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1. 发明授权

US07446043B2 Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device 有权
标题翻译：具有硅化物层的接触结构，采用该硅化物层的半导体器件，以及制造接触结构和半导体器件的方法
公开(公告)号：US07446043B2
公开(公告)日：2008-11-04
申请号：US11416328
申请日：2006-05-02
申请人： Je-Min Park , Byung-Yoon Kim
发明人： Je-Min Park , Byung-Yoon Kim
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/76816 , H01L21/76855 , H01L21/76897 , H01L21/823418 , H01L21/823425 , H01L21/823443 , H01L21/823475 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2924/3011
摘要： A contact structure having silicide layers, a semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device are provided. The contact structure includes a first conductive region and a second conductive region on a substrate. An insulating layer covers the first and second conductive regions. A first contact hole and a second contact hole are formed through the insulating layer and expose the first and second conductive regions, respectively. A first silicide layer having a first thickness is on the first conductive region exposed by the first contact hole. A second silicide layer having a second thickness different than the first thickness is on the second conductive region exposed by the second contact hole.
摘要翻译：提供具有硅化物层的接触结构，采用该硅化物层的半导体器件以及制造接触结构和半导体器件的方法。接触结构包括第一导电区域和衬底上的第二导电区域。绝缘层覆盖第一和第二导电区域。通过绝缘层形成第一接触孔和第二接触孔，分别露出第一和第二导电区域。具有第一厚度的第一硅化物层在由第一接触孔暴露的第一导电区上。具有不同于第一厚度的第二厚度的第二硅化物层在由第二接触孔暴露的第二导电区域上。

2. 发明申请

US20070059931A1 Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device 有权
标题翻译：具有硅化物层的接触结构，采用该硅化物层的半导体器件，以及制造接触结构和半导体器件的方法
公开(公告)号：US20070059931A1
公开(公告)日：2007-03-15
申请号：US11416328
申请日：2006-05-02
申请人： Je-Min Park , Byung-Yoon Kim
发明人： Je-Min Park , Byung-Yoon Kim
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/76816 , H01L21/76855 , H01L21/76897 , H01L21/823418 , H01L21/823425 , H01L21/823443 , H01L21/823475 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2924/3011
摘要： A contact structure having silicide layers, a semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device are provided. The contact structure includes a first conductive region and a second conductive region on a substrate. An insulating layer covers the first and second conductive regions. A first contact hole and a second contact hole are formed through the insulating layer and expose the first and second conductive regions, respectively. A first silicide layer having a first thickness is on the first conductive region exposed by the first contact hole. A second silicide layer having a second thickness different than the first thickness is on the second conductive region exposed by the second contact hole.
摘要翻译：提供具有硅化物层的接触结构，采用该硅化物层的半导体器件以及制造接触结构和半导体器件的方法。接触结构包括第一导电区域和衬底上的第二导电区域。绝缘层覆盖第一和第二导电区域。通过绝缘层形成第一接触孔和第二接触孔，分别露出第一和第二导电区域。具有第一厚度的第一硅化物层在由第一接触孔暴露的第一导电区上。具有不同于第一厚度的第二厚度的第二硅化物层在由第二接触孔暴露的第二导电区域上。

3. 发明授权

US06525398B1 Semiconductor device capable of preventing moisture-absorption of fuse area thereof 有权
标题翻译：能够防止其保险丝区域的吸湿的半导体装置
公开(公告)号：US06525398B1
公开(公告)日：2003-02-25
申请号：US09650967
申请日：2000-08-29
申请人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
发明人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
IPC分类号： H01L2900
CPC分类号： H01L23/564 , H01L21/768 , H01L23/5258 , H01L23/585 , H01L27/10814 , H01L27/10894 , H01L27/11 , H01L2924/0002 , Y10S257/906 , Y10S257/907 , Y10S257/908 , H01L2924/00
摘要： A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. A guard ring opening portion is formed using the etch stop layer. The guard ring opening portion is filled with a material for forming the uppermost wiring of multi-level interconnect wirings or the material of a passivation layer, thereby forming the guard ring concurrently with the uppermost interconnect wiring or the passivation layer. Accordingly, permeation of moisture through an interlayer insulating layer or the interface between interlayer insulating layers around the fuse opening portion can be efficiently prevented by a simple process. In addition, the etch stop layer is also formed under the fuse opening portion so that an insulating layer remaining on the fuse line can be controlled to have a predetermined thickness when forming the fuse opening portion, thereby improving the cutting efficiency of fuses.
摘要翻译：提供了能够防止吸湿的半导体器件的保险丝区域和制造保险丝区域的方法。当形成用于防止湿气透过露出的保险丝开口部分的侧壁的保护环时，在熔丝线上形成蚀刻停止层。使用蚀刻停止层形成防护环开口部。保护环开口部分填充有用于形成多层互连布线的最上布线或钝化层的材料的材料，从而与最上面的布线或钝化层同时形成保护环。因此，可以通过简单的工艺有效地防止湿气渗透到层间绝缘层或熔断器开口部周围的层间绝缘层之间的界面。另外，在保险丝开口部分也形成有蚀刻停止层，使得在形成保险丝开口部分时，保留在熔丝线上的绝缘层可以被控制为具有预定的厚度，从而提高了保险丝的切割效率。

