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1. 发明申请

US20090164831A1 Controlled Default OTP Settings for ASICs 审中-公开
标题翻译： ASIC的受控默认OTP设置
公开(公告)号：US20090164831A1
公开(公告)日：2009-06-25
申请号：US11959719
申请日：2007-12-19
申请人： Hemanth K. Birru , Clinton H. Holder, JR. , Kang W. Lee
发明人： Hemanth K. Birru , Clinton H. Holder, JR. , Kang W. Lee
IPC分类号： G06F1/08
CPC分类号： G06F21/76 , G06F12/1416 , Y02D10/13
摘要： An OTP and Reset Assert Counter and a method for protecting one-time programmable memory settings during read-out from an OTP memory block. The OTP memory block is set at ground and in a reset mode with a clock driven External Reset (RSTB) signal set at ground true active. A Delay Counter is programmed with a time delay to correspond with the time that is inherently needed by the OTP Memory block to complete a read-out process that begins with the External Reset (RSTB) signal being set to HIGH; and an input Clock signal is delayed by the Delay Counter for a duration of the time delay that begins with the External Reset (RSTB) signal being set to HIGH.
摘要翻译： OTP和复位Assert计数器以及在从OTP存储器块读取期间保护一次可编程存储器设置的方法。 OTP存储器模块设置在接地和复位模式，时钟驱动外部复位（RSTB）信号设置为接地真实有效。延迟计数器被编程为具有时间延迟以对应于OTP存储器块固有地需要的时间，以完成以外部复位（RSTB）信号设置为高开始的读出过程; 并且由外部复位（RSTB）信号设置为高电平开始的时间延迟的延迟计数器延迟输入时钟信号。

2. 发明申请

US20090146687A1 INTEGRATED CIRCUIT FEATURE DEFINITION USING ONE-TIME-PROGRAMMABLE (OTP) MEMORY 有权
标题翻译：集成电路特性使用一次性可编程（OTP）存储器定义
公开(公告)号：US20090146687A1
公开(公告)日：2009-06-11
申请号：US12372196
申请日：2009-02-17
申请人： James L. Archibald , Kang W. Lee , Clinton H. Holder, JR. , Edwin A. Muth , Kreg D. Ulery
发明人： James L. Archibald , Kang W. Lee , Clinton H. Holder, JR. , Edwin A. Muth , Kreg D. Ulery
IPC分类号： H03K19/173 , G11C17/00
CPC分类号： H03K19/1731
摘要： In one embodiment, a integrated circuit (IC) configurable to have any one of a plurality of different feature sets, the IC including (a) one or more feature blocks adapted to be independently enabled or disabled, (b) a one-time-programmable (OTP) memory cell for each feature block, the OTP memory cell storing a value, and (c) a feature control module for each feature block, each feature control module connected between the corresponding OTP memory cell and the corresponding feature block, and adapted to enable or disable the corresponding feature block based on the value stored in the corresponding OTP memory cell. The OTP memory cells are programmed by a vendor to select the particular feature set for the IC which is to be available to a purchaser.
摘要翻译：在一个实施例中，集成电路（IC）可配置为具有多个不同特征集合中的任何一个，所述IC包括（a）一个或多个适于被独立启用或禁用的特征块，（b）每个特征块的可编程（OTP）存储单元，OTP存储单元存储一个值，以及（c）每个特征块的特征控制模块，每个特征控制模块连接在相应的OTP存储单元和对应的特征块之间，以及适于基于存储在相应的OTP存储单元中的值来启用或禁用对应的特征块。 OTP存储器单元由供应商编程以选择用于购买者可用的IC的特定功能集。

