专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08329838B2 Norbornene-type polymers, compositions thereof and lithographic processes using such compositions 失效
标题翻译：降冰片烯型聚合物，其组合物和使用这种组合物的平版印刷方法
公开(公告)号：US08329838B2
公开(公告)日：2012-12-11
申请号：US12884786
申请日：2010-09-17
申请人： Larry F. Rhodes , Chun Chang , Pramod Kandanarachchi , Lawrence D. Seger , Keita Ishiduka , Kotaro Endo , Tomoyuki Ando
发明人： Larry F. Rhodes , Chun Chang , Pramod Kandanarachchi , Lawrence D. Seger , Keita Ishiduka , Kotaro Endo , Tomoyuki Ando
IPC分类号： G03F7/039 , G03F7/038 , C08F32/04
CPC分类号： G03F7/0395 , C08F232/08 , G03F7/0046 , G03F7/11 , G03F7/2041 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present invention relate generally to non-self imagable and imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.
摘要翻译：本发明的实施方案一般涉及可用于浸渍式光刻工艺的非自成像和可成象的降冰片烯型聚合物，制备这种聚合物的方法，使用这种聚合物的组合物以及使用这种组合物的浸渍光刻工艺。更具体地，本发明的实施方案涉及可用于在浸没式光刻工艺中形成成像层和用于覆盖这种成像层的顶涂层的降冰片烯型聚合物及其工艺。

2. 发明申请

US20100086879A1 MATERIAL FOR FORMATION OF PROTECTIVE FILM, METHOD FOR FORMATION OF PHOTORESIST PATTERN, AND SOLUTION FOR WASHING/REMOVAL OF PROTECTIVE FILM 有权
标题翻译：形成保护膜的材料，形成光电子图案的方法和用于洗涤/去除保护膜的方法
公开(公告)号：US20100086879A1
公开(公告)日：2010-04-08
申请号：US12441514
申请日：2007-09-13
申请人： Toshikazu Takayama , Keita Ishiduka , Hideo Hada , Shigeru Yokoi
发明人： Toshikazu Takayama , Keita Ishiduka , Hideo Hada , Shigeru Yokoi
IPC分类号： G03F7/20 , C08L55/00 , C08K5/01 , G03F7/00
CPC分类号： G03F7/11 , G03F7/2041 , Y10S430/106 , Y10S430/146
摘要： Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.
摘要翻译：公开了一种用于形成层压在光致抗蚀剂膜上的保护膜的材料，其可以防止由具有高斥水性的对环境影响很小的光致抗蚀剂膜产生的废气对曝光装置的污染性质，其微小地引起与光致抗蚀剂膜的混合，并且其可以形成高分辨率光致抗蚀剂图案; 形成光致抗蚀剂图案的方法; 以及洗涤/除去保护膜的溶液。具体公开的是：形成保护膜的材料，其包含（a）非极性聚合物和（b）非极性溶剂; 通过使用该材料形成光致抗蚀剂图案的方法; 以及旨在用于该方法的保护膜的洗涤/去除溶液。

3. 发明申请

US20090208871A1 NOVEL COMPOUND AND METHOD OF PRODUCING SAME, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：新型化合物及其制造方法，酸发生器，耐蚀组合物和形成耐蚀图案的方法
公开(公告)号：US20090208871A1
公开(公告)日：2009-08-20
申请号：US12371876
申请日：2009-02-16
申请人： Akiya Kawaue , Keita Ishiduka , Kensuke Matsuzawa , Yoshiyuki Utsumi , Hiroaki Shimizu
发明人： Akiya Kawaue , Keita Ishiduka , Kensuke Matsuzawa , Yoshiyuki Utsumi , Hiroaki Shimizu
IPC分类号： G03F7/20 , G03F7/004 , C07D307/77
CPC分类号： C07D493/08 , C07D493/18 , G03F7/0045 , G03F7/0397
摘要： A resist composition including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the acid generator component (B) includes an acid generator (B1) consisting of a compound represented by general formula (b1-2) shown below: [Chemical Formula 1] A+Z− (b1-2) wherein A+ represents an organic cation; and Z− represents an anionic cyclic group, wherein the cyclic group includes an ester linkage within the ring structure, two mutually different groups are bonded to the ring structure, one of these groups includes an ester linkage in which a carbon atom that constitutes part of the ester linkage is bonded directly to the ring structure, and the other group includes an anion moiety.
摘要翻译：一种抗蚀剂组合物，其包含在酸性作用下在碱性显影液中表现出改变的溶解性的碱成分（A）和曝光时产生酸的酸产生剂成分（B），其中，所述酸发生剂成分（B）含有酸发生器（B1）由以下所示的通式（b1-2）表示的化合物组成：<？in-line-formula description =“In-line Formulas”end =“lead”？> [化学式1] < -line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> A + Z-（b1-2） <？in-line-formula description =“In-line formula”end =“tail”？>其中A +表示有机阳离子; Z-表示阴离子性环状基团，其中环状基团在环结构中包含酯键，两个相互不同的基团与环结构键合，这些基团之一包括酯键，其中构成酯键直接键合到环结构上，另一个基团包括阴离子部分。

