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    • 1. 发明公开
    • 화상표시장치용 광반사 부재 및 그 제조방법
    • 用于显示装置的光反射构件及其制造方法
    • KR1020050052317A
    • 2005-06-02
    • KR1020040035098
    • 2004-05-18
    • 히타치 긴조쿠 가부시키가이샤
    • 나카오카노리유키오히시가츠히코이노우에료지
    • C03C10/06C03C14/00H01J11/44
    • C03C8/02G02B5/08H01J9/02H01J11/44H01J17/49
    • A reflection layer for image display device having high visible light reflectivity, member for image display device using the reflection layer, and manufacturing method of the member for image display device are provided. At least a part of the light reflection member for image display device is an oxide having a phase separated or grained diploid phase status. The oxide is a silicon-based oxide which containing more than 50 mole% of silicon oxide. The light reflection member for image display device is a silicon-based oxide which containing more than one of 5 to 40 mole% of alkali metal salt or alkaline earth metal salt preferably. The manufacturing method of the light reflection member for image display device includes a step of depositing a silicon-based oxide which containing more than 50 mole% of silicon oxide by vapor deposition. Then a heat process is performed for phase separating or graining the silicon-based oxide to form a oxide with diploid phase status.
    • 提供了具有高可见光反射率的图像显示装置的反射层,使用反射层的图像显示装置的构件以及图像显示装置的构件的制造方法。 用于图像显示装置的光反射构件的至少一部分是具有相分离或纹理二次相位状态的氧化物。 氧化物是含有超过50摩尔%的氧化硅的硅系氧化物。 用于图像显示装置的光反射构件是优选含有5至40摩尔%的碱金属盐或碱土金属盐中多于一种的硅基氧化物。 用于图像显示装置的光反射构件的制造方法包括通过气相沉积沉积含有多于50摩尔%的氧化硅的硅基氧化物的步骤。 然后进行热处理以相分离或磨碎硅基氧化物以形成具有二倍体相位状态的氧化物。