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    • 4. 发明公开
    • 전도체 코팅용 조성물 및 그의 제조방법
    • 用于涂覆电导体的组合物和用于生产这种组合物的方法
    • KR1020090055618A
    • 2009-06-02
    • KR1020097006973
    • 2007-09-04
    • 라이브니츠-인스티투트 퓌어 노이에 마테리알리엔 게마인누찌게 게엠베하
    • 알바이락,세너베커-빌링거,카르스텐파이트,미하엘악타스,오랄,첸크
    • C08K3/18C08K3/30H01B3/30H01K3/30
    • C09D7/1225C08K3/22C08K3/30C08K9/04C08K9/08C09D7/62C09D7/67C09D7/68H01B3/006
    • The invention relates to a composition for coating electric conductors and a method for producing such a composition. The aim of the invention is to create a composition for coating electric conductors which is significantly more resistant to partial discharges than prior art compositions while the produced insulating layer is highly extensible. Said aim is achieved by a composition comprising 1 to 50 percent by weight of microparticles that have a specifically adjusted electronic defect structure in the crystal lattice, resulting in greater polarizability of the valence electrons, and an organic and/or organic-inorganic matrix. The microparticles that have a specifically adjusted electronic defect structure are composed of oxides, sulfides, selenides, tellurides of the elements which are part of the series encompassing silicon, zinc, aluminum, tin, boron, germanium, gallium, lead, the transition metals, lanthanides, and actinides, particularly from the series encompassing silicon, titanium, zinc, yttrium, cerium, vanadium, hafnium, zirconium, nickel, and/or tantalum, in such a way that the basic lattice is provided with vacant lattice positions by doping the basic lattice with adequate low-valent or higher-valent elements, said vacant lattice positions increasing the electronic polarizability of the microparticles by means of defect chemistry (the defect structure).
    • 本发明涉及一种涂覆电导体的组合物及其制备方法。 本发明的目的是创建一种用于涂覆电导体的组合物,其比现有技术组合物显着地更耐局部放电,而所制备的绝缘层是高度可延展的。 所述目的通过一种组合物来实现,所述组合物包含1至50重量%的在晶格中具有特别调节的电子缺陷结构的微粒,导致更高的价电子的极化率,以及有机和/或有机 - 无机基质。 具有特别调整的电子缺陷结构的微粒由作为包含硅,锌,铝,锡,硼,锗,镓,铅,硼,锗,镓,铅,过渡金属的一系列元素的元素的氧化物,硫化物,硒化物,碲化物组成, 镧系元素和锕系元素,特别是来自包括硅,钛,锌,钇,铈,钒,铪,锆,镍和/或钽的系列中,以使得通过掺杂 具有足够低价或更高价元素的碱性晶格,所述空位晶格位置通过缺陷化学(缺陷结构)提高微粒的电子极化率。