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1. 发明授权

US08872229B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08872229B2
公开(公告)日：2014-10-28
申请号：US13528846
申请日：2012-06-21
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L29/45
摘要： A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region.
摘要翻译：薄膜晶体管包括衬底和形成在衬底上的有源层。有源层包括沟道区，源极区和漏极区。在源极区域和漏极区域分别形成源电极和漏电极。在栅电极和沟道区之间形成栅极绝缘层。薄膜晶体管还包括形成在漏极和漏极区之间以及在源极和源极区之间的氮化物导电层。氮化物导电层的载流子浓度高于有源层的载流子浓度，从而减小漏电极和漏极区之间以及源电极和源极区之间的接触电阻。

2. 发明授权

US08431956B2 Light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure 失效
标题翻译：发光芯片具有碳纳米管结构中具有氮化物半导体的缓冲层
公开(公告)号：US08431956B2
公开(公告)日：2013-04-30
申请号：US13091141
申请日：2011-04-21
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L29/26
CPC分类号： H01L33/0075 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02403 , H01L21/0242 , H01L21/02444 , H01L21/02513 , H01L21/0254 , H01L33/007 , H01L33/12 , H01L33/20 , Y10S977/742
摘要： A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.
摘要翻译：发光芯片包括基板，缓冲层，盖层和发光结构。缓冲层形成在衬底上，并且包括基本上平行于衬底的碳纳米管结构。碳纳米管结构由氮化物半导体构成。盖层从缓冲层生长。发光结构形成在盖层上。发光结构依次包括与盖层连接的第一包层，发光层和第二包层。

3. 发明授权

US06110809A Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer 失效
标题翻译：制造具有III族金属氮化物外延层的外延晶片的方法
公开(公告)号：US06110809A
公开(公告)日：2000-08-29
申请号：US102675
申请日：1998-06-23
申请人： Simon M. Sze , Shih-Hsiung Chan , Jian-Shihn Tsang , Jan-Dar Guo , Wei-Chi Lai
发明人： Simon M. Sze , Shih-Hsiung Chan , Jian-Shihn Tsang , Jan-Dar Guo , Wei-Chi Lai
IPC分类号： C30B25/02 , H01L21/205 , H01L21/20
CPC分类号： C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/0262
摘要： A new method for manufacturing a Group III metal nitride epitaxial wafer comprises providing a first nitrogen-contained gas source, providing a second Group III metal trichloride--containing gas source, and causing said first gas to react with second gas in a heating region, thereby forming a Group III metal nitride epitaxial layer on a substrate. The formed epitaxial wafer can serve as a substrate of a laser diode.
摘要翻译：一种用于制造III族金属氮化物外延晶片的新方法包括提供第一含氮气体源，提供第二III族金属三氯化物气体源，并使所述第一气体与加热区域中的第二气体反应，由此在基板上形成III族金属氮化物外延层。所形成的外延晶片可以用作激光二极管的基板。

4. 发明授权

US08445920B1 Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US08445920B1
公开(公告)日：2013-05-21
申请号：US13396468
申请日：2012-02-14
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L33/00
CPC分类号： H01L33/508 , H01L33/44 , H01L2224/48091 , H01L2933/0091 , H01L2924/00014
摘要： A light emitting diode includes a substrate, two electrodes mounted on the substrate, a light emitting diode chip and an encapsulate sealing the light emitting diode chip. The encapsulant is doped with fluorescence particles and light diffusion particles. An average diameter of the diffusion particles is less than that of the fluorescence particles. A concentration of the diffusion particles in a portion of the encapsulant adjacent to a light output surface thereof is larger than that of the diffusion particles in a portion thereof adjacent to the chip. A concentration of the fluorescence particles in the portion of the encapsulant adjacent to the chip is larger than that of the fluorescence particles in the portion of the encapsulant adjacent to the light output surface.
摘要翻译：发光二极管包括基板，安装在基板上的两个电极，发光二极管芯片和密封发光二极管芯片的封装。该密封剂掺有荧光颗粒和光扩散颗粒。扩散粒子的平均粒径小于荧光粒子的直径。在与光输出表面相邻的密封剂的一部分中的扩散粒子的浓度大于在与芯片相邻的部分中的扩散粒子的浓度。与芯片相邻的密封剂部分中的荧光颗粒的浓度大于与光输出表面相邻的密封剂部分中的荧光颗粒的浓度。

