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1. 发明授权

US4181913A Resistive electrode amorphous semiconductor negative resistance device 失效
标题翻译：电阻非晶半导体负电阻器件
公开(公告)号：US4181913A
公开(公告)日：1980-01-01
申请号：US801959
申请日：1977-05-31
申请人： David D. Thornburg
发明人： David D. Thornburg
IPC分类号： H01L45/00
CPC分类号： H01L45/00
摘要： Semiconductor devices which exhibit negative differential resistance and comprise a semiconductor material in contact with an electrode and a resistive film layer, preferably comprising an alloy of nickel and chrome is disclosed. The slope of the negative resistance region and the current filament area can be varied by altering the sheet resistivity of the resistive film layer. This allows the semiconductor device to be incorporated in a single monolithic thin film integrated circuit in which the thickness of the semiconductor layer utilized in the integrated circuit is constant. A method for fabricating the aforementioned semiconductor device is also disclosed.
摘要翻译：公开了具有负的差分电阻并且包括与电极和电阻膜层接触的半导体材料的半导体器件，优选地包括镍和铬的合金。可以通过改变电阻膜层的电阻率来改变负电阻区域和当前灯丝区域的斜率。这允许将半导体器件结合到集成电路中使用的半导体层的厚度恒定的单个单片薄膜集成电路中。还公开了制造上述半导体器件的方法。

2. 发明授权

US3987311A Shift register utilizing amorphous semiconductor threshold switches 失效
标题翻译：移位寄存器利用非晶半导体阈值开关
公开(公告)号：US3987311A
公开(公告)日：1976-10-19
申请号：US572487
申请日：1975-04-25
申请人： David D. Thornburg
发明人： David D. Thornburg
IPC分类号： G11C11/39 , G11C19/28
CPC分类号： G11C11/39 , G11C19/28
摘要： A shift register that utilizes a plurality of amorphous semiconductor threshold switches. The shift register is driven by a two phase clock with odd-numbered threshold switches being supplied a pulse waveform of one phase and even-numbered threshold switches being supplied a pulse waveform of a different phase. The threshold switches have a V-I characteristic that is strongly temperature dependent and each is heated by a heating element which can take the form of an amorphous semiconductor current controlled negative differential resistance device, with the current controlled negative differential resistance devices and the threshold switches fabricated simultaneously on a common substrate.
摘要翻译：利用多个非晶半导体阈值开关的移位寄存器。移位寄存器由两相时钟驱动，奇数阈值开关被提供一相的脉冲波形，并且偶数阈值开关被提供为不同相位的脉冲波形。阈值开关具有强烈的温度依赖性的VI特性，并且每个都由加热元件加热，加热元件可以采取非晶半导体电流控制的负差分电阻器件的形式，同时电流控制的负差分电阻器件和阈值开关同时制造在共同的基底上。

3. 发明授权

US4288836A Capacitance controlled keyswitch 失效
标题翻译：电容控制钥匙开关
公开(公告)号：US4288836A
公开(公告)日：1981-09-08
申请号：US43519
申请日：1979-05-29
申请人： David D. Thornburg , Brian Rosen
发明人： David D. Thornburg , Brian Rosen
IPC分类号： H03K17/975 , H01G5/16
CPC分类号： H03K17/975
摘要： A tri-state capacitance controlled keyswitch having a deformable concave electrode moveable by means of an actuator toward and away from a pair of capacitor plates underlying a dielectric layer in order to change the capacitive coupling between the capacitor plates. The electrode is normally remote from the dielectric layer in a weak capacitance open circuit position, a first higher capacitance closed circuit position exists when the electrode is undeformed and is in contact with the dielectric layer, and a second highest capacitance closed circuit position exists when the electrode is deformed and is in contact with the dielectric layer.
摘要翻译：一种三态电容控制钥匙开关，具有可变形的凹电极，借助致动器可以朝向和远离电介质层下方的一对电容器板移动，以改变电容器板之间的电容耦合。电极通常在弱电容开路位置远离电介质层，当电极未变形并与电介质层接触时，存在第一较高电容闭合位置，当存在第二高电容闭路位置时电极变形并与电介质层接触。

