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    • 1. 发明专利
    • 聚合物及包括該聚合物之光阻劑 POLYMERS AND PHOTORESISTS COMPRISING SAME
    • 聚合物及包括该聚合物之光阻剂 POLYMERS AND PHOTORESISTS COMPRISING SAME
    • TWI317458B
    • 2009-11-21
    • TW093105491
    • 2004-03-03
    • 羅門哈斯電子材料有限公司
    • 沙賓尼 安東尼張弢李才永
    • G03F
    • G03F7/0757C08G77/24G03F7/0046G03F7/0382G03F7/0392G03F7/0395G03F7/0397Y10S430/106Y10S430/108Y10S430/115
    • 提供新穎聚合物,其具有非碳四價物種(矽、鈦、鍺、鋯、錫)以及提供含有此種聚合物之光可成像組成物。較佳聚合物為有機聚合物,例如一或多個聚合物重複單位包含碳原子。特佳為包含二氧化矽或二氧化鈦重複單位之聚合物,該聚合物高度有用於作為於如次300奈米及次200奈米之短波長成像之光阻劑之樹脂成分。 New polymers are provided that have non-carbon tetravalent species (Si, Ti, Ge, Zr, Sn) and photoimageable compositions that contain such polymers. Preferred polymers are organic, e.g. one or more polymer repeat units comprise carbon atom(s). Particularly pteferred are polymers that comprise SiQ2 or Tio2 repeat units and which can be highly useful as a resin component of resists imaged at short wavelengths such as sub-300 nm and sub-200 nm.
    • 提供新颖聚合物,其具有非碳四价物种(硅、钛、锗、锆、锡)以及提供含有此种聚合物之光可成像组成物。较佳聚合物为有机聚合物,例如一或多个聚合物重复单位包含碳原子。特佳为包含二氧化硅或二氧化钛重复单位之聚合物,该聚合物高度有用于作为于如次300奈米及次200奈米之短波长成像之光阻剂之树脂成分。 New polymers are provided that have non-carbon tetravalent species (Si, Ti, Ge, Zr, Sn) and photoimageable compositions that contain such polymers. Preferred polymers are organic, e.g. one or more polymer repeat units comprise carbon atom(s). Particularly pteferred are polymers that comprise SiQ2 or Tio2 repeat units and which can be highly useful as a resin component of resists imaged at short wavelengths such as sub-300 nm and sub-200 nm.