4. 发明授权

US07488568B2 Resist composition, method of forming resist pattern, compound and acid generator 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法，化合物和酸发生剂
公开(公告)号：US07488568B2
公开(公告)日：2009-02-10
申请号：US12060695
申请日：2008-04-01
申请人： Takeshi Iwai , Hideo Hada , Masaru Takeshita , Akiya Kawaue , Keita Ishiduka , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo , Kensuke Matsuzawa
发明人： Takeshi Iwai , Hideo Hada , Masaru Takeshita , Akiya Kawaue , Keita Ishiduka , Hiroaki Shimizu , Kyoko Ohshita , Tsuyoshi Nakamura , Komei Hirahara , Yuichi Suzuki , Takehiro Seshimo , Kensuke Matsuzawa
IPC分类号： G03F7/004 , G03F7/30 , C07D333/46
CPC分类号： C07D333/76 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/123
摘要： A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein R401 represents an acid dissociable, dissolution inhibiting group; R41 to R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and X− represents an anion) or an acid generator (B1′) including a compound represented by general formula (b1-9) shown below (wherein R402 and R403 each independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R404 represents an alkyl group or a halogenated alkyl group, wherein R403 and R404 may be bonded to each other to form a ring structure; and X− represents an anion).
摘要翻译：包含基础组分（A）和酸产生剂组分（B）的抗蚀剂组合物，所述酸产生剂组分（B）包括含有下述通式（b1-8）表示的化合物的酸产生剂（B1）（其中R401表示酸解离的溶解抑制基团; R 41至R 43各自独立地表示卤素原子，卤代烷基，烷基，乙酰基，烷氧基，羧基或羟烷基; Q表示二价连接基团或单键; X表示阴离子）或包含下述通式（b1-9）表示的化合物的酸产生剂（B1'）（其中R402和R403各自独立地表示氢原子，烷基基团或卤代烷基; R404表示烷基或卤代烷基，其中R403和R404可以彼此键合以形成环结构;并且X-表示阴离子）。

5. 发明申请

US20060154171A1 Photoresist composition and method of forming resist pattern 审中-公开
标题翻译：光刻胶组合物和形成抗蚀剂图案的方法
公开(公告)号：US20060154171A1
公开(公告)日：2006-07-13
申请号：US10546573
申请日：2004-02-25
申请人： Taku Hirayama , Satoshi Fujimura , Kataro Endo , Keita Ishiduka
发明人： Taku Hirayama , Satoshi Fujimura , Kataro Endo , Keita Ishiduka
IPC分类号： G03C1/76
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0395 , G03F7/2041
摘要： There is provided a positive photoresist composition for use in a method of forming a resist pattern that includes an immersion lithography step, which exhibits little line edge roughness and an excellent resist pattern profile. This photoresist composition includes a resin component (A), an acid generator component (B), an organic solvent (C), and a nitrogen-containing organic compound (D) represented by a general formula (1) shown below: [wherein, X, Y, and Z each represent, independently, an alkyl group that may contain an aryl group bonded to a terminal (although two terminals from the groups X, Y, and Z may also be bonded together to form a cyclic structure), at least one of X, Y, and Z contains a polar group, and the molecular weight of the compound (D) is at least 200].
摘要翻译：提供了一种用于形成抗蚀剂图案的方法中的正型光致抗蚀剂组合物，其包括浸渍光刻步骤，其显示出较小的线边缘粗糙度和优异的抗蚀剂图案轮廓。该光致抗蚀剂组合物包含由下述通式（1）表示的树脂组分（A），酸产生剂组分（B），有机溶剂（C）和含氮有机化合物（D）：[其中， X，Y和Z各自独立地表示可以含有与末端键合的芳基的烷基（尽管X，Y和Z组中的两个末端也可以结合在一起形成环状结构）， X，Y和Z中的至少一个含有极性基团，化合物（D）的分子量至少为200]。

