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1. 发明申请

US20230075507A1 ULTRASONIC ARRAY TRANSCEIVER METHOD AND MODULE THEREOF 有权
公开(公告)号：US20230075507A1
公开(公告)日：2023-03-09
申请号：US17902563
申请日：2022-09-02
申请人： OPTO TECH CORPORATION
发明人： DI-BAO WANG
IPC分类号： H04B11/00
摘要： The present invention provides an ultrasonic array transceiver method and module thereof. The method includes the step (a) providing an ultrasonic pixel array composed of N×M ultrasonic pixels; step (b), determining the number of a plurality of ultrasonic pixel groups in the ultrasonic pixel array; step (c), generate the first sound wave; step (d), transmit the first sound wave to obtain a plurality of second sound waves; step (e), receive the second sound waves, wherein the ultrasonic pixel received the second sound wave is located at the middle position or adjacent to the middle position of the ultrasonic pixel group; step (f), calculating the second sound waves to generate a pixel signal; step (g), repeating steps (c) to (f); and in step (h), determine an image based on pixel signals.

2. 发明申请

US20210111310A1 LIGHT EMITTING CHIP AND ASSOCIATED PACKAGE STRUCTURE 有权
公开(公告)号：US20210111310A1
公开(公告)日：2021-04-15
申请号：US17106990
申请日：2020-11-30
申请人： OPTO TECH CORPORATION
发明人： Chang-Da TSAI , Wei-Che WU , Kuan-Kai HUANG
IPC分类号： H01L33/38 , H01L25/075 , H01L33/06 , H01L33/12 , H01L33/24 , H01L33/42 , H01L33/60 , H01L33/62 , H01L33/00
摘要： A light emitting chip and associated package structure are provided. The light emitting chip includes a substrate, a first type layer, an active layer, a second type layer, a first type electrode and a second type electrode. A second portion of the first type layer is located over the substrate. A first portion of the first type layer is located over the second portion of the first type layer. The active layer is located over the first portion of the first type layer. The second type layer is located over the active layer. The first type electrode is contacted with a top surface and a sidewall of the second portion of the first type layer and contacted with a portion of a sidewall of the substrate. The second type electrode is contacted with the second type layer.

3. 发明申请

US20200083394A1 INFRARED THERMAL EMITTER 审中-公开
公开(公告)号：US20200083394A1
公开(公告)日：2020-03-12
申请号：US16539423
申请日：2019-08-13
申请人： Godsmith Sensor Inc. , Opto Tech Corporation
发明人： Jin-Shown SHIE , Yi-Chun LIAO , Chieh-Yi CHEN , Chung-Cheng LIN , Cheng-Wei YANG , Chi-Tseng CHANG
IPC分类号： H01L31/09 , H01L31/16 , H04N5/33
摘要： An infrared thermal emitter includes a substrate, a light-emitting unit and an infrared-emitting unit. The light-emitting unit is disposed on the substrate in a laminating direction and has a light-exiting surface away from the substrate. The infrared-emitting unit is disposed on the substrate in the laminating direction to cover the light-emitting unit and includes a layered structure having a light-absorbing layer that is aligned with the light-emitting unit in the laminating direction. The light-absorbing layer absorbs light emitted from the light-emitting unit so as to be heated up and to generate infrared radiation.

4. 发明授权

US09923119B2 White LED chip and white LED packaging device 有权
公开(公告)号：US09923119B2
公开(公告)日：2018-03-20
申请号：US14489639
申请日：2014-09-18
申请人： OPTO TECH CORPORATION
发明人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
IPC分类号： H01L33/00 , H01L33/34 , H01L33/32 , H01L33/06 , H01L33/26 , H01L33/58 , H01L33/16
CPC分类号： H01L33/34 , H01L33/06 , H01L33/16 , H01L33/26 , H01L33/32 , H01L33/58
摘要： A white LED chip includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first material layer, the active layer includes a second material layer, and the second barrier layer includes a third material layer. The N-type layer is disposed over the tunneling structure. An energy gap of the second material layer is lower than an energy gap of the first material layer and an energy gap of the third material layer. Each of the first material layer, the second material layer and the third material layer is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.

