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1. 发明公开

KR1020130142956A 탄소 주입 동안 이온 소스 수명의 연장 및 이온 소스 성능의 개선을 위한 방법 审中-实审
标题翻译：用于延长离子源寿命的方法和改进碳源植入过程中的离子源性能
公开(公告)号：KR1020130142956A
公开(公告)日：2013-12-30
申请号：KR1020130070276
申请日：2013-06-19
申请人： 프랙스에어 테크놀로지, 인코포레이티드 , 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
发明人： 싱하애쉬위니케이 , 브라운로이드에이 , 캠퓨서지 , 바썸네일제이 , 스포리더데이빗
IPC分类号： H01J37/317 , H01J37/08
CPC分类号： H01L21/322 , C23C14/48 , C23C14/564 , H01L29/36
摘要： Provided are a method and a system for extending the life of an ion source and improving the performance of the ion source during carbon implantation. Concretely a carbon ion implantation process includes a step of using a dopant gas mixture having carbon monooxide and one or more sort of fluorine-contained gas with carbon expressed as a chemical equation CxFy where x and y are equal to or more than 1. One or more sort of the fluorine-contained gas with carbon included in the mixture has approximately 3-12 vol% of the dopant gas mixture. Fluorine ions, radicals or their combination are radiated from the ionized dopant gas mixture, and reacts with a deposit substantially induced from the carbon along at least one among a repeller, an extraction electrode and the surface of the chamber so the total amount of the deposit is reduced. By using the method, a single dopant gas mixture can provide carbon ions, and can eliminate the deposit being generated during the carbon implantation which is a wide range problem typically encountered. [Reference numerals] (AA) Schematic diagram of an ion source device
摘要翻译：提供了一种用于延长离子源的寿命并改善碳注入期间离子源的性能的方法和系统。具体地，碳离子注入工艺包括使用具有一氧化碳和一种或多种含氟气体的掺杂剂气体混合物的步骤，其中表示为化学方程式CxFy，其中x和y等于或大于1。包含在混合物中的更多类型的含氟气体具有约3-12体积％的掺杂剂气体混合物。氟离子，自由基或它们的组合从离子化的掺杂气体混合物中辐射，并且与从排斥体，提取电极和室的表面中的至少一个基本上从碳中诱导的沉积物反应，因此沉积物的总量降低了。通过使用该方法，单个掺杂剂气体混合物可以提供碳离子，并且可以消除在碳注入期间产生的沉积物，这是通常遇到的宽范围问题。（附图标记）（AA）离子源装置的示意图

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