5. 发明申请

US20120012872A1 LED PACKAGE STRUCTURE 失效
标题翻译： LED封装结构
公开(公告)号：US20120012872A1
公开(公告)日：2012-01-19
申请号：US12975232
申请日：2010-12-21
申请人： CHIA-HUI SHEN , Tzu-Chien Hung , Jian-Shihn Tsang
发明人： CHIA-HUI SHEN , Tzu-Chien Hung , Jian-Shihn Tsang
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/46 , H01L33/486 , H01L33/504 , H01L2224/16
摘要： An LED package structure includes a transparent substrate having a supporting face and a light-emergent face opposite to the supporting face, a housing disposed on the supporting face, two electrodes disposed on the housing, an LED chip disposed on the supporting face and electrically connected to the two electrodes, a reflecting layer covering the LED chip to reflect light emitted by the LED chip toward the transparent substrate, and a phosphor layer formed on the light-emergent face of the substrate. The phosphor layer includes a plurality of layers each having a specific light wavelength conversion range to generate a light with a predetermined color.
摘要翻译： LED封装结构包括具有支撑面和与支撑面相对的出光面的透明基板，设置在支撑面上的壳体，设置在壳体上的两个电极，设置在支撑面上并电连接的LED芯片向两个电极施加覆盖LED芯片以将由LED芯片发射的光反射到透明基板的反射层，以及形成在基板的发光面上的荧光体层。荧光体层包括多个具有特定光波长转换范围的层，以产生具有预定颜色的光。

6. 发明授权

US06432847B1 Method of activating P-type compound semiconductor by using lasers for reducing the resistivity thereof 失效
标题翻译：通过使用激光降低其电阻率来激活P型化合物半导体的方法
公开(公告)号：US06432847B1
公开(公告)日：2002-08-13
申请号：US09587211
申请日：2000-06-01
申请人： Jian-Shihn Tsang , Wen-Chung Tsai , Tsung-Yu Chen , Chia-Hung Hsu , Wei-Chih Lai
发明人： Jian-Shihn Tsang , Wen-Chung Tsai , Tsung-Yu Chen , Chia-Hung Hsu , Wei-Chih Lai
IPC分类号： H01L2126
CPC分类号： H01L21/3245 , H01L21/268
摘要： A novel method of using lasers for generating driving energy for activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. The present invention can be carried out in the ambience of atmosphere rather than in the ambience of nitrogen gas. In addition, adjusting the power and focusing distance of a laser source, and the power density can change the time required by the activating process.
摘要翻译：一种使用激光器产生用于激活P型化合物半导体膜的驱动能并降低其电阻率的新颖方法。 P型化合物半导体膜由掺杂有P型杂质的III-V族氮化物或II-VI族化合物制成。本发明可以在大气环境中进行，而不是在氮气氛下进行。此外，调整激光源的功率和聚焦距离，并且功率密度可以改变激活过程所需的时间。

7. 发明授权

US06380052B1 Method of activating P-type compound semiconductor for reducing the resistivity thereof 失效
标题翻译：激活P型化合物半导体以降低其电阻率的方法
公开(公告)号：US06380052B1
公开(公告)日：2002-04-30
申请号：US09583806
申请日：2000-05-30
申请人： Jian-Shihn Tsang , Wen-Chung Tsai , Wei-Chih Lai , Tsung-Yu Chen
发明人： Jian-Shihn Tsang , Wen-Chung Tsai , Wei-Chih Lai , Tsung-Yu Chen
IPC分类号： H01L2120
CPC分类号： H01L21/3245 , H01L21/477
摘要： A novel method of using rapid variation of temperature for generating driving energy to activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. In addition, the time duration when the ambient temperature is greater than a certain temperature during the annealing process is limited to be less than one minute. Therefore, the optoelectronic performance of the P-type compound semiconductor films will not degrade because the duration of annealing process is decreased.
摘要翻译：使用快速变化的温度来产生驱动能量以激活P型化合物半导体膜并降低其电阻率的新方法。 P型化合物半导体膜由掺杂有P型杂质的III-V族氮化物或II-VI族化合物制成。此外，在退火过程中环境温度大于一定温度的持续时间被限制为小于1分钟。因此，由于退火工艺的持续时间降低，P型化合物半导体膜的光电性能不会降低。

