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1. 发明公开

KR1020070117679A 붕소-도프된 실리콘 마이크로머신 구조물의 곡률 감소방법 无效
标题翻译：用于减少硼掺杂硅微孔结构中的曲线的方法
公开(公告)号：KR1020070117679A
公开(公告)日：2007-12-12
申请号：KR1020077024047
申请日：2001-08-07
申请人： 허니웰 인터내셔널 인코포레이티드
发明人： 카부즈클레오파트라 , 호닝로버트디. , 얼드만프란씨스엠. , 글렌맥스씨.
IPC分类号： B81B7/00
CPC分类号： B81C1/00365 , B81C2201/0164 , Y10T428/21 , Y10T428/2495
摘要： Layers of boron-doped silicon (36) having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near th etop (38) and bottom (40) surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers (36) are substantially balanced, thereby resulting in layers (36) with reduced out-of-plane curvature.
摘要翻译：公开了具有减小的平面外曲率的硼掺杂硅（36）的层。这些层在顶部（38）和底部（40）表面附近具有基本相等的硼浓度。由于相反的浓度基本相等，所以层（36）上的压缩应力基本平衡，从而导致具有减小的面外曲率的层（36）。

2. 发明公开

KR1020050121223A 차동식 전기 용량 픽 오프를 갖는 굽힘 빔 가속도계 无效
标题翻译：弯曲梁加速度计具有差分电容
公开(公告)号：KR1020050121223A
公开(公告)日：2005-12-26
申请号：KR1020057018105
申请日：2004-03-26
申请人： 허니웰 인터내셔널 인코포레이티드
发明人： 말라메츠데이비드엘. , 호닝로버트디. , 베카스테판에프.
IPC分类号： G01P15/125 , G01P15/08
CPC分类号： B81B3/0072 , B81B2201/0235 , G01P15/08 , G01P15/125 , G01P2015/0831
摘要： A low cost, pendulous, capacitive- sensing Micro Electro-Mechanical Systems (MEMS) accelerometer is provided. The accelerometer includes a pendulous proof mass, one or more securing pads, and one or more flexures coupled with the pendulous proof mass and the one or more securing pads. The flexures flex linearly with respect to motion of the pendulous proof mass. First and second capacitor plates are positioned relative to the pendulous proof mass for detecting motion of the proof mass according to a sensed difference in capacitance. One or more strain isolation beams are connected between the one or more flexures and the pendulous proof mass or the securing pads. The strain isolation beams protect the flexures from mechanical strain.
摘要翻译：提供了一种低成本，下摆的电容感应微机电系统（MEMS）加速度计。该加速度计包括防晕质量块，一个或多个固定垫，以及一个或多个弯曲件，其与防倒伏质量块和一个或多个固定垫结合。弯曲物相对于防倒体块的运动线性地弯曲。第一和第二电容器板相对于防倒伏质量块定位，用于根据感测到的电容差来检测检验质量块的运动。一个或多个应变隔离梁连接在一个或多个挠曲件和防倒冲质量块或固定垫之间。应变隔离梁保护挠曲免受机械应变。

3. 发明公开

KR1020090107932A 평면내 및 평면외 ＭＥＭＳ 장치로부터 가속 및 회전 판단을 위한 시스템 및 방법 无效
标题翻译：用于从平面内和平面外的MEMS器件加速和旋转测定的系统和方法
公开(公告)号：KR1020090107932A
公开(公告)日：2009-10-14
申请号：KR1020090028120
申请日：2009-04-01
申请人： 허니웰 인터내셔널 인코포레이티드
发明人： 호닝로버트디. , 수피노라이언
IPC分类号： B81B7/00 , G01P15/08
摘要： PURPOSE: A system and a method for determination of in-plane and out-of-plane acceleration and rotation using a MEMS sensor are provided to implement an inertial measuring unit using two inertia sensors, each of which senses the linear acceleration and rotation of two axes. CONSTITUTION: A method for determination of in-plane and out-of-plane acceleration and rotation using a MEMS sensor comprises a step of sensing out-of-plane linear acceleration of the MEMS sensor using a pair of first out-of-plane electrodes(106,108) and a pair of second out-of-plane electrodes(114,116), a step of sensing in-plane rotation of the MEMS sensor using the first out-of-plane electrodes and the second out-of-plane electrodes, a step of sensing in-plane linear acceleration of the MEMS sensor using first and second in-plane sensing computers, and a step of sensing out-of-plane rotation of the MEMS sensor is sensed the first and second in-plane sensing computers.
摘要翻译：目的：提供一种使用MEMS传感器确定平面内和平面外加速度和旋转的系统和方法，以实现使用两个惯性传感器的惯性测量单元，每个惯性传感器感测两个惯性传感器的线性加速和旋转轴。构成：使用MEMS传感器确定平面内和平面内加速度和旋转的方法包括使用一对第一面外电极感测MEMS传感器的平面外线性加速的步骤（106,108）和一对第二外部平面电极（114,116），使用第一平面外电极和第二平面外电极感测MEMS传感器的平面内旋转的步骤，使用第一和第二平面内感测计算机感测MEMS传感器的平面内线性加速度的步骤，以及感测MEMS传感器的平面外旋转的步骤，感测第一和第二平面内感测计算机。

4. 发明公开

KR1020030067658A 붕소-도프된 실리콘 마이크로머신 구조물의 곡률 감소방법 无效
标题翻译：减少硼掺杂硅微机械结构曲率的方法
公开(公告)号：KR1020030067658A
公开(公告)日：2003-08-14
申请号：KR1020037001885
申请日：2001-08-07
申请人： 허니웰 인터내셔널 인코포레이티드
发明人： 카부즈클레오파트라 , 호닝로버트디. , 얼드만프란씨스엠. , 글렌맥스씨.
IPC分类号： B81B7/00
CPC分类号： B81C1/00365 , B81C2201/0164 , Y10T428/21 , Y10T428/2495
摘要： 본 발명은 비평면적인 곡률이 감소된 붕소-도프된 실리콘층(36)을 개시한다. 상기 층은 실질적으로 상하부표면(38,40)부근에서 실질적으로 동일한 붕소농도를 갖는다. 이와 같이 대향하는 부분의 농도가 동일하므로, 상기 층(36)에서 발생되는 압축응력은 실질적으로 균형을 이룬다. 이로써, 비평면적인 곡률이 감소된 층(36)을 얻을 수 있다.

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