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    • 3. 发明公开
    • 실리콘카바이드 및 이의 제조방법
    • 碳化硅及其制造方法
    • KR1020110063040A
    • 2011-06-10
    • KR1020090119971
    • 2009-12-04
    • 한국세라믹기술원
    • 김영희김수룡권우택서무현이윤주
    • C01B31/36C04B35/565
    • C01B32/956C04B35/565C30B29/36
    • PURPOSE: A silicon carbide with a superior crystalline of high purity is provided have little residual carbon amount by using polycarbosilane and silicon nano powder and more specifically to have silicon carbide with a superior crystalline of high purity more effectively by using high temperature mobility of polycarbosilane. CONSTITUTION: The method of silicon carbide includes: the step(S1) in which polycarbosilane, and the silicon nano powder and solvent are mixed and polycarbosilane solution is manufactured; the step(S2) impregnating preform after the S1 step in the polycarbosilane solution; the insolubizing step(S3) thermosetting the preform impregnated after the S2 step in 300°C to 150 for half an hour to 1 hour; and the plastic step(S4) heat-treating the thermoset preform in 1200 to 1800°C for 1~3 hours after the S3 step.
    • 目的:通过使用聚碳硅烷和硅纳米粉末,提供具有高纯度的优异结晶的碳化硅具有很少的残留碳量,更具体地,通过使用聚碳硅烷的高温移动性更有效地使具有高纯度的高纯度的碳化硅。 构成:碳化硅的方法包括:制备聚碳硅烷,硅纳米粉末和溶剂混合的步骤(S1)和聚碳硅烷溶液; 步骤(S2)在S1步骤之后浸渍预聚物在聚碳硅烷溶液中; 不熔化步骤(S3)将在S2步骤之后浸渍的预成型体在300℃下热固化至150小时至1小时; (S4)在S3步骤后,将热固性预成型件在1200〜1800℃下热处理1〜3小时。