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    • 4. 发明公开
    • 광 빗살 발생기
    • 光学发电机
    • KR1020120035816A
    • 2012-04-16
    • KR1020100100398
    • 2010-10-14
    • 한국전자통신연구원
    • 권오기이철욱이동훈임영안한영탁백용순
    • G02B6/26G02F1/017G02F1/025
    • G02F1/2257G02B2006/12128G02F2001/01741G02F2001/01758G02F2203/56H01S5/0085H01S5/02248
    • PURPOSE: An optical comb generator is provided to stably generate an optical comb by being integrated on a single substrate. CONSTITUTION: An optical comb generator(100) comprises a substrate(110), a light source(120), and a Mach-Zehnder modulator(130). The Mach-Zehnder modulator comprises a first manual waveguide area(131), a modulation region(133), and a second manual waveguide area(135). The light source outputs light of a single mode. The first manual waveguide area divides the output of the light source into first light and second light. A modulation region includes a first modulator and a second modulator for respectively modulating the first light and the second light. The second manual waveguide area outputs an optical comb by combining output results of the first modulator and the second modulator.
    • 目的:提供光梳发生器,通过集成在单个基板上来稳定地产生光梳。 构成:光梳发生器(100)包括衬底(110),光源(120)和马赫 - 曾德调制器(130)。 马赫 - 策德尔调制器包括第一手动波导区域(131),调制区域(133)和第二手动波导区域(135)。 光源输出单模光。 第一手动波导区域将光源的输出分成第一光和第二光。 调制区域包括用于分别调制第一光和第二光的第一调制器和第二调制器。 第二手动波导区域通过组合第一调制器和第二调制器的输出结果来输出光梳。
    • 5. 发明公开
    • 광 변조기 및 광 변조기 제조 방법
    • 具有提高有效光电发生能力的量子阱结构的半导体光学调制器
    • KR1020060125547A
    • 2006-12-06
    • KR1020060048789
    • 2006-05-30
    • 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드
    • 보데이비드피쥬진티안
    • H01L31/02
    • B82Y20/00G02F1/01725G02F2001/0175G02F2001/01758
    • A semiconductor optical modulator having a quantum well structure for efficiency increasing capabilities of generating photocurrent is provided to maximize the operation speed of an optical modulator and photocurrent capable of being generated by the optical modulator by supplying a lower energy barrier to electrons and/or holes. A quantum well layer(106,112) is interposed between a barrier layer(108) and a first waveguide layer(104,116). The quantum well layer includes a stepwise structure in which the bandgap energy of the quantum well layer varies between a minimum bandgap energy and a bandgap energy of at least one of the first waveguide layer and the barrier layer. The material of the quantum well layer has the same component as the material of the first waveguide layer and the barrier layer.
    • 提供具有用于提高产生光电流的效率提高能力的量子阱结构的半导体光调制器,以通过向电子和/或空穴提供较低的能量势垒来最大化光调制器的运行速度和能够由光调制器产生的光电流。 量子阱层(106,112)插入在阻挡层(108)和第一波导层(104,116)之间。 量子阱层包括阶跃结构,其中量子阱层的带隙能量在第一波导层和阻挡层中的至少一个的最小带隙能量和带隙能量之间变化。 量子阱层的材料与第一波导层和阻挡层的材料具有相同的成分。