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    • 10. 发明公开
    • ArF 노광용 레지스트 조성물 및 그것을 사용한 패턴형성방법
    • 用于ARF曝光的耐蚀组合物和使用其形成图案的方法
    • KR1020130049795A
    • 2013-05-14
    • KR1020130048700
    • 2013-04-30
    • 후지필름 가부시키가이샤
    • 칸다히로미이나베하루키
    • G03F7/004G03F7/26H01L21/027
    • G03F7/039C07C69/54C08F214/18C08F220/22C08F220/26G03F7/0045G03F7/0046G03F7/0392G03F7/0395G03F7/0397G03F7/2041G03F7/322H01L21/0274Y10S430/106Y10S430/114Y10S430/146G03F7/26H01L21/027
    • PURPOSE: A resist composition for ArF exposure and the pattern formation method using the same are provided to suppress the development defect, the elution of the resist component to the scum and the immersion solution at the exposure in the immersion. CONSTITUTION: A resist composition for the ArF exposure comprises: a resin having the single ring type or the polycyclic ring type aliphatic hydrocarbon structure where the solubility increases in the alkaline developing solution by the action of the acid; a compound which generates the acid at the irradiation by any one of the active ray and the radiation; an alkali soluble compound having at least more than one of the fluorine atom; and a solvent. The resin and the alkali soluble compound do not include the polymeric compound having the unit A having ester group of the exo represented by chemical formula 1a, and the unit B having the ester group with two hexafluoroisopropanol groups represented by chemical formula 1b as the component to the molar ratio of 0.1
    • 目的:提供用于ArF曝光的抗蚀剂组合物和使用该抗蚀剂组合物的图案形成方法,以抑制显影缺陷,在浸渍时曝光时抗蚀剂组分对浮渣和浸渍溶液的洗脱。 构成:用于ArF曝光的抗蚀剂组合物包括:具有单环型或多环型脂族烃结构的树脂,其中通过酸的作用在碱性显影液中溶解度增加; 在活性射线和辐射中的任一种照射时产生酸的化合物; 具有至少多于一个氟原子的碱溶性化合物; 和溶剂。 树脂和碱溶性化合物不包括具有由化学式1a表示的具有酯的酯基的单元A的聚合化合物,具有由以化学式1b表示的两个六氟异丙醇基的酯基的单元B作为组分 抗蚀剂组合物中不同化合物的摩尔比为0.1 <= A /(A + B)<= 0.8和0.01 <= B /(A + B)<= 0.9。