5. 发明授权

US08981373B1 White LED 有权
标题翻译：白色LED
公开(公告)号：US08981373B1
公开(公告)日：2015-03-17
申请号：US14146097
申请日：2014-01-02
申请人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
发明人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
IPC分类号： H01L21/02 , H01L33/08 , H01L33/28 , H01L33/32 , H01L33/34
CPC分类号： H01L33/08 , H01L33/26 , H01L33/32
摘要： A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.
摘要翻译：提供白色LED。白色LED包括P型层，隧道结构，N型层，N型电极和P型电极。隧道结构设置在P型层上。隧道结构包括第一阻挡层，有源层和第二阻挡层。第一阻挡层包括第一金属氧化物层。有源层包括第二金属氧化物层。第二阻挡层包括第三金属氧化物层。 N型层设置在隧道结构之上。 N型电极和P型电极分别与N型层和P型层接触。第二金属氧化物层的能隙低于第一金属氧化物层的能隙，并且低于第三金属氧化物层的能隙。

6. 发明申请

US20140252308A1 METHOD OF SELECTIVE PHOTO-ENHANCED WET OXIDATION FOR NITRIDE LAYER REGROWTH ON SUBSTRATES AND ASSOCIATED STRUCTURE 有权
公开(公告)号：US20140252308A1
公开(公告)日：2014-09-11
申请号：US13788411
申请日：2013-03-07
申请人： OPTO TECH CORPORATION
发明人： LUNG-HAN PENG , JENG-WEI YU , PO-CHUN YEH
IPC分类号： H01L33/06
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/02639 , H01L33/007 , H01L33/06
摘要： Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

7. 发明授权

US08487325B2 Light emitting diode with large viewing angle and fabricating method thereof 有权
标题翻译：具有大视角的发光二极管及其制造方法
公开(公告)号：US08487325B2
公开(公告)日：2013-07-16
申请号：US13351648
申请日：2012-01-17
申请人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
发明人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/0012 , H01L33/0062 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.
摘要翻译：发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。这些柱结构形成在基板上。每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。在基板上形成第一类型的半导体层。柱结构通过第一类型半导体层彼此电连接。填料结构形成在柱结构之间。柱结构的填充结构和第二类型半导体层被透明导电层覆盖。第一电极与透明导电层接触。第二电极与第一类型半导体层接触。

8. 发明授权

US06893312B1 White light emitting organic electro-luminescent device and method for fabricating the same 失效
标题翻译：白色发光有机电致发光器件及其制造方法
公开(公告)号：US06893312B1
公开(公告)日：2005-05-17
申请号：US10641044
申请日：2003-08-15
申请人： Feng-Ju Chuang
发明人： Feng-Ju Chuang
IPC分类号： H01L27/32 , H01L51/50 , H05B33/00
CPC分类号： H01L51/5036 , H01L27/322
摘要： A white light emitting organic electro-luminescent (EL) device and a method for fabricating the same are provided. The device comprises: a substrate; a bottom electrode formed on a top surface of the substrate; at least an organic layer comprising an organic emitting layer formed on a surface of the bottom electrode to emit a first-color light; at least a transparent opposed electrode formed on a surface of the organic layer; and a sealing cap layer covering the organic layer and the transparent opposed electrode, wherein a color conversion layer is disposed on an inner surface of the sealing cap layer for converting a percentage of the first-color light into a second-color light and a third-color light. Therefore, a white light source is achieved by mixing the three primary colors.
摘要翻译：提供了一种白色发光有机电致发光（EL）器件及其制造方法。该装置包括：基板; 底部电极，形成在所述基板的顶表面上; 至少一个有机层，包括形成在所述底部电极的表面上以发射第一色光的有机发光层; 至少形成在所述有机层的表面上的透明相对电极; 以及覆盖所述有机层和所述透明相对电极的密封盖层，其中，在所述密封盖层的内表面上设置颜色转换层，用于将所述第一颜色光的百分比转换为第二颜色的光和第三颜色光彩灯。因此，通过混合三原色实现白光源。

