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    • 8. 发明公开
    • 고분자튜브 내면의 표면개질장치 및 이를 이용하는 표면개질방법.
    • 改性聚合物内壁表面的设备及其表面改性方法
    • KR1020160035682A
    • 2016-04-01
    • KR1020140126962
    • 2014-09-23
    • 한국생산기술연구원
    • 조용기문경일
    • C08J7/12C08J7/18C08J3/28B01J19/08
    • 진공과플라즈마방전기술을접목하여소구경고분자튜브의내면표면을친수성또는친유성(소수성)으로만드는반응성활성종의형성을수행하는것을특징으로하는고분자튜브내면의표면개질장치와표면개질방법에관한것이며, 고분자튜브와고분자튜브내면을진공상태로만드는진공형성부와고분자튜브내면에반응성활성종의형성을위한반응가스를공급하는반응가스공급부와반응가스를방전시켜플라즈마화하는기능을구비하는전극부와전극부에전압을인가하는전원부와고분자튜브를길이방향으로상대이동시키는기능을구비하는이송부를포함하여이루어지고, 고분자튜브의내면처리과정에서고분자튜브내면은밀폐공간이되는것을특징으로하는고분자튜브내면의표면개질장치및 이를이용하는표면개질방법을개시한다.
    • 本发明涉及一种用于改变聚合物管内表面的装置,其涉及形成反应性物质,其可以通过施加真空和等离子体来使聚合物管的内表面具有小口径亲水或亲水(疏水) 放电技术。 本发明还涉及一种表面改性方法。 更具体地,公开了一种用于改性聚合物管的内表面的装置和使用其的表面改性方法。 为此,本发明的装置包括:聚合物管; 在真空状态下形成聚合物管的内表面的真空成型部; 反应气体供给部,将反应气体供给到聚合物管的内表面,以形成反应性物质; 具有通过排出反应气体将反应气体转化为等离子体的功能的电极部件; 向所述电极部供电的供电部; 以及具有沿纵向方向相对转移聚合物管的功能的转印部分。 在内表面处理过程中,聚合物管的内表面被密封。
    • 10. 发明公开
    • 플라즈마를 이용한 질화방법 및 질화처리된 제품
    • 硝酸产品和等离子体浸渍方法
    • KR1020140022526A
    • 2014-02-25
    • KR1020120088613
    • 2012-08-13
    • 한국생산기술연구원
    • 박현준문경일변철웅김형준이승우
    • C23C8/24C23C16/50
    • The present invention relates to a nitrified product and a nitriding method by using plasma for replacing a nitiridation process of a bushing product with a nitridation process and a sulphurizing nitridation process processed in a clean plasma environment comprising: a pre-heating step for heating a specimen by charging the specimen to an inside of a furnace, and raising the temperature inside a furnace to a pre-heating process temperature in a vacuum atmosphere; a sputtering step for maintaining the pressure inside the furnace to a sputtering process pressure, and for ion etching a surface of the specimen while inserting Ar and H2 into an inside of the furnace; a soft nitriding step for maintaining pressure inside the furnace to a soft nitriding process pressure, and for inserting N2, H2, and carbon gas, and for forming a compound layer and a hardened layer on a surface of the specimen while applying a current to a screen net equipped in the specimen and an outside of the specimen; a sulfnitriding step for forming a sulfnitriding layer above a compound layer by inserting H2S after lowering the temperature inside a furnace to a sulfnitriding process temperature; and a cooling step for cooling the specimen by inserting N2 into an inside of a furnace. According to the configuration, a process can be simplified; work expenses can be saved through an environment-friendly process; whole product manufacturing costs can be reduced by replacing an expensive MoS2 process; and a problem of a post-process which is processed after salt bath nitriding can be solved by minimizing deformation after a plasma process. [Reference numerals] (AA) Sulfnitriding layer; (BB) Compound layer; (CC) Hardened layer; (DD) Specimen
    • 本发明涉及一种通过使用等离子体来替代在清洁等离子体环境中加工的氮化工艺和硫化氮化工艺的套管产品的氮化过程的硝化产物和氮化方法,包括:用于加热样品的预热步骤 通过将试样装入炉内,将炉内的温度提高到真空气氛中的预热处理温度; 用于将炉内的压力维持在溅射工艺压力下的溅射步骤,以及用于在将Ar和H 2插入炉内的同时离子蚀刻样品的表面; 用于将炉内的压力维持在柔软的氮化处理压力上的软氮化步骤,以及用于插入N 2,H 2和碳气,以及在试样的表面上形成化合物层和硬化层,同时向 试样上装有筛网,试样外面; 一种用于通过在将炉内的温度降低到硫氮化处理温度之后通过插入H 2 S在化合物层上方形成硫氮化层的硫氮化步骤; 以及冷却步骤,用于通过将N2插入炉内而冷却试样。 根据该结构,能够简化处理。 可以通过环保过程节省工作费用; 通过更换昂贵的MoS2工艺可以降低整个产品制造成本; 并且可以通过使等离子体处理后的变形最小化来解决在盐浴氮化后处理的后处理的问题。 (附图标记)(AA)磺化氮化层; (BB)化合物层; (CC)硬化层; (DD)标本