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1. 发明申请

US20100044708A1 THIN FILM TRANSISTOR, PIXEL STRUCTURE AND FABRICATION METHODS THEREOF 审中-公开
标题翻译：薄膜晶体管，像素结构及其制造方法
公开(公告)号：US20100044708A1
公开(公告)日：2010-02-25
申请号：US12258459
申请日：2008-10-27
申请人： Heng-Chang Lin , Chun-Jen Ma , Yi-Ling Hung , Teng-Yuan Hsu
发明人： Heng-Chang Lin , Chun-Jen Ma , Yi-Ling Hung , Teng-Yuan Hsu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/124 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： A fabrication method of a thin film transistor includes providing a substrate at first. Thereafter, a first gate is formed on the substrate. An insulator is then formed to cover the first gate and a portion of the substrate. After that, a channel structure is formed on the insulator above the first gate. In addition, a metal layer is formed to cover the channel structure and a portion of the insulator. Next, the metal layer is patterned, and at least the metal layer on two sidewalls of the channel structure is retained to form a source and a drain, respectively. Moreover, a passivation layer is formed to at least cover the source, the drain and a portion of the insulator.
摘要翻译：薄膜晶体管的制造方法包括首先提供衬底。此后，在基板上形成第一栅极。然后形成绝缘体以覆盖第一栅极和衬底的一部分。之后，在第一栅极上的绝缘体上形成沟道结构。此外，形成金属层以覆盖沟道结构和绝缘体的一部分。接下来，对金属层进行图案化，并且至少保持沟道结构的两个侧壁上的金属层以分别形成源极和漏极。此外，钝化层形成为至少覆盖源极，漏极和绝缘体的一部分。

2. 发明申请

US20100227442A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20100227442A1
公开(公告)日：2010-09-09
申请号：US12544231
申请日：2009-08-20
申请人： Ya-Ju Lu , Jun-Yao Huang , Ming-Chu Chen , Yu-Fang Wang , Chun-Jen Ma
发明人： Ya-Ju Lu , Jun-Yao Huang , Ming-Chu Chen , Yu-Fang Wang , Chun-Jen Ma
IPC分类号： H01L21/336
CPC分类号： H01L29/66765 , H01L27/1255 , H01L27/1288
摘要： A method of manufacturing thin film transistor is provided, in which the method of manufacturing includes a new etching process of island semiconductor. The new etching process of island semiconductor is controlled by a flow rate of etching gas and a regulation of etching power. When etching the island semiconductor, a part of gate insulation layer exposed out of the island semiconductor is etched at the same time. Consequently, the thickness of gate insulation layer over the storage capacitance electrode is reduced, the distance between the pixel electrode and the storage capacitance electrode is decreased, and the storage capacitance of pixel is increased. Finally, the width of storage capacitance electrode is reduced appropriately and the aperture ratio of product is increased.
摘要翻译：提供一种制造薄膜晶体管的方法，其中制造方法包括岛状半导体的新的蚀刻工艺。岛状半导体的新的蚀刻工艺由蚀刻气体的流量和蚀刻功率的调节来控制。当蚀刻岛状半导体时，同时蚀刻露出岛状半导体的栅极绝缘层的一部分。因此，存储电容电极上的栅极绝缘层的厚度减小，像素电极和辅助电容电极之间的距离减小，并且像素的存储电容增加。最后，适当降低了存储电容电极的宽度，增加了产品的开口率。

3. 发明授权

US07816194B2 Method of manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07816194B2
公开(公告)日：2010-10-19
申请号：US12544231
申请日：2009-08-20
申请人： Ya-Ju Lu , Jun-Yao Huang , Ming-Chu Chen , Yu-Fang Wang , Chun-Jen Ma
发明人： Ya-Ju Lu , Jun-Yao Huang , Ming-Chu Chen , Yu-Fang Wang , Chun-Jen Ma
IPC分类号： H01L21/84
CPC分类号： H01L29/66765 , H01L27/1255 , H01L27/1288
摘要： A method of manufacturing thin film transistor is provided, in which the method of manufacturing includes a new etching process of island semiconductor. The new etching process of island semiconductor is controlled by a flow rate of etching gas and a regulation of etching power. When etching the island semiconductor, a part of gate insulation layer exposed out of the island semiconductor is etched at the same time. Consequently, the thickness of gate insulation layer over the storage capacitance electrode is reduced, the distance between the pixel electrode and the storage capacitance electrode is decreased, and the storage capacitance of pixel is increased. Finally, the width of storage capacitance electrode is reduced appropriately and the aperture ratio of product is increased.
摘要翻译：提供一种制造薄膜晶体管的方法，其中制造方法包括岛状半导体的新的蚀刻工艺。岛状半导体的新的蚀刻工艺由蚀刻气体的流量和蚀刻功率的调节来控制。当蚀刻岛状半导体时，同时蚀刻露出岛状半导体的栅极绝缘层的一部分。因此，存储电容电极上的栅极绝缘层的厚度减小，像素电极和辅助电容电极之间的距离减小，并且像素的存储电容增加。最后，适当降低了存储电容电极的宽度，增加了产品的开口率。

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