4. 发明授权

US5305259A Power source voltage tracking circuit for stabilization of bit lines 失效
标题翻译：用于稳定位线的电源电压跟踪电路
公开(公告)号：US5305259A
公开(公告)日：1994-04-19
申请号：US359274
申请日：1989-05-31
申请人： Byung-Yoon Kim
发明人： Byung-Yoon Kim
IPC分类号： G11C11/413 , G05F1/571 , G05F3/24 , G06F12/00 , G06F13/00 , G11C5/14 , G11C7/12 , G11C11/41 , H01L21/822 , H01L27/04 , H01L27/10 , H03K17/14 , H03K17/16 , G11C7/00 , G05F3/04 , G05F3/08 , H02J1/14 , H03K3/01
CPC分类号： G11C5/147 , G05F1/571 , G05F3/24 , G11C7/12 , H03K17/145 , H03K17/162
摘要： A power source voltage tracking circuit, for providing a given voltage which is lower than power source voltage, containing a first node for applying a power source voltage, a second node and an output line, a load connected between the first node and the output line to precharge the output line with the given voltage, elements connected between said first node and said second node to charge the second node, and elements to discharges the output line charged with the given voltage in response to the charging voltage of the second node.
摘要翻译：一种用于提供低于电源电压的给定电压的电源电压跟踪电路，包括用于施加电源电压的第一节点，第二节点和输出线，连接在第一节点和输出线之间的负载连接在所述第一节点和所述第二节点之间的元件对所述给定电压预充电，以及响应于所述第二节点的充电电压而对被给定电压充电的所述输出线进行放电的元件。

5. 发明授权

US07517762B2 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area 有权
标题翻译：能够防止保险丝区域吸湿的半导体装置及制造保险丝区域的方法
公开(公告)号：US07517762B2
公开(公告)日：2009-04-14
申请号：US11139906
申请日：2005-05-26
申请人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
发明人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
IPC分类号： H01L23/62 , H01L21/8242
CPC分类号： H01L23/564 , H01L21/768 , H01L23/5258 , H01L23/585 , H01L27/10814 , H01L27/10894 , H01L27/11 , H01L2924/0002 , Y10S257/906 , Y10S257/907 , Y10S257/908 , H01L2924/00
摘要： A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. A guard ring opening portion is formed using the etch stop layer. The guard ring opening portion is filled with a material for forming the uppermost wiring of multi-level interconnect wirings or the material of a passivation layer, thereby forming the guard ring concurrently with the uppermost interconnect wiring or the passivation layer. Accordingly, permeation of moisture through an interlayer insulating layer or the interface between interlayer insulating layers around the fuse opening portion can be efficiently prevented by a simple process. In addition, the etch stop layer is also formed under the fuse opening portion so that an insulating layer remaining on the fuse line can be controlled to have a predetermined thickness when forming the fuse opening portion, thereby improving the cutting efficiency of fuses.
摘要翻译：提供了能够防止吸湿的半导体器件的保险丝区域和制造保险丝区域的方法。当形成用于防止湿气透过露出的保险丝开口部分的侧壁的保护环时，在熔丝线上形成蚀刻停止层。使用蚀刻停止层形成防护环开口部。保护环开口部分填充有用于形成多层互连布线的最上布线或钝化层的材料的材料，从而与最上面的布线或钝化层同时形成保护环。因此，可以通过简单的工艺有效地防止湿气渗透到层间绝缘层或熔断器开口部周围的层间绝缘层之间的界面。另外，在保险丝开口部分也形成有蚀刻停止层，使得在形成保险丝开口部分时，保留在熔丝线上的绝缘层可以被控制为具有预定的厚度，从而提高了保险丝的切割效率。

