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    • 1. 发明申请
    • MECHANICAL QUANTITY MEASURING DEVICE, SEMICONDUCTOR DEVICE, EXFOLIATION DETECTING DEVICE, AND MODULE
    • 机械量子测量装置,半导体器件,检测装置和模块
    • US20140042566A1
    • 2014-02-13
    • US14112626
    • 2011-04-21
    • Hiroyuki OtaKisho AshidaKentaro Miyajima
    • Hiroyuki OtaKisho AshidaKentaro Miyajima
    • H01L41/04
    • H01L41/04G01B7/18G01L1/2206G01L1/2293G01M5/0033G01M5/0083
    • A mechanical quantity measuring device (100) includes a semiconductor substrate (1) attached to a measured object so as to indirectly measure the mechanical quantity acting on the measured object; a measuring portion (7) capable of measuring a mechanical quantity acting on the semiconductor substrate (1) at a central part (1c) of the semiconductor substrate (1); and plural impurity diffused resistors (3a, 3b, 4a, 4b) forming a group (5) gathering closely to each other in at least one place, on an outer peripheral part (1e) outside the central part (1c) of the semiconductor substrate (1). The plural impurity diffused resistors (3a, 3b, 4a, 4b) forming one of the group (5) are connected to each other to form a Wheatstone bridge (2a, 2b). Thus, the mechanical quantity measuring device (100) can securely detect its own exfoliation.
    • 机械量测量装置(100)包括安装在测量对象上的半导体衬底(1),以间接地测量作用在测量对象上的机械量; 能够测量在半导体衬底(1)的中心部分(1c)处作用在半导体衬底(1)上的机械量的测量部分(7); 以及在半导体基板的中心部分(1c)的外侧的外周部(1e)上形成形成在至少一个位置上彼此紧密聚集的组(5)的多个杂质扩散电阻器(3a,3b,4a,4b) (1)。 形成组(5)中的一个的多个杂质扩散电阻器(3a,3b,4a,4b)彼此连接以形成惠斯通电桥(2a,2b)。 因此,机械量测量装置(100)可以安全地检测其自身的剥离。
    • 3. 发明授权
    • Semiconductor device with shallow trench isolation and its manufacture method
    • 具有浅沟槽隔离的半导体器件及其制造方法
    • US07626234B2
    • 2009-12-01
    • US11429962
    • 2006-05-09
    • Kengo InoueHiroyuki Ota
    • Kengo InoueHiroyuki Ota
    • H01L29/76
    • H01L21/76232H01L21/31053H01L21/31111H01L21/823878H01L29/7833
    • A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.
    • 半导体器件制造方法包括以下步骤:(a)在半导体衬底的表面上形成用于化学机械抛光的阻挡层; (b)在所述阻挡层和半导体衬底中形成元件隔离沟槽; (c)沉积覆盖所述沟槽的内表面的氮化物膜; (d)通过高密度等离子体CVD沉积第一氧化物膜,第一氧化膜埋入沉积有氮化物膜的沟槽的至少下部; (e)通过稀氢氟酸在沟槽的侧壁上洗出第一氧化膜; (f)通过高密度等离子体CVD沉积第二氧化膜,第二氧化膜在洗出之后埋入沟槽; 和(g)通过化学机械抛光去除阻挡层上的氧化物膜。
    • 8. 发明授权
    • Method of manufacturing a nitride semiconductor laser with a plated auxiliary metal substrate
    • 用镀覆辅助金属基板制造氮化物半导体激光器的方法
    • US06677173B2
    • 2004-01-13
    • US09818941
    • 2001-03-28
    • Hiroyuki Ota
    • Hiroyuki Ota
    • H01L2100
    • H01S5/32341H01S5/0202H01S5/0425
    • The disclosure is a method of manufacturing a nitride semiconductor laser wherein a plurality of crystal layers made of group III nitride semiconductors, including an active layer, are successively stacked on an underlayer. The method includes the steps of forming the plurality of crystal layers on the underlayer formed on a substrate, forming an electrode layer on the outermost surface of the crystal layers, plating a metal film onto the electrode layer, irradiating an interface between the substrate and the underlayer with light through the substrate toward so as to form a region of decomposed substances of the nitride semiconductor, delaminating the underlayer that supports the crystal layers from the substrate along the decomposed substance region, and cleaving the underlayer with the crystal layers so as to form cleaved planes constituting a laser resonator.
    • 本公开是一种制造氮化物半导体激光器的方法,其中由包括活性层的III族氮化物半导体制成的多个晶体层依次层叠在底层上。 该方法包括以下步骤:在形成在基板上的下层上形成多个晶体层,在晶体层的最外表面上形成电极层,将金属膜电镀在电极层上,照射基板与 通过衬底的光线穿过衬底,以形成氮化物半导体的分解物质的区域,沿着分解物质区域从衬底分层支撑晶体层的底层,并且用晶体层切割底层以形成 构成激光谐振器的解理平面。
    • 10. 发明授权
    • Variable optical element, a pickup apparatus having the variable optical element, and an information recording and reproducing apparatus having the pickup apparatus
    • 可变光学元件,具有可变光学元件的拾取装置,以及具有拾取装置的信息记录和重放装置
    • US06628599B2
    • 2003-09-30
    • US09739646
    • 2000-12-20
    • Takanori MaedaHiroyuki Ota
    • Takanori MaedaHiroyuki Ota
    • G11B700
    • G11B7/1353G02B5/1828
    • An information recording/reproducing apparatus of the invention is equipped with an objective lens, a light source and a variable optical element having a grating which demonstrates a piezo-electric effect by means of an electric field. The light source emits and irradiates a laser beam onto the grating to generate a 0th order diffraction beam and +/− 1st order diffraction beams in accordance with first order diffraction efficiency, and the objective lens converges the 0th diffraction beam and +/− 1st order diffraction beams which are irradiated onto an information recording medium for the purpose of information recording or information reproducing. By controlling an electric field applied to the grating, the first order diffraction efficiency of the grating is adjusted, whereby light beams are generated which have power levels appropriate for various kinds of information recording media.
    • 本发明的信息记录/再现装置配有物镜,光源和具有通过电场显示压电效应的光栅的可变光学元件。 光源发射并将光束照射到光栅上,以根据一阶衍射效率产生第0级衍射光束和+/- 1级衍射光束,并且物镜会聚第0衍射光束和+/- 1阶 用于信息记录或信息再现的辐射到信息记录介质上的衍射光束。 通过控制施加到光栅的电场,调整光栅的一阶衍射效率,从而产生具有适用于各种信息记录介质的功率电平的光束。