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1. 发明授权

US08872229B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08872229B2
公开(公告)日：2014-10-28
申请号：US13528846
申请日：2012-06-21
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L29/45
摘要： A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region.
摘要翻译：薄膜晶体管包括衬底和形成在衬底上的有源层。有源层包括沟道区，源极区和漏极区。在源极区域和漏极区域分别形成源电极和漏电极。在栅电极和沟道区之间形成栅极绝缘层。薄膜晶体管还包括形成在漏极和漏极区之间以及在源极和源极区之间的氮化物导电层。氮化物导电层的载流子浓度高于有源层的载流子浓度，从而减小漏电极和漏极区之间以及源电极和源极区之间的接触电阻。

2. 发明申请

US20130256651A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20130256651A1
公开(公告)日：2013-10-03
申请号：US13528846
申请日：2012-06-21
申请人： JIAN-SHIHN TSANG
发明人： JIAN-SHIHN TSANG
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/45
摘要： A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region.
摘要翻译：薄膜晶体管包括衬底和形成在衬底上的有源层。有源层包括沟道区，源极区和漏极区。在源极区域和漏极区域分别形成源电极和漏电极。在栅电极和沟道区之间形成栅极绝缘层。薄膜晶体管还包括形成在漏极和漏极区之间以及在源极和源极区之间的氮化物导电层。氮化物导电层的载流子浓度高于有源层的载流子浓度，从而减小漏电极和漏极区之间以及源电极和源极区之间的接触电阻。

3. 发明授权

US08431956B2 Light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure 失效
标题翻译：发光芯片具有碳纳米管结构中具有氮化物半导体的缓冲层
公开(公告)号：US08431956B2
公开(公告)日：2013-04-30
申请号：US13091141
申请日：2011-04-21
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L29/26
CPC分类号： H01L33/0075 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02403 , H01L21/0242 , H01L21/02444 , H01L21/02513 , H01L21/0254 , H01L33/007 , H01L33/12 , H01L33/20 , Y10S977/742
摘要： A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.
摘要翻译：发光芯片包括基板，缓冲层，盖层和发光结构。缓冲层形成在衬底上，并且包括基本上平行于衬底的碳纳米管结构。碳纳米管结构由氮化物半导体构成。盖层从缓冲层生长。发光结构形成在盖层上。发光结构依次包括与盖层连接的第一包层，发光层和第二包层。

4. 发明申请

US20130075717A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20130075717A1
公开(公告)日：2013-03-28
申请号：US13308549
申请日：2011-12-01
申请人： JIAN-SHIHN TSANG
发明人： JIAN-SHIHN TSANG
IPC分类号： H01L29/12
CPC分类号： H01L29/7869
摘要： A thin film transistor for a semiconductor device is disclosed. The thin film transistor comprises a substrate; a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material; a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a band gap smaller than a band gap of the first oxide semiconductor material; a gate electrode formed on the channel region; and a gate insulating layer sandwiched between the gate electrode and the channel region.
摘要翻译：公开了一种用于半导体器件的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的沟道区域，所述沟道区域由第一氧化物半导体材料制成; 源极区域和漏极区域，形成在沟道区域的每个侧面上，源极区域和漏极区域由第二氧化物半导体材料制成，所述第二氧化物半导体材料具有小于所述第二氧化物半导体材料的带隙的带隙第一氧化物半导体材料; 形成在沟道区上的栅电极; 以及夹在栅电极和沟道区之间的栅极绝缘层。

