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1. 发明申请

US20110014858A1 GROOVED CMP POLISHING PAD 审中-公开
标题翻译：抛光CMP抛光垫
公开(公告)号：US20110014858A1
公开(公告)日：2011-01-20
申请号：US12837705
申请日：2010-07-16
申请人： Ching-Ming TSAI , Fred Sun , Sheng-Huan Liu , Jia-Cheng Hsu , Ananth Naman , Hao-Kuang Chiu , Dinesh Khanna
发明人： Ching-Ming TSAI , Fred Sun , Sheng-Huan Liu , Jia-Cheng Hsu , Ananth Naman , Hao-Kuang Chiu , Dinesh Khanna
IPC分类号： B24D11/00
CPC分类号： B24B37/26
摘要： The present invention provides polishing pads for use in CMP processes. In one embodiment, a pad comprises a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least about 10 mil and a width, WG, with any two adjacent grooves being separated from each other a landing surface having a width, WL, wherein the quotient WL/WG is less than or equal to 3. In a preferred embodiment, the surface of the pad defines a series of concentric substantially circular grooves. In an alternative embodiment, the surface of the pad defines a spiral groove having a depth of at least about 10 mil and a width WG, and a spiral landing surface outlining spiral groove the having a width, WL, wherein the spiral landing surface defines a substantially coplanar polishing surface and the quotient WL/WG is less than or equal to 3.
摘要翻译：本发明提供了用于CMP工艺的抛光垫。在一个实施例中，垫包括限定具有分离凹槽的着陆表面的多个凹槽的表面，所述着陆表面一起限定基本上共面的抛光表面，每个凹槽具有至少约10密耳的深度和宽度WG，任何两个相邻的凹槽彼此分开具有宽度WL的着陆表面，其中商WL / WG小于或等于3.在优选实施例中，垫的表面限定了一系列同心的大致圆形的凹槽。在替代实施例中，垫的表面限定具有至少约10密耳深度和宽度WG的螺旋槽，以及螺旋着陆表面，其具有宽度为WL的螺旋槽，其中螺旋着陆表面限定了基本上共面的抛光表面和商WL / WG小于或等于3。

2. 发明申请

US20060278614A1 Polishing composition and method for defect improvement by reduced particle stiction on copper surface 审中-公开
标题翻译：通过减少铜表面的粒子沉积来改善缺陷的抛光组合物和方法
公开(公告)号：US20060278614A1
公开(公告)日：2006-12-14
申请号：US11147531
申请日：2005-06-08
申请人： Yuchun Wang , Fred Sun , Joseph Hawkins
发明人： Yuchun Wang , Fred Sun , Joseph Hawkins
IPC分类号： C09K13/00 , C09K13/06 , B44C1/22 , C03C25/68
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical-mechanical polishing composition comprising abrasive particles, a hydroxyquinoline, and a diamine compound comprising an ether group, and a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
摘要翻译：包含研磨颗粒，羟基喹啉和包含醚基团的二胺化合物的化学机械抛光组合物，以及用上述抛光组合物对基材进行化学机械抛光的方法。

3. 发明申请

US20070190789A1 Compositions and methods for CMP of indium tin oxide surfaces 审中-公开
标题翻译：氧化铟锡表面CMP的组成和方法
公开(公告)号：US20070190789A1
公开(公告)日：2007-08-16
申请号：US11706929
申请日：2007-02-14
申请人： Phillip Carter , Nevin Naguib , Fred Sun
发明人： Phillip Carter , Nevin Naguib , Fred Sun
IPC分类号： H01L21/461 , C03C15/00
CPC分类号： H01L31/1884 , C09G1/02 , C09K3/1463 , H01L51/442 , H01L51/5206 , Y02E10/50
摘要： The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing an ITO surface. The compositions of the invention comprise a particulate zirconium oxide or colloidal silica abrasive, which has a mean particle size of not more than about 150 nm, suspended in an aqueous carrier, which preferably has a pH of not more than about 5. Preferably, the abrasive has a surface area in the range of about 40 to about 220 m2/g. The CMP compositions of the invention provide an acceptably low surface roughness when used to polish an ITO surface, providing clean and uniform surfaces.
摘要翻译：本发明提供化学机械抛光（CMP）组合物和抛光ITO表面的方法。本发明的组合物包含悬浮在水性载体中的平均粒径不超过约150nm的颗粒状氧化锆或胶体二氧化硅磨料，其优选具有不超过约5的pH。优选地，研磨剂的表面积在约40至约220平方米/克的范围内。当用于抛光ITO表面时，本发明的CMP组合物提供可接受的低表面粗糙度，提供清洁且均匀的表面。

4. 发明授权

US07021993B2 Method of polishing a substrate with a polishing system containing conducting polymer 失效
标题翻译：用含有导电聚合物的抛光系统抛光基材的方法
公开(公告)号：US07021993B2
公开(公告)日：2006-04-04
申请号：US10198841
申请日：2002-07-19
申请人： Jian Zhang , Fred Sun , Shumin Wang , Isaac K. Cherian , Eric H. Klingenberg
发明人： Jian Zhang , Fred Sun , Shumin Wang , Isaac K. Cherian , Eric H. Klingenberg
IPC分类号： B24B1/00
CPC分类号： C09K3/1463 , B24B37/00 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising (i) contacting a substrate with a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10−10 S/cm to about 106 S/cm, and (c) a liquid carrier, and (ii) abrading or removing at least a portion of the substrate to polish the substrate.
摘要翻译：本发明提供一种抛光衬底的方法，其包括（i）使衬底与抛光系统接触，所述抛光系统包括（a）研磨剂，抛光垫，用于氧化衬底的装置或其任何组合，（b）导电聚合物，其具有约10 -6 S / cm至约10 -6 S / cm的电导率，和（c）液体载体，和（ii）至少研磨或除去衬底的一部分以抛光衬底。

5. 发明申请

US20050150598A1 Polishing system comprising a highly branched polymer 有权
标题翻译：抛光体系包含高支化聚合物
公开(公告)号：US20050150598A1
公开(公告)日：2005-07-14
申请号：US10755154
申请日：2004-01-09
申请人： Kevin Moeggenborg , Fred Sun
发明人： Kevin Moeggenborg , Fred Sun
IPC分类号： C09G1/00 , C09G1/02 , B44C1/22
CPC分类号： C09G1/02
摘要： The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof.
摘要翻译：本发明提供了一种抛光系统及其使用方法，包括（a）液体载体，（b）具有约50％或更大分支度的聚合物，和（c）抛光垫，研磨剂或组合其中。

6. 发明授权

US06811474B2 Polishing composition containing conducting polymer 有权
公开(公告)号：US06811474B2
公开(公告)日：2004-11-02
申请号：US10199704
申请日：2002-07-19
申请人： Isaac K. Cherian , Jian Zhang , Fred Sun , Shumin Wang , Eric H. Klingenberg
发明人： Isaac K. Cherian , Jian Zhang , Fred Sun , Shumin Wang , Eric H. Klingenberg
IPC分类号： B24B500
CPC分类号： C09G1/02 , H01L21/3212 , H01L21/32134
摘要： The invention provides a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivity of about 10−10 S/cm to about 106 S/cm, and (c) a liquid carrier.

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