6. 发明申请

US20080067692A1 SEMICONDUCTOR DEVICES HAVING CONTACT PAD PROTECTION FOR REDUCED ELECTRICAL FAILURES AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：具有减少电气故障的接触垫保护的半导体器件及其制造方法
公开(公告)号：US20080067692A1
公开(公告)日：2008-03-20
申请号：US11854093
申请日：2007-09-12
申请人： Jae-Hun Kim , Byung-Yoon Kim
发明人： Jae-Hun Kim , Byung-Yoon Kim
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76897 , H01L27/0203 , H01L27/10808 , H01L27/10888
摘要： A semiconductor device includes contact pads formed in a first interlayer insulating layer on a semiconductor substrate, contact pad protecting patterns covering edges of a surface of the contact pads, and conductive lines positioned on a second interlayer insulating layer covering the contact pad protecting patterns and selectively connected to the contact pads.
摘要翻译：半导体器件包括形成在半导体衬底上的第一层间绝缘层中的接触焊盘，覆盖接触焊盘表面的边缘的接触焊盘保护图案，以及位于覆盖接触焊盘保护图案的第二层间绝缘层上的导电线，并且选择性地连接到接触垫。

7. 发明申请

US20080067678A1 Semiconductor Devices Having Contact Holes Including Protrusions Exposing Contact Pads and Methods of Fabricating the Same 有权
标题翻译：具有接触孔的半导体器件包括暴露接触垫的突起及其制造方法
公开(公告)号：US20080067678A1
公开(公告)日：2008-03-20
申请号：US11850208
申请日：2007-09-05
申请人： Byung-yoon Kim
发明人： Byung-yoon Kim
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76801 , H01L21/76804 , H01L27/10808 , H01L27/10885 , H01L27/10888
摘要： Semiconductor devices are provided including a semiconductor substrate and a first interlayer insulating layer on the semiconductor substrate. A contact pad is provided in the first interlayer insulating layer and a second insulating layer is provided on the first interlayer insulating layer. A contact hole is provided in the second interlayer insulating layer. The contact hole exposes the contact pad and a lower portion of the contact hole has a protrusion exposing the contact pad. The protrusion is provided on the second interlayer insulating layer. A contact spacer is provided on inside sidewalls of the contact hole and fills the protrusion. A contact plug is provided in the contact hole. Related methods are also provided herein.
摘要翻译：提供半导体器件，其包括在半导体衬底上的半导体衬底和第一层间绝缘层。接触焊盘设置在第一层间绝缘层中，第二绝缘层设置在第一层间绝缘层上。接触孔设置在第二层间绝缘层中。接触孔暴露接触焊盘，并且接触孔的下部具有暴露接触焊盘的突起。突起设置在第二层间绝缘层上。接触间隔件设置在接触孔的内侧壁上并填充突出部。在接触孔中设置接触塞。本文还提供了相关方法。

8. 发明授权

US06254175B1 Air vent system for door of automobile 失效
标题翻译：汽车门排气系统
公开(公告)号：US06254175B1
公开(公告)日：2001-07-03
申请号：US09709681
申请日：2000-11-09
申请人： Byung-Yoon Kim
发明人： Byung-Yoon Kim
IPC分类号： B60J504
CPC分类号： B60H1/3421 , B60H1/247 , B60H2001/3478
摘要： The invention relates to an air vent system for a door of an automobile to allow a passenger to avoid undesired exposure to air by completely blocking an air duct, the system constructed with a door duct installed at a door with an inlet that is to be tightly aligned to a duct of a crush pad when the door is closed and an outlet formed to a predetermined direction of the door and control apparatus installed in the front side of the door duct to control an air exhausting direction, the system comprising: a damper arranged in the center of the door duct for opening and closing the door duct at the time of rotations; a damper knob coupled with a rotary axis at an edge of the door duct to be rotated; and links connecting damper and damper knob which is rotated to allow the damper to open and close the door duct.
摘要翻译：本发明涉及一种用于汽车门的排气系统，以允许乘客通过完全阻挡风道来避免不期望的暴露在空气中，该系统由安装在门上的门导管构成，入口必须紧紧当门关闭时与粉碎垫的管道对准，并且出口形成为门和控制装置的预定方向并且安装在门管道的前侧以控制排气方向，该系统包括：阻尼器，其布置成在门管的中心，用于在旋转时打开和关闭门导管; 阻尼器旋钮，其与所述门导管的边缘处的旋转轴线相连接以旋转; 以及连接阻尼器和阻尼器旋钮的连杆，其被旋转以允许阻尼器打开和关闭门导管。