3. 发明授权

US4649523A Semiconductor memory with boosted word line 失效
标题翻译：具有增强字线的半导体存储器
公开(公告)号：US4649523A
公开(公告)日：1987-03-10
申请号：US699661
申请日：1985-02-08
申请人： Clinton H. Holder, Jr. , Howard C. Kirsch , James H. Stefany
发明人： Clinton H. Holder, Jr. , Howard C. Kirsch , James H. Stefany
IPC分类号： G11C11/407 , G11C8/08 , G11C11/408 , G11C7/00
CPC分类号： G11C11/4085 , G11C8/08
摘要： A dynamic random access memory has a row conductor boosted in excess of the power supply level during an initial portion of a memory cycle. The voltage is then clamped at the supply level during the middle portion of the cycle, and optionally boosted again during the refresh portion. This allows improved performance and reliability, especially in memories employing bit lines precharged to one-half the power supply level.
摘要翻译：动态随机存取存储器在存储器周期的初始部分期间具有超过电源电平的行导体。然后在循环的中间部分期间将电压钳位在电源电平处，并且可选地在刷新部分期间增强电压。这允许改进的性能和可靠性，特别是在采用预充电到电源电量一半的位线的存储器中。

4. 发明授权

US4148711A Catalytic refining process for tank bottoms wax 失效
标题翻译：罐底蜡的催化精制工艺
公开(公告)号：US4148711A
公开(公告)日：1979-04-10
申请号：US812795
申请日：1977-07-05
申请人： Clinton H. Holder
发明人： Clinton H. Holder
IPC分类号： C10G73/44 , C10G43/02
CPC分类号： C10G73/44
摘要： High melting, deoiled and mildly deasphalted tank bottoms wax is catalytically refined in two stages using a catalyst comprising nickel molybdate on alumina. The first stage is maintained at a temperature at least about 50.degree. F. higher than the second stage and the temperature in the second stage is allowed to go no higher than about 575.degree. F. Hydrofined wax product from the second stage is recycled back into same and the temperature in the first stage is periodically increased in order to counteract deactivation of the catalyst. By using a judicious combination of process conditions, unrefined high melting tank bottoms microwax stocks can be made into high quality, high melting point microwax having excellent color and meeting FDA purity requirements.
摘要翻译：使用包含氧化钼上的钼酸镍的催化剂在两个阶段催化精炼高熔点，脱油和轻度脱沥青罐底部蜡。第一阶段保持在比第二阶段高至少约50°F的温度，第二阶段的温度不高于约575°F。来自第二阶段的加氢精制蜡产品被再循环回相同，并且周期性地增加第一阶段中的温度以抵消催化剂的失活。通过使用工艺条件的合理组合，未精制的高熔点底部微量油可以制成高品质，高熔点的微蜡，具有优异的颜色，符合FDA的纯度要求。

5. 发明授权

US07626845B2 Voltage programming switch for one-time-programmable (OTP) memories 有权
标题翻译：用于一次可编程（OTP）存储器的电压编程开关
公开(公告)号：US07626845B2
公开(公告)日：2009-12-01
申请号：US11610284
申请日：2006-12-13
申请人： Clinton H. Holder, Jr. , Kang W. Lee , Joseph E. Simko , Yehuda Smooha , Ying Zhu
发明人： Clinton H. Holder, Jr. , Kang W. Lee , Joseph E. Simko , Yehuda Smooha , Ying Zhu
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , G11C17/18
摘要： In one embodiment, the invention is an integrated circuit (IC) including an OTP memory and conditioning circuitry. The IC receives an externally-generated DC programming voltage signal that the conditioning circuitry transforms into a programming pulse signal for programming the OTP memory. The conditioning circuitry includes: (i) reset protection circuitry for holding the programming pulse signal low if the IC is powering up, (ii) an overvoltage protection circuit for substantially preventing the programming pulse voltage from exceeding predefined boundaries, and (iii) a conversion switch for controlling the programming pulse voltage. The programming pulse voltage is (i) substantially equivalent to the externally-generated DC voltage if an enable signal is on, and (ii) substantially equivalent to a reference voltage if the enable signal is off.
摘要翻译：在一个实施例中，本发明是包括OTP存储器和调节电路的集成电路（IC）。 IC接收外部产生的直流编程电压信号，调理电路变换为用于编程OTP存储器的编程脉冲信号。调节电路包括：（i）复位保护电路，用于在IC上电时保持编程脉冲信号为低电平，（ii）过压保护电路，用于基本上防止编程脉冲电压超出预定义的边界，以及（iii）转换用于控制编程脉冲电压的开关。如果使能信号为开，编程脉冲电压为（i）基本上等于外部产生的直流电压，以及（ii）如果使能信号关闭，则基本上等于参考电压。