8. 发明授权

US08587009B2 Light emitting chip package 失效
标题翻译：发光芯片封装
公开(公告)号：US08587009B2
公开(公告)日：2013-11-19
申请号：US13306818
申请日：2011-11-29
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L33/486 , H01L33/52 , H01L33/642 , H01L2224/48091 , H01L2933/005 , H01L2924/00014
摘要： A light emitting chip package includes a substrate, an insulation layer, a patterned electric conductive layer, a light emitting chip, an encapsulation, a plurality of thermal conductors and electrical conductors. The insulation layer is formed on a top surface of the substrate. The patterned electric conductive layer partially covers the insulation layer. The light emitting chip is arranged on the electric conductive layer. The encapsulation covers the light emitting chip and the electric conductive layer. The plurality of thermal conductors is formed at a bottom surface side of the substrate. The plurality of electrical conductors penetrates the insulation layer and connects the conductive layer with the thermal conductor. The plurality of electrical conductors is isolated from each other.
摘要翻译：发光芯片封装包括基板，绝缘层，图案化导电层，发光芯片，封装，多个热导体和电导体。绝缘层形成在基板的顶表面上。图案化导电层部分地覆盖绝缘层。发光芯片布置在导电层上。封装覆盖发光芯片和导电层。多个热导体形成在基板的底面侧。多个电导体穿过绝缘层并将导电层与热导体连接。多个电导体彼此隔离。

9. 发明授权

US08558261B2 Light emitting chip and method for manufacturing the same 失效
标题翻译：发光芯片及其制造方法
公开(公告)号：US08558261B2
公开(公告)日：2013-10-15
申请号：US12982910
申请日：2010-12-31
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L33/00
CPC分类号： H01L33/641 , H01L33/42 , H01L2933/0075
摘要： A light emitting chip includes a substrate, a heat conducting layer formed on the substrate, a protective layer formed on the heat conducting layer, a light emitting structure and a connecting layer connecting the protective layer with the light emitting structure. The heat conducting layer includes a plurality of horizontally grown carbon nanotube islands. The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A first transparent conductive layer and a current conducting layer are sandwiched between the first semiconductor layer and the connecting layer. A second transparent conductive layer is formed on the second semiconductor layer.
摘要翻译：发光芯片包括基板，形成在基板上的导热层，形成在导热层上的保护层，发光结构和连接保护层与发光结构的连接层。导热层包括多个水平生长的碳纳米管岛。发光结构包括第一半导体层，发光层和第二半导体层。第一透明导电层和导电层夹在第一半导体层和连接层之间。在第二半导体层上形成第二透明导电层。

10. 发明授权

US08461599B2 Light emitting diode with a stable color temperature 失效
标题翻译：具有稳定色温的发光二极管
公开(公告)号：US08461599B2
公开(公告)日：2013-06-11
申请号：US13102056
申请日：2011-05-06
申请人： Jian-Shihn Tsang
发明人： Jian-Shihn Tsang
IPC分类号： H01L27/15
CPC分类号： H05B33/0869 , H01L25/167 , H01L31/153 , H01L2924/0002 , H01L2924/00
摘要： A light emitting diode (LED) with a stable color temperature includes at least one LED chip and at least one color sensor module. The LED chip has a main light emitting surface and a sub light emitting surface opposite to the main surface. The color sensor module senses the intensities of light emitting from sub light emitting surface of the LED chip for adjustment of a color temperature of the LED.
摘要翻译：具有稳定色温的发光二极管（LED）包括至少一个LED芯片和至少一个颜色传感器模块。 LED芯片具有与主表面相对的主发光表面和副发光表面。颜色传感器模块感测从LED芯片的副发光表面发射的光的强度，用于调节LED的色温。

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