4. 发明授权

US4162538A Thin film programmable read-only memory having transposable input and output lines 失效
标题翻译：具有可转位输入和输出线的薄膜可编程只读存储器
公开(公告)号：US4162538A
公开(公告)日：1979-07-24
申请号：US819310
申请日：1977-07-27
申请人： David D. Thornburg
发明人： David D. Thornburg
IPC分类号： G11C16/02 , G11C17/16 , H01L23/525 , G11C17/00 , G11C11/34
CPC分类号： G11C13/0004 , G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/3011
摘要： A thin film programmable read-only memory is provided which comprises an X-Y matrix of conductors, the cross points of which are connected together by a switch element comprising a current-controlled negative differential resistance (CNDR) device in series with a semiconductor fuse. At low bias levels corresponding to read signals, the element behaves as a non-linear resistance. At large bias levels corresponding to write signals, the element will be driven to its negative differential resistance characteristic, the switching element becoming a permanent open circuit when the fuse blows. The symmetrical switching characteristics of the CNDR device allows the function of the X conductors (input or address lines) and Y conductors (output or word lines) to be transposed in that the address information can be applied to the Y lines, the output appearing at the X lines.In an alternate embodiment, a threshold switching (TS) device is utilized in place of the CNDR device.The current characteristics of the CNDR and TS devices are such that the fuse is blown rapidly and cleanly when the devices are appropriately biased.
摘要翻译：提供了薄膜可编程只读存储器，其包括导体的X-Y矩阵，其交叉点由包括与半导体熔丝串联的电流控制负差分电阻（CNDR）器件的开关元件连接在一起。在对应于读取信号的低偏置电平下，元件表现为非线性电阻。在对应于写入信号的较大偏置电平下，元件将被驱动到其负的差分电阻特性，当保险丝熔断时，开关元件变为永久性开路。 CNDR器件的对称开关特性允许X导体（输入或地址线）和Y导体（输出或字线）的功能被转置，因为地址信息可以应用于Y线，输出出现在 X线。

5. 发明授权

US4126824A Progressively shorted tapered resistance device 失效
标题翻译：逐渐缩短的锥形电阻器件
公开(公告)号：US4126824A
公开(公告)日：1978-11-21
申请号：US789392
申请日：1977-04-21
申请人： David D. Thornburg , Roy J. Lahr
发明人： David D. Thornburg , Roy J. Lahr
IPC分类号： H01C1/084 , H01C7/20 , H01P1/22 , G01R27/02
CPC分类号： H01C7/20 , H01C1/084 , H01P1/227
摘要： A progressively shorted tapered resistance device including a body of material which undergoes an irreversible resistance decrease when heated beyond a threshold temperature in operative association with a tapered electrical resistance element which develops a non-uniform temperature profile when electrically energized. Upon sufficient energization, the tapered resistor element will cause portions of the heat sensitive material to be heated beyond its threshold temperature resulting in a shorting out of a portion of the tapered resistance element. The amount of the tapered resistance element shorted out is measured at low currents to provide an indication of the energizing current.
摘要翻译：一种逐渐缩短的锥形阻力装置，其包括当被加热超过阈值温度时经历不可逆电阻降低的材料体，其与当电通电时产生不均匀温度分布的锥形电阻元件可操作地相关联。在足够的通电时，锥形电阻元件将导致热敏材料的一部分被加热超过其阈值温度，导致锥形电阻元件的一部分短路。在低电流下测量短路的锥形电阻元件的量以提供通电电流的指示。