6. 发明申请

US20080258757A1 INTEGRATED CIRCUIT FEATURE DEFINITION USING ONE-TIME-PROGRAMMABLE (OTP) MEMORY 有权
标题翻译：集成电路特性使用一次性可编程（OTP）存储器定义
公开(公告)号：US20080258757A1
公开(公告)日：2008-10-23
申请号：US11736208
申请日：2007-04-17
申请人： James L. Archibald , Clinton H. Holder , Kang W. Lee , Edwin A. Muth , Kreg D. Ulery
发明人： James L. Archibald , Clinton H. Holder , Kang W. Lee , Edwin A. Muth , Kreg D. Ulery
IPC分类号： H03K19/173
CPC分类号： H03K19/1731
摘要： In one embodiment, a integrated circuit (IC) configurable to have any one of a plurality of different feature sets, the IC including (a) one or more feature blocks adapted to be independently enabled or disabled, (b) a one-time-programmable (OTP) memory cell for each feature block, the OTP memory cell storing a value, and (c) a feature control module for each feature block, each feature control module connected between the corresponding OTP memory cell and the corresponding feature block, and adapted to enable or disable the corresponding feature block based on the value stored in the corresponding OTP memory cell. The OTP memory cells are programmed by a vendor to select the particular feature set for the IC which is to be available to a purchaser.
摘要翻译：在一个实施例中，集成电路（IC）可配置为具有多个不同特征集合中的任何一个，所述IC包括（a）一个或多个适于被独立启用或禁用的特征块，（b）每个特征块的可编程（OTP）存储单元，OTP存储单元存储一个值，以及（c）每个特征块的特征控制模块，每个特征控制模块连接在相应的OTP存储单元和对应的特征块之间，以及适于基于存储在相应的OTP存储单元中的值来启用或禁用对应的特征块。 OTP存储器单元由供应商编程以选择用于购买者的IC的特定功能集。

7. 发明授权

US07512028B2 Integrated circuit feature definition using one-time-programmable (OTP) memory 有权
标题翻译：使用一次可编程（OTP）存储器的集成电路特性定义
公开(公告)号：US07512028B2
公开(公告)日：2009-03-31
申请号：US11736208
申请日：2007-04-17
申请人： James L. Archibald , Clinton H. Holder, Jr. , Kang W. Lee , Edwin A. Muth , Kreg D. Ulery
发明人： James L. Archibald , Clinton H. Holder, Jr. , Kang W. Lee , Edwin A. Muth , Kreg D. Ulery
IPC分类号： G11C17/18
CPC分类号： H03K19/1731
摘要： In one embodiment, a integrated circuit (IC) configurable to have any one of a plurality of different feature sets, the IC including (a) one or more feature blocks adapted to be independently enabled or disabled, (b) a one-time-programmable (OTP) memory cell for each feature block, the OTP memory cell storing a value, and (c) a feature control module for each feature block, each feature control module connected between the corresponding OTP memory cell and the corresponding feature block, and adapted to enable or disable the corresponding feature block based on the value stored in the corresponding OTP memory cell. The OTP memory cells are programmed by a vendor to select the particular feature set for the IC which is to be available to a purchaser.
摘要翻译：在一个实施例中，集成电路（IC）可配置为具有多个不同特征集合中的任何一个，所述IC包括（a）一个或多个适于被独立启用或禁用的特征块，（b）每个特征块的可编程（OTP）存储单元，OTP存储单元存储一个值，以及（c）每个特征块的特征控制模块，每个特征控制模块连接在相应的OTP存储单元和对应的特征块之间，以及适于基于存储在相应的OTP存储单元中的值来启用或禁用对应的特征块。 OTP存储器单元由供应商编程以选择用于购买者可用的IC的特定功能集。