9. 发明申请

US20020131726A1 Method and structure for packaging a high efficiency electro-optics device 失效
标题翻译：用于封装高效电光器件的方法和结构
公开(公告)号：US20020131726A1
公开(公告)日：2002-09-19
申请号：US10085584
申请日：2002-03-01
申请人： OPTO TECH CORPORATION
发明人： Ming-Der Lin , Chang-Da Tsai , Kwang-Ru Wang , Ching-Liang Kao , Wen-Liang Tseng , Chia-Chen Chang
IPC分类号： G02B006/36 , G02B006/12
CPC分类号： H01L33/62 , H01L33/60 , H01L2224/48091 , H01L2924/01322 , H01L2924/12041 , H01L2924/00014
摘要： A method and a structure for packaging an electro-optics device are disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.
摘要翻译：公开了一种用于封装电光器件的方法和结构。在模具载体和电光器件之间添加透明材料，从而可以提取从电光器件的背面发射的光。此外，在模具载体上形成光反射层，并且设计光反射层的图案以防止光被反射到有源层，反射再次降低发光效率。

10. 发明授权

US5659127A Substrate structure of monolithic gas sensor 失效
标题翻译：单片气体传感器基板结构
公开(公告)号：US5659127A
公开(公告)日：1997-08-19
申请号：US701799
申请日：1996-08-26
申请人： Jin-Shown Shie , Hsin-Fang Lei
发明人： Jin-Shown Shie , Hsin-Fang Lei
IPC分类号： G01N27/12
CPC分类号： G01N27/12
摘要： A substrate structure of a monolithic gas sensor is disclosed, wherein the substrate structure is formed as a thermal resistant and insulating suspended thin plate configuration on a single crystal silicon substrate. The thin plate has formed thereon a heating resistor and coated with tin-oxide-base reducing gas-sensitive material. The thermal resistant thin plate formed on the silicon substrate comprises a native silicon oxide layer, a silicon-rich silicon nitride layer deposited on the native silicon oxide layer, and a top silicon oxide layer formed by thermal oxidation of a surface layer of the deposited silicon-rich silicon nitride layer. An oxide-nitride-oxide sandwiched composited configuration is thus formed that can relieve mechanical stresses internal to the thin plate. The suspended thermal resistantthin plate has corrugation portions formed near the plate edges for relieving mechanical stresses arising from thermal expansion of the silicon substrate and the thin plate when heated to high temperature. The heating resistor formed on the thin plate comprises a polysilicon layer and is covered by a passivation and then by an aluminum oxide layer having a thickness of about several hundred angstroms. The coated tin-oxide-based material is formed by thick-film screen printing to form a sensor film for the single-chip sensing element. Improved thermal and mechanical stress characteristics are obtained while achieving lower electrical power consumption and also maintaining low cost of manufacturing when batched produced.
摘要翻译：公开了一种单片气体传感器的衬底结构，其中衬底结构在单晶硅衬底上形成为耐热绝缘悬浮薄板结构。薄板上形成有加热电阻体，并涂覆有氧化锡基还原气体敏感材料。形成在硅衬底上的耐热薄板包括天然硅氧化物层，沉积在天然氧化硅层上的富硅氮化物层和通过沉积硅的表面层的热氧化形成的顶部氧化硅层富氮的氮化硅层。因此形成了可以减轻薄板内部的机械应力的氧化物 - 氮化物 - 氧化物夹层复合构造。悬挂的耐热板有在板边缘附近形成的波纹部分，用于在加热到高温时缓解由硅基板和薄板的热膨胀产生的机械应力。形成在薄板上的加热电阻器包括多晶硅层，并被钝化物覆盖，然后被厚度约为几百埃的氧化铝层覆盖。涂覆的氧化锡基材料通过厚膜丝网印刷形成以形成用于单芯片感测元件的传感器膜。在获得更低的电力消耗的同时获得改进的热和机械应力特性，并且当批量生产时也保持低的制造成本。

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