5. 发明申请

US20120241724A1 LIGHT EMITTING CHIP 失效
标题翻译：发光芯片
公开(公告)号：US20120241724A1
公开(公告)日：2012-09-27
申请号：US13283610
申请日：2011-10-28
申请人： JIAN-SHIHN TSANG
发明人： JIAN-SHIHN TSANG
IPC分类号： H01L33/04
CPC分类号： H01L33/46 , H01L33/025 , H01L33/382 , H01L33/42 , H01L2933/0016
摘要： A light emitting chip includes a substrate, a reflective layer, a light emitting structure and a first electrode having a base formed between the reflective layer and the substrate. The light emitting structure includes a first semiconductor layer, an active layer and a second semiconductor layer. The first electrode further includes a connecting section extending upwardly from the base. An electrically insulating ion region is defined in the light emitting structure and extends from an upper surface of the base to the first semiconductor layer. A receiving groove is defined in the ion region and extends upwardly from the upper surface of the base to the first semiconductor layer. The connecting section is positioned in the receiving groove and electrically connects with the first semiconductor layer.
摘要翻译：发光芯片包括基板，反射层，发光结构和在反射层和基板之间形成有基部的第一电极。发光结构包括第一半导体层，有源层和第二半导体层。第一电极还包括从基座向上延伸的连接部分。在发光结构中限定电绝缘的离子区，并从基底的上表面延伸到第一半导体层。接收槽限定在离子区域中，并从基底的上表面向上延伸到第一半导体层。连接部位于接收槽内，与第一半导体层电连接。

6. 发明申请

US20120190172A1 METHOD FOR MAKING GALLIUM NITRIDE SUBSTRATE 失效
标题翻译：制备氮化镓底物的方法
公开(公告)号：US20120190172A1
公开(公告)日：2012-07-26
申请号：US13049911
申请日：2011-03-17
申请人： JIAN-SHIHN TSANG
发明人： JIAN-SHIHN TSANG
IPC分类号： H01L21/301 , H01L21/265
CPC分类号： H01L29/2003 , C30B29/406 , C30B33/06 , H01L21/76254 , H01L33/005
摘要： A method for making a GaN substrate for growth of nitride semiconductor is provided. The method first provides a GaN single crystal substrate. Then an ion implanting layer is formed inside the GaN single crystal substrate, which divides the GaN single crystal substrate into a first section and a second section. After that, the GaN single crystal substrate is connected with an assistant substrate through a connecting layer. Thereafter, the GaN single crystal substrate is heated whereby the ion implanting layer is decompounded. Finally, the second section is separated from the first section. The first section left on a surface of the assistant substrate is provided for growth of nitride semiconductor thereon.
摘要翻译：提供了制造用于氮化物半导体生长的GaN衬底的方法。该方法首先提供GaN单晶衬底。然后在GaN单晶衬底内部形成离子注入层，其将GaN单晶衬底划分成第一部分和第二部分。之后，GaN单晶衬底通过连接层与辅助衬底连接。此后，加热GaN单晶衬底，从而分解离子注入层。最后，第二部分与第一部分分开。设置在辅助基板的表面上的第一部分用于在其上生长氮化物半导体。

7. 发明申请

US20120146058A1 LIGHT EMITTING DIODE MODULE PROVIDING STABLE COLOR TEMPERATURE 失效
标题翻译：发光二极管模块提供稳定的色温
公开(公告)号：US20120146058A1
公开(公告)日：2012-06-14
申请号：US13074021
申请日：2011-03-29
申请人： JIAN-SHIHN TSANG
发明人： JIAN-SHIHN TSANG
IPC分类号： H01L31/12
CPC分类号： H05B33/0857 , H05B33/0869
摘要： A light emitting diode module providing stable color temperature includes a plurality of light emitting diodes, at least one color sensor and a controller. The plurality of light emitting diodes can emit light with different wavelengths. The light emitting diode module providing stable color temperature includes a reflection region at the path of the light emitting from half peak angle of each light emitting diode. The color sensor detects the light having different wavelengths reflected from the reflection region. The controller adjusts driving currents of the light emitting diodes according to the luminous intensities of the light of the light emitting diodes reflected by the reflection region and detected by the color sensor.
摘要翻译：提供稳定色温的发光二极管模块包括多个发光二极管，至少一个颜色传感器和控制器。多个发光二极管可发射不同波长的光。提供稳定色温的发光二极管模块包括在每个发光二极管的半峰角发光的路径处的反射区域。颜色传感器检测从反射区域反射的具有不同波长的光。控制器根据由反射区域反射并由彩色传感器检测的发光二极管的光的发光强度来调节发光二极管的驱动电流。