6. 发明授权

US08338076B2 Resist composition, method of forming resist pattern, novel compound, and acid generator 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法，新型化合物和酸发生剂
公开(公告)号：US08338076B2
公开(公告)日：2012-12-25
申请号：US12591639
申请日：2009-11-25
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Hideo Hada , Takehiro Seshimo , Kensuke Matsuzawa , Keita Ishiduka , Kotaro Endo
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Hideo Hada , Takehiro Seshimo , Kensuke Matsuzawa , Keita Ishiduka , Kotaro Endo
IPC分类号： G03F7/004 , G03F7/028 , G03F7/039 , G03F7/26 , C07C381/12
CPC分类号： C07D327/04 , C07D307/33 , C07D307/93 , C07D307/94 , C07D309/30 , C07D409/12 , C07D493/18 , C07D497/18 , G03F7/0045 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety comprising a group represented by general formula (I) (in the formula, R5 represents an organic group having a carbonyl group, an ester bond or a sulfonyl group; and Q represents a divalent linking group).
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），所述酸发生剂成分（B）含有酸发生剂（B1），其含有具有由通式（I）表示的基团的阳离子部分的化合物（式中，R5表示具有羰基，酯键或磺酰基的有机基团，Q表示二价连接基团）。

7. 发明授权

US08247160B2 Resist composition, method of forming resist pattern, and novel compound and acid generator 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法，新型化合物和酸发生剂
公开(公告)号：US08247160B2
公开(公告)日：2012-08-21
申请号：US12501981
申请日：2009-07-13
申请人： Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Akiya Kawaue , Hiroaki Shimizu , Tsuyoshi Nakamura
发明人： Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Akiya Kawaue , Hiroaki Shimizu , Tsuyoshi Nakamura
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C07C309/65
CPC分类号： C07C381/12 , C07C309/12 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component that exhibits changed solubility in an alkali developing solution under the action of acid, and an acid generator consisting of a compound represented by general formula (b1). In formula (b1), Y1 represents a fluorinated alkylene group of 1 to 4 carbon atoms, X represents an aliphatic cyclic group of 3 to 30 carbon atoms, R11′ to R13′ each represents an aryl group or alkyl group, provided that at least one of R11′ to R13′ is an aryl group having a substituent represented by general formula (b1-0), and two alkyl groups among R11′ to R13′ may be bonded to each other to form a ring with the sulfur atom in the formula. In formula (b1-0), R52 represents a chain-like or cyclic hydrocarbon group, and f and g each represents 0 or 1.
摘要翻译：一种抗蚀剂组合物，其包含在酸性作用下在碱性显影液中表现出改变的溶解度的碱成分和由通式（b1）表示的化合物组成的酸发生剂。在式（b1）中，Y1表示1〜4个碳原子的氟化亚烷基，X表示3〜30个碳原子的脂肪族环状基团，R 11'〜R 13'表示芳基或烷基， R11'〜R13'中的一个为具有通式（b1-0）所示取代基的芳基，R11'至R13'中的两个烷基可以彼此键合形成环中的硫原子式。在式（b1-0）中，R 52表示链状或环状烃基，f和g各自表示0或1。

8. 发明授权

US08211616B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08211616B2
公开(公告)日：2012-07-03
申请号：US12500528
申请日：2009-07-09
申请人： Hiroaki Shimizu , Tsuyoshi Nakamura , Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Akiya Kawaue
发明人： Hiroaki Shimizu , Tsuyoshi Nakamura , Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Akiya Kawaue
IPC分类号： G03F7/039 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041
摘要： A positive resist composition including a resin component (A) having a structural unit (a0) represented by general formula (a0-1) (R represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; R1 represents a C3 or more branched alkyl group; and each of R2 and R3 independently represents an alkyl group, wherein R2 and R3 may be mutually bonded to form a polycyclic group) and/or general formula (a0-2) (R is the same as defined above; R8 represents a divalent linking group that contains no halogen atom; and R7 represents an acid dissociable, dissolution inhibiting group), and an acid generator (B1) consisting of a compound represented by general formula (b1) (Y1 represents a C1-C4 fluorinated alkylene group which may have a substituent; X represents a C3-C30 aliphatic cyclic group which may have a substituent; and A+ represents an organic cation).
摘要翻译：一种正型抗蚀剂组合物，其包含具有由通式（a0-1）表示的结构单元（a0）的树脂组分（A）（R表示氢原子，C1-C5烷基或C1-C5卤代烷基; R1 表示C3或更多支链烷基; R2和R3各自独立地表示烷基，其中R2和R3可以相互键合形成多环基）和/或通式（a0-2）（R相同） R8表示不含卤原子的二价连接基团，R7表示酸解离性溶解抑制基团）和由通式（b1）表示的化合物（Y1）表示的酸产生剂（B1）可以具有取代基的C1-C4氟化亚烷基; X表示可具有取代基的C 3 -C 30脂族环基; A +表示有机阳离子。

