devices. The planar surface of the device improves the aluminum step coverage for a more reliable device, and the use of the buried layer improves the fill factor of the detector.
摘要翻译：公开了用于图像检测的全硅单片焦平面阵列红外探测器。该结构包括在外掺硅衬底上生长的外延层。检测器形成并延伸穿过衬底，根据衬底中使用的掺杂剂，其材料对特定波长的红外信号敏感。电荷的收集发生在围绕外延层 - 衬底界面的一部分形成的掩埋层上，然后电荷通过相同导电类型的表面层转移到外延层的表面。通过在绝缘层中提供选择性间隔的电极，通过在外延层中构造的电荷耦合器件移位寄存器来执行信号读出功能。通过入射红外辐射在检测器中产生的载体被收集到掩埋层中，然后通过表面层，从其中注入到CCD移位寄存器中，并在输出端检测。单片结构和使用外延层形成CCD移位寄存器导致高产量和高效率器件。器件的平面可以提高铝合金台阶的覆盖范围，使其更可靠，并且掩埋层的使用提高了检测器的填充系数。

9. 发明授权

US5426072A Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate 失效
标题翻译：使用临时硅衬底从堆叠的SOI晶片制造三维集成电路的工艺
公开(公告)号：US5426072A
公开(公告)日：1995-06-20
申请号：US006601
申请日：1993-01-21
申请人： Ronald M. Finnila
发明人： Ronald M. Finnila
IPC分类号： H01L27/00 , H01L21/60 , H01L21/768 , H01L23/48 , H01L25/065 , H01L27/12 , H01L21/283 , H01L21/56 , H01L21/58
CPC分类号： H01L25/0657 , H01L21/76898 , H01L23/481 , H01L21/76895 , H01L2224/16145 , H01L2225/06517 , H01L2225/06586 , H01L2225/06596 , H01L2924/01014 , H01L2924/13091 , Y10S438/928
摘要： A method of providing a first and a second Silicon-on-Insulator (SOI) wafer, wherein each SOI wafer includes a silicon layer separated from a bulk silicon substrate by a layer of dielectric material, typically SiO2. Next, at least one electrical feedthrough is formed in each of the silicon layers and active and passive devices are formed in each of the thin silicon layers. Next, interconnects are formed that overlie the silicon layer and are electrically coupled to the feedthrough. One of the wafers is then attached to a temporary substrate such that the interconnects are interposed between the thin silicon layer and the temporary substrate. The bulk silicon substrate of the wafer having the temporary substrate is then etched to expose the dielectric layer. Further interconnects are then formed through the exposed dielectric layer for electrically contacting the at least one feedthrough. This results in the formation of a first circuit assembly. A next step then couples the further interconnects of the circuit assembly to the interconnects of the second SOI wafer, the second SOI wafer having a bulk substrate, a dielectric layer overlying a surface of the substrate, and a layer of processed silicon overlying the dielectric layer. The temporary substrate is then removed. Additional circuit assemblies may then be stacked and interconnected to form a 3d integrated circuit.
摘要翻译：一种提供第一和第二绝缘体上硅（SOI）晶片的方法，其中每个SOI晶片包括通过介电材料层（通常为SiO 2）与体硅衬底分离的硅层。接下来，在每个硅层中形成至少一个电馈通孔，并且在每个薄硅层中形成有源和无源器件。接下来，形成覆盖在硅层上并且与馈通电耦合的互连。然后将其中一个晶片连接到临时基板，使得互连被插入在薄硅层和临时基板之间。然后蚀刻具有临时衬底的晶片的体硅衬底以暴露电介质层。然后通过暴露的电介质层形成进一步的互连，用于电接触至少一个馈通。这导致形成第一电路组件。接下来的步骤然后将电路组件的另外的互连件耦合到第二SOI晶片的互连，第二SOI晶片具有体基板，覆盖在衬底表面上的电介质层和覆盖在介电层上的处理硅层。然后移除临时底物。然后可以将附加电路组件堆叠并互连以形成3d集成电路。

10. 发明授权

US4197553A Monolithic extrinsic silicon infrared detector structure employing multi-epitaxial layers 失效
标题翻译：采用多外延层的单片外在硅红外探测器结构
公开(公告)号：US4197553A
公开(公告)日：1980-04-08
申请号：US720865
申请日：1976-09-07
申请人： Ronald M. Finnila , Stephen C. Su
发明人： Ronald M. Finnila , Stephen C. Su
IPC分类号： H01L27/148 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14875
摘要： There is disclosed an all silicon monolithic focal plane array of infrared detectors for image detection. The structure comprises two epitaxial layers grown on an extrinsically doped silicon substrate. The detectors are formed in and extend through the substrate, the material of which is sensitive to specific wavelength infrared signals according to the dopant used in the substrate. The collection of charges takes place on a first buried layer formed around a portion of the first epitaxial layer-substrate interface, and the charges are then transferred through a second buried layer of the same conductivity type to a conducting surface layer on the upper portion of the second epitaxial layer. The signal readout function is performed by a charge coupled device shift register constructed in the second epitaxial layer by providing selectively spaced electrodes in an insulating layer. Carriers generated in the detector by incident infrared radiation are collected into the first buried layer and then pass through the second buried layer to the surface layer and they are injected therefrom into the CCD shift register and are detected at the output. The monolithic construction and the use of an epitaxial layer to form the CCD shift register result in high yield and high efficiency devices. The use of two epitaxial layers in the device improves its responsivity, its fill factor and better isolates the operation of its CCD circuits from its detector elements.
摘要翻译：公开了用于图像检测的全硅单片焦平面阵列红外探测器。该结构包括在外掺硅衬底上生长的两个外延层。检测器形成并延伸穿过衬底，根据衬底中使用的掺杂剂，其材料对特定波长的红外信号敏感。电荷收集发生在围绕第一外延层 - 衬底界面的一部分形成的第一掩埋层上，然后电荷通过相同导电类型的第二掩埋层转移到导电表面层的上部第二外延层。通过在绝缘层中提供选择性间隔开的电极，通过在第二外延层中构造的电荷耦合器件移位寄存器来执行信号读出功能。通过入射红外辐射在检测器中产生的载体被收集到第一掩埋层中，然后穿过第二掩埋层到表面层，并将它们从其中注入到CCD移位寄存器中，并在输出端检测。单片结构和使用外延层形成CCD移位寄存器导致高产量和高效率器件。在器件中使用两个外延层可提高其响应度及其填充因子，并更好地将其CCD电路与其检测器元件的操作隔离开来。

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