6. 发明授权

US4099071A Monolithic electronic scanning device 失效
标题翻译：单片电子扫描装置
公开(公告)号：US4099071A
公开(公告)日：1978-07-04
申请号：US747123
申请日：1976-12-03
申请人： David D. Thornburg
发明人： David D. Thornburg
IPC分类号： H03K5/15 , H03K17/94 , H03K19/00 , H03K19/21 , H03K17/00 , G01R21/02 , H01C3/08 , H03K19/32
CPC分类号： H03K5/1506 , H03K17/94 , H03K19/00 , H03K19/21
摘要： A tapered resistor heating element is provided which sequentially heats and actuates in a controlled fashion heat sensitive media. In one embodiment a tapered resistor heating element sequentially heats in a controlled fashion heat sensitive switches. Heat sensitive resistors and heat sensitive threshold switches may also be employed in this configuration. This system may be utilized as a meter relay or as described in another embodiment as a scanner. Novel exclusive OR gates are also disclosed which are employed in one embodiment of the scanner of the instant invention.BACKGROUND OF THE INVENTIONThis invention relates generally to scanning devices and more specifically to monolithic electronic scanning devices.It is known that a major problem with matrix addressed displays and the like is the requirement for numerous connections in their implementation between the matrix elements and the ancillary addressing and driving devices. For instance, a display panel with 10.sup.6 matrix elements requires about 2.times.10.sup.3 connections in order to be properly implemented. For devices which are raster scanned, the number of external connections can be greatly reduced provided that the scanning electronics are located on the matrix device panel itself. Such devices, however, are not well known in the art since simple, economical and radically new technologies have not been developed which would effectively allow the production of such devices.Now with the advent of tapered resistor technology more specifically defined in U.S. Ser. No. 747,167, entitled Tapered Resistor Device and filed concurrently herewith which is hereby respectfully incorporated by reference, such novel devices are possible with novel applications of such technology. In the instant recited application, a device is described comprising a tapered resistor element which develops a non-uniform temperature profile on electrical energization which is interacted after being energized with selected heat sensitive media to provide a number of very useful effects and devices which may be employed in a great many applications with ease, simplicity and greater economy than heretofore possible including the scanning apparatus of the instant invention.Generally described therein a conventional resistive device is seen to be a resistive film having a uniform thickness which has been formed into a resistor of a specified width and length. This film is then placed on an insulating substrate which is bonded to a heat sink. When an electrical current I is passed through the resistor the production of Joule heat causes a steady state temperature above ambient .DELTA.T which, if thermal fringing effects are neglected, may be theoretically defined by the relationship ##EQU1## IN WHICH D.sub.S AND K.sub.s are respectively the thickness and thermal conductivity of the substrate and .rho..sub.s is the sheet resistivity of the resistive material measured in ohms/square. (Note: .rho..sub.2 =.rho./d where .rho. is the bulk resistivity of the resistive material.) It is readily seen from this illustration that since the width of the resistor is uniform the local power dissipation and hence the temperature rise is also uniform so that no temperature gradient is established and the unique and utilizable effect of the device of the instant invention is not realized.However, as is seen in FIG. 2 of U.S. Ser. No. 747,167, a device may be provided including a resistive film which significantly has a varying width in the horizontal plane while the thickness remains uniform. This film may be placed on an insulating substrate 2 which in turn is bonded to a heat sink 3. Now it is seen that the width of the resistive element 1 is a monotonically increasing function of position along the length of the element or, in simple terms, the resistive element is tapered. In the event the slope of the taper is gradual over distances comparable with the substrate thickness, equation 1 recited above will still be applicable for a first approximation. When a tapered resistor is energized the local power generation will vary along the length of the resistor so that points of prescribed temperature rise can be made to move along the tapered resistor by varying the current flowing through the device.Although the non-uniformity of the width of the resistive film 1 may vary in any suitable fashion, it is assumed for purposes of this discussion that the taper is linear as is seen in FIG. 1 so that the following relationship is theoretically true:w=w.sub.o +bx .phi.

7. 发明授权

US3979586A Non-crystalline device memory array 失效
标题翻译：非晶体器件存储器阵列
公开(公告)号：US3979586A
公开(公告)日：1976-09-07
申请号：US530897
申请日：1974-12-09
申请人： David D. Thornburg
发明人： David D. Thornburg
IPC分类号： G11C13/00 , G11C11/39 , G11C13/04 , G11C16/02 , H01J39/12
CPC分类号： G11C13/0004 , G11C11/39 , G11C13/048 , H04N3/1506 , Y10T307/773
摘要： An erasable optical memory array having at each storage location a non-crystalline, semiconductor threshold switching device. The threshold voltage of each switching device is strongly temperature dependent and each switching device has a finite recovery time when switched to its low resistance state. Means are provided for periodically sampling each of the switching devices with voltage pulses repetitive at a first frequency and having a first voltage level sufficient to switch to the low resistance state only those switching devices heated above room temperature by a thermal image. Additional means are provided to sample the switching devices at a second frequency greater than the first frequency and at a voltage level less than that of the first voltage level to maintain the switched devices in the low resistance state upon removal of the thermal image.
摘要翻译：一种在每个存储位置处具有非晶体半导体阈值切换装置的可擦除光学存储器阵列。每个开关器件的阈值电压是强烈的温度依赖性的，并且当切换到其低电阻状态时，每个开关器件具有有限的恢复时间。提供了用于以第一频率重复的电压脉冲对每个开关装置进行周期性采样的装置，并且具有足以仅通过热图像将那些被加热到室温以上的开关装置切换到低电阻状态的第一电压电平。提供附加装置以大于第一频率的第二频率和小于第一电压电平的电压电平对开关装置进行采样，以在去除热图像时保持开关装置处于低电阻状态。

8. 发明授权

US3975755A Stable non-crystalline material for switching devices 失效
标题翻译：稳定的非晶材料用于开关器件
公开(公告)号：US3975755A
公开(公告)日：1976-08-17
申请号：US558993
申请日：1975-03-17
申请人： David D. Thornburg
发明人： David D. Thornburg
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/1625 , Y10S257/912
摘要： A switching device having as the active switching element a material with a band gap between 0.6 and 1.2 eV and a mean coordination number of 4. These parameters provide a material having a glass transition temperature that is relatively high such that the material is resistant to devitrification. Amorphous (a-) CdAs.sub.2 is the most promising active switching material having the parameters, and a method of making thin films of a-CdAs.sub.2 by open source evaporation is disclosed.
摘要翻译：具有作为有源开关元件的开关器件是带隙在0.6和1.2eV之间的材料，平均配位数为4.这些参数提供了具有相对较高的玻璃化转变温度的材料，使得该材料耐失透。无定形（a-）CdAs2是具有参数的最有希望的有源开关材料，并且公开了通过开源蒸发制备a-CdAs2的薄膜的方法。