9. 发明授权

US07799883B2 Norbornene-type polymers, compositions thereof and lithographic process using such compositions 有权
标题翻译：降冰片烯型聚合物，其组合物和使用这种组合物的平版印刷方法
公开(公告)号：US07799883B2
公开(公告)日：2010-09-21
申请号：US11359880
申请日：2006-02-22
申请人： Larry F. Rhodes , Chun Chang , Pramod Kandanarachchi , Lawrence D. Seger , Keita Ishiduka , Kotaro Endo , Tomoyuki Ando
发明人： Larry F. Rhodes , Chun Chang , Pramod Kandanarachchi , Lawrence D. Seger , Keita Ishiduka , Kotaro Endo , Tomoyuki Ando
IPC分类号： C08F32/08 , G03F7/11 , G03F7/038 , H01L23/48
CPC分类号： G03F7/0395 , C08F232/08 , G03F7/0046 , G03F7/11 , G03F7/2041 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present invention relate generally to non-self imageable and imageable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.
摘要翻译：本发明的实施方案一般涉及可用于浸渍光刻工艺的非自成像和可成像的降冰片烯型聚合物，制备这种聚合物的方法，使用这种聚合物的组合物以及使用这种组合物的浸渍光刻工艺。更具体地，本发明的实施方案涉及可用于在浸没式光刻工艺中形成成像层和用于覆盖这种成像层的顶涂层的降冰片烯型聚合物及其工艺。

10. 发明授权

US07745097B2 Compound, manufacturing method thereof, acid generator, resist composition and method of forming resist pattern 失效
标题翻译：化合物，其制造方法，酸产生剂，抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07745097B2
公开(公告)日：2010-06-29
申请号：US12174293
申请日：2008-07-16
申请人： Hideo Hada , Takeshi Iwai , Takehiro Seshimo , Akiya Kawaue , Keita Ishiduka
发明人： Hideo Hada , Takeshi Iwai , Takehiro Seshimo , Akiya Kawaue , Keita Ishiduka
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： C07D335/02 , C07C309/04 , C07D333/46 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： There are provided a novel compound represented by a general formula (b1-1) shown below, which is useful as an acid generator for a resist composition and a manufacturing method thereof, a compound useful as a precursor of the novel compound and a manufacturing method thereof, an acid generator, a resist composition and a method of forming a resist pattern. (wherein, R1 represents an aryl group or alkyl group which may contain a substituent group; R3 represents a hydrogen atom or an alkyl group; n1 represents an integer of 0 or 1, and in the case that n1 is 1, R1 and R3 may mutually be bonded to form a ring with a 3- to 7-membered ring structure together with the carbon atom with which R1 is bonded and the carbon atom with which R3 is bonded; A represents a bivalent group which forms a ring with 3- to 7-membered ring structure together with the sulfur atom with which A is bonded, and the ring may contain a substituent group; R2 represents an aromatic group which may contain a substituent group, a linear or branched alkyl group of 1 to 10 carbon atoms which may contain a substituent group, or a linear or branched alkenyl group of 2 to 10 carbon atoms which may contain a substituent group; n represents an integer of 0 or 1; and Y1 represents an alkylene group of 1 to 4 carbon atoms in which hydrogen atoms may be substituted with fluorine atoms.).
摘要翻译：提供了由下述通式（b1-1）表示的新化合物，其可用作抗蚀剂组合物的酸产生剂及其制备方法，可用作新化合物的前体的化合物和制备方法酸产生剂，抗蚀剂组合物和形成抗蚀剂图案的方法。（其中，R1表示可以含有取代基的芳基或烷基，R3表示氢原子或烷基，n1表示0或1的整数，在n1为1的情况下，R 1和R 3可以相互键合形成具有3〜7元环结构的环以及与R 1键合的碳原子和与R3结合的碳原子; A表示与3-至 7元环结构与A键合的硫原子一起形成，环可含有取代基; R2表示可含有取代基的芳香族基团，碳原子数1〜10的直链或支链烷基，可以含有取代基，或可以含有取代基的2〜10个碳原子的直链或支链烯基; n表示0或1的整数; Y1表示碳原子数为1〜4的亚烷基，其中氢原子可以被氟取代 oms）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式