9. 发明申请

US20050221539A1 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area 有权
标题翻译：能够防止保险丝区域吸湿的半导体装置及制造保险丝区域的方法
公开(公告)号：US20050221539A1
公开(公告)日：2005-10-06
申请号：US11139906
申请日：2005-05-26
申请人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
发明人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
IPC分类号： H01L27/00 , H01L21/768 , H01L21/82 , H01L21/8242 , H01L21/8244 , H01L23/00 , H01L23/525 , H01L23/58 , H01L27/108
CPC分类号： H01L23/564 , H01L21/768 , H01L23/5258 , H01L23/585 , H01L27/10814 , H01L27/10894 , H01L27/11 , H01L2924/0002 , Y10S257/906 , Y10S257/907 , Y10S257/908 , H01L2924/00
摘要： A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. A guard ring opening portion is formed using the etch stop layer. The guard ring opening portion is filled with a material for forming the uppermost wiring of multi-level interconnect wirings or the material of a passivation layer, thereby forming the guard ring concurrently with the uppermost interconnect wiring or the passivation layer. Accordingly, permeation of moisture through an interlayer insulating layer or the interface between interlayer insulating layers around the fuse opening portion can be efficiently prevented by a simple process. In addition, the etch stop layer is also formed under the fuse opening portion so that an insulating layer remaining on the fuse line can be controlled to have a predetermined thickness when forming the fuse opening portion, thereby improving the cutting efficiency of fuses.
摘要翻译：提供了能够防止吸湿的半导体器件的保险丝区域和制造保险丝区域的方法。当形成用于防止湿气透过露出的保险丝开口部分的侧壁的保护环时，在熔丝线上形成蚀刻停止层。使用蚀刻停止层形成防护环开口部。保护环开口部分填充有用于形成多层互连布线的最上布线或钝化层的材料的材料，从而与最上面的布线或钝化层同时形成保护环。因此，可以通过简单的工艺有效地防止湿气渗透到层间绝缘层或熔断器开口部周围的层间绝缘层之间的界面。另外，在保险丝开口部分也形成有蚀刻停止层，使得在形成保险丝开口部分时，保留在熔丝线上的绝缘层可以被控制为具有预定的厚度，从而提高了保险丝的切割效率。

10. 发明授权

US06913953B2 Semiconductor device capable of preventing moisture absorption of fuse area thereof and method for manufacturing the fuse area 有权
标题翻译：能够防止保险丝区域的吸湿的半导体装置及制造保险丝区域的方法
公开(公告)号：US06913953B2
公开(公告)日：2005-07-05
申请号：US10334745
申请日：2002-12-31
申请人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
发明人： Byung-yoon Kim , Won-seong Lee , Young-woo Park
IPC分类号： H01L27/00 , H01L21/768 , H01L21/82 , H01L21/8242 , H01L21/8244 , H01L23/00 , H01L23/525 , H01L23/58 , H01L27/108 , H01L21/44
CPC分类号： H01L23/564 , H01L21/768 , H01L23/5258 , H01L23/585 , H01L27/10814 , H01L27/10894 , H01L27/11 , H01L2924/0002 , Y10S257/906 , Y10S257/907 , Y10S257/908 , H01L2924/00
摘要： A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. A guard ring opening portion is formed using the etch stop layer. The guard ring opening portion is filled with a material for forming the uppermost wiring of multi-level interconnect wirings or the material of a passivation layer, thereby forming the guard ring concurrently with the uppermost interconnect wiring or the passivation layer. Accordingly, permeation of moisture through an interlayer insulating layer or the interface between interlayer insulating layers around the fuse opening portion can be efficiently prevented by a simple process. In addition, the etch stop layer is also formed under the fuse opening portion so that an insulating layer remaining on the fuse line can be controlled to have a predetermined thickness when forming the fuse opening portion, thereby improving the cutting efficiency of fuses.
摘要翻译：提供了能够防止吸湿的半导体器件的保险丝区域和制造保险丝区域的方法。当形成用于防止湿气透过露出的保险丝开口部分的侧壁的保护环时，在熔丝线上形成蚀刻停止层。使用蚀刻停止层形成防护环开口部。保护环开口部分填充有用于形成多层互连布线的最上布线或钝化层的材料的材料，从而与最上面的布线或钝化层同时形成保护环。因此，可以通过简单的工艺有效地防止湿气渗透到层间绝缘层或熔断器开口部周围的层间绝缘层之间的界面。另外，在保险丝开口部分也形成蚀刻停止层，使得在形成保险丝开口部分时，保留在熔丝线上的绝缘层可以被控制成具有预定的厚度，从而提高保险丝的切割效率。

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