9. 发明授权

US3956042A Selective etchants for thin film devices 失效
标题翻译：用于薄膜器件的选择性蚀刻剂
公开(公告)号：US3956042A
公开(公告)日：1976-05-11
申请号：US521591
申请日：1974-11-07
申请人： David D. Thornburg , Richard I. Johnson
发明人： David D. Thornburg , Richard I. Johnson
IPC分类号： H01L21/00 , H01L45/00 , H01L21/12
CPC分类号： H01L45/1675 , H01L21/00 , H01L45/00 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/141 , H01L45/144 , H01L45/1625 , Y10S438/90
摘要： A method of making thin film devices with selective etchants. Specifically, a fabrication process in accordance with the invention provides for the manufacture of amorphous chalcogenide sandwich structures. Such structures consist of a glass substrate, a chromium or aluminum electrode on the substrate bounding one side of the chalcogenide layer, and a second electrode of aluminum bounding the other side of the chalcogenide layer. First, the aluminum electrode is etched without affecting the other layers. Secondly, the chalcogenide layer is etched with a solution which attacks only the chalcogenide material and neither the overlying aluminum nor the underlying chromium or aluminum electrode. This two-step process is particularly suitable for fabricating current controlled negative differential resistance devices which requires the precise registration of one of the electrodes with the boundary of the chalcogenide such that a coextensive boundary is achieved.
摘要翻译：制造具有选择性蚀刻剂的薄膜器件的方法。具体地说，根据本发明的制造方法提供了无定型硫属元素夹心结构的制造。这样的结构由玻璃基板，位于硫属化物层的一侧上的基板上的铬或铝电极和界定硫族化物层的另一侧的铝的第二电极组成。首先，蚀刻铝电极而不影响其他层。其次，用仅侵蚀硫族化物材料的溶液蚀刻硫族化物层，也不用上覆铝和下面的铬或铝电极。该两步法特别适用于制造电流控制的负差动电阻器件，其需要将电极中的一个与硫族化物的边界精确配准，使得达到共同延伸的边界。

10. 发明授权

US3953708A Thermal printer using amorphous semiconductor devices 失效
标题翻译：使用非晶半导体器件的热敏打印机
公开(公告)号：US3953708A
公开(公告)日：1976-04-27
申请号：US572486
申请日：1975-04-25
申请人： David D. Thornburg
发明人： David D. Thornburg
IPC分类号： B41J2/34 , G01D15/10 , H05B1/00
CPC分类号： G01D15/10 , B41J2/34
摘要： A thermal printer comprised of a shift register, a line buffer and a plurality of printheads in heat-transfer relationship with a heat-sensitive record medium. The shift register and line buffer are comprised of a plurality of stages or modules with each module having an amorphous semiconductor heating element that exhibits current controlled negative differential resistance in heat-transfer proximity to a heat-gated amorphous semiconductor threshold switch which has a V-I characteristic which is strongly temperature dependent. The printheads are comprised of the amorphous semiconductor heating elements. Data is stored in the shift register by means of a video data signal and two oppositely phased clock signals of an amplitude that will only bias a heated threshold switch to conduction, with transfer of data to the line buffer being achieved in a parallel format by a third properly phased clock signal. The data in the line buffer is transferred in parallel to the printheads which generate heat uniformly when in their low resistance state to thereby provide marking of the heat-sensitive record medium.
摘要翻译：一种热敏打印机，包括移位寄存器，行缓冲器和与热敏记录介质传热关系的多个打印头。移位寄存器和行缓冲器由多个级或模块组成，每个模块具有非晶半导体加热元件，该非晶半导体加热元件在热传递接近于具有VI特性的热门式非晶半导体阈值开关的表面具有电流控制的负差分电阻这是强烈的温度依赖性。打印头由非晶半导体加热元件组成。数据通过视频数据信号和两个相反相位的时钟信号存储在移位寄存器中，该时钟信号的幅度将仅将加热的阈值开关偏置为导通，而数据传输到线缓冲器是以并行格式由第三个正确定时时钟信号。行缓冲器中的数据被并行传送到在低电阻状态下均匀产生热量的打印头，从而提供热敏记录介质的标记。

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