8. 发明授权

US07852697B2 Integrated circuit feature definition using one-time-programmable (OTP) memory 有权
标题翻译：使用一次可编程（OTP）存储器的集成电路特性定义
公开(公告)号：US07852697B2
公开(公告)日：2010-12-14
申请号：US12372196
申请日：2009-02-17
申请人： James L. Archibald , Kang W. Lee , Clinton H. Holder, Jr. , Edwin A. Muth , Kreg D. Ulery
发明人： James L. Archibald , Kang W. Lee , Clinton H. Holder, Jr. , Edwin A. Muth , Kreg D. Ulery
IPC分类号： G11C17/18
CPC分类号： H03K19/1731
摘要： In one embodiment, a integrated circuit (IC) configurable to have any one of a plurality of different feature sets, the IC including (a) one or more feature blocks adapted to be independently enabled or disabled, (b) a one-time-programmable (OTP) memory cell for each feature block, the OTP memory cell storing a value, and (c) a feature control module for each feature block, each feature control module connected between the corresponding OTP memory cell and the corresponding feature block, and adapted to enable or disable the corresponding feature block based on the value stored in the corresponding OTP memory cell. The OTP memory cells are programmed by a vendor to select the particular feature set for the IC which is to be available to a purchaser.
摘要翻译：在一个实施例中，集成电路（IC）可配置为具有多个不同特征集合中的任何一个，所述IC包括（a）一个或多个适于被独立启用或禁用的特征块，（b）每个特征块的可编程（OTP）存储单元，OTP存储单元存储一个值，以及（c）每个特征块的特征控制模块，每个特征控制模块连接在相应的OTP存储单元和对应的特征块之间，以及适于基于存储在相应的OTP存储单元中的值来启用或禁用对应的特征块。 OTP存储器单元由供应商编程以选择用于购买者可用的IC的特定功能集。

9. 发明申请

US20080144350A1 VOLTAGE PROGRAMMING SWITCH FOR ONE-TIME-PROGRAMMABLE (OTP) MEMORIES 有权
标题翻译：用于一次可编程（OTP）存储器的电压编程开关
公开(公告)号：US20080144350A1
公开(公告)日：2008-06-19
申请号：US11610284
申请日：2006-12-13
申请人： Clinton H. Holder , Kang W. Lee , Joseph E. Simko , Yehuda Smooha , Ying Zhu
发明人： Clinton H. Holder , Kang W. Lee , Joseph E. Simko , Yehuda Smooha , Ying Zhu
IPC分类号： G11C17/08
CPC分类号： G11C17/16 , G11C17/18
摘要： In one embodiment, the invention is an integrated circuit (IC) including an OTP memory and conditioning circuitry. The IC receives an externally-generated DC programming voltage signal that the conditioning circuitry transforms into a programming pulse signal for programming the OTP memory. The conditioning circuitry includes: (i) reset protection circuitry for holding the programming pulse signal low if the IC is powering up, (ii) an overvoltage protection circuit for substantially preventing the programming pulse voltage from exceeding predefined boundaries, and (iii) a conversion switch for controlling the programming pulse voltage. The programming pulse voltage is (i) substantially equivalent to the externally-generated DC voltage if an enable signal is on, and (ii) substantially equivalent to a reference voltage if the enable signal is off.
摘要翻译：在一个实施例中，本发明是包括OTP存储器和调节电路的集成电路（IC）。 IC接收外部产生的直流编程电压信号，调理电路变换为用于编程OTP存储器的编程脉冲信号。调节电路包括：（i）复位保护电路，用于在IC上电时保持编程脉冲信号为低电平，（ii）过压保护电路，用于基本上防止编程脉冲电压超出预定义的边界，以及（iii）转换用于控制编程脉冲电压的开关。如果使能信号为开，编程脉冲电压为（i）基本上等于外部产生的直流电压，以及（ii）如果使能信号关闭，则基本上等于参考电压。

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