8. 发明申请

US20120140449A1 LIGHT MODULE FOR LCD BACKLIGHT MODULE 有权
标题翻译： LCD背光模组的光模块
公开(公告)号：US20120140449A1
公开(公告)日：2012-06-07
申请号：US13370318
申请日：2012-02-10
申请人： IRENE CHEN , JIAN-SHIHN TSANG
发明人： IRENE CHEN , JIAN-SHIHN TSANG
IPC分类号： G09F13/04
CPC分类号： G02F1/133603 , H01L33/54
摘要： A light module of an LCD backlight module includes a circuit board and a plurality of light-emitting diodes (LEDs) arranged on the circuit board. Each of the LEDs has a wide far-field pattern and is without a reflector, and each of the LEDs includes at least one LED chip and a molding unit packaging the LED chip. The LED chip is electrically connected to the circuit board and is also suitable for backlighting use. When a light-emitting angle of each of the LEDs is at 120 degrees, a light intensity thereof is still more than 50% of the intensity at frontage.
摘要翻译： LCD背光模块的光模块包括布置在电路板上的电路板和多个发光二极管（LED）。每个LED具有宽的远场图案，并且没有反射器，并且每个LED包括至少一个LED芯片和封装LED芯片的模制单元。 LED芯片电连接到电路板，并且也适用于背光使用。当每个LED的发光角度为120度时，其光强度仍然大于正面强度的50％。

9. 发明申请

US20120075882A1 LIGHT EMITTING DIODE MODULE 审中-公开
标题翻译：发光二极管模块
公开(公告)号：US20120075882A1
公开(公告)日：2012-03-29
申请号：US13209446
申请日：2011-08-15
申请人： JIAN-SHIHN TSANG , CHING-CHUNG CHEN , YA-WEN LIN
发明人： JIAN-SHIHN TSANG , CHING-CHUNG CHEN , YA-WEN LIN
IPC分类号： F21V7/22 , F21V9/16
CPC分类号： G02B6/005
摘要： An LED module includes an LED and a light-guiding board. The light-guiding board includes a light-incident face facing the LED, a light-emergent face, a light-reflecting face opposite to the light-emergent face, and a light-converting layer containing phosphors therein. Light emitted from the LED sequentially moves the light-incident face, the light-converting layer and the light-emergent face to leave the light-guiding board. The light-converting layer has a uniform thickness.
摘要翻译： LED模块包括LED和导光板。导光板包括面向LED的光入射面，发光面，与发光面相对的光反射面，以及含有荧光体的光转换层。从LED发射的光依次移动光入射面，光转换层和光出射面离开导光板。光转换层具有均匀的厚度。

10. 发明申请

US20100067220A1 LIGHT SOURCE ASSEMBLY USING LIGHT EMITTING DIODES AND REFLECTIVE SHEET SET 失效
标题翻译：光源组件使用发光二极管和反射片组
公开(公告)号：US20100067220A1
公开(公告)日：2010-03-18
申请号：US12556123
申请日：2009-09-09
申请人： KUAN HER CHIU , IRENE CHEN , JIAN SHIHN TSANG
发明人： KUAN HER CHIU , IRENE CHEN , JIAN SHIHN TSANG
IPC分类号： G02F1/13357 , F21V7/00
CPC分类号： G02F1/133603 , G02F1/133605 , H05K1/0274 , H05K2201/10106 , H05K2201/2054
摘要： A light source assembly comprises a plurality of reflective sheets, a plurality of light emitting diodes and a printed circuit board. Each reflective sheet comprises a plate member and a plurality of openings formed on the plate member. The plurality of light emitting diodes are mounted on the printed circuit board. The plurality of reflective sheets are also mounted on the printed circuit board. The plurality of light emitting diodes are respectively located in the openings. The light emitted from the light emitting diodes is reflected by the surface of the plate member.
摘要翻译：光源组件包括多个反射片，多个发光二极管和印刷电路板。每个反射片包括板构件和形成在板构件上的多个开口。多个发光二极管安装在印刷电路板上。多个反射片也安装在印刷电路板上。多个发光二极管分别位于开口中。从发光二极管发出的光被板状部件的表面反射。

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