专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明公开

KR1020060058149A 적외선 방사 소자 및 이를 이용한 가스 센서 失效
标题翻译：红外发光装置和使用相同的气体传感器
公开(公告)号：KR1020060058149A
公开(公告)日：2006-05-29
申请号：KR1020067008002
申请日：2004-10-27
申请人： 파나소닉 전공 주식회사
发明人： 이치하라쓰토무 , 하마다초세이 , 아케도코시 , 기타무라히로아키 , 후크시마히로시 , 고모다다쿠야 , 하타이다카시
IPC分类号： H05B3/26 , H01K1/04
CPC分类号： H01L37/00 , H05B3/009 , H05B3/265 , H05B2203/032
摘要： Disclosed is an infrared light emitting device (A) comprising a semiconductor substrate (1), a heat insulating layer (2) having a heat conductivity sufficiently lower that that of the semiconductor substrate (1) and formed on one surface of the semiconductor substrate (1) in the thickness direction, a lamellar heating layer (3) having a heat conductivity and electrical conductivity higher than those of the heat insulating layer (2) and formed on the heat insulating layer (2), and a pair of pads (4, 4) formed on the heating layer (3) for electrical conduction. The semiconductor substrate (1) is composed of a silicon substrate. The heat insulating layer (2) and the heating layer (3) are composed of porous silicon layers having different porosities, and the porous silicon layer for the heating layer (3) has a lower porosity than that for the heat insulating layer (2). By using such an infrared light emitting device (A) as the infrared radiation source in a gas sensor, there can be realized an infrared radiation source having a prolonged life.
摘要翻译：公开了一种红外线发光器件（A），其包括半导体衬底（1），绝热层（2），其热导率足够低于半导体衬底（1）的热导率并形成在半导体衬底的一个表面上 1），在隔热层（2）上形成具有比绝热层（2）的导热性和导热性高的导热性和导电性的层状加热层（3），以及一对焊盘（4），4）形成在加热层（3）上用于导电。半导体衬底（1）由硅衬底构成。绝热层（2）和加热层（3）由具有不同孔隙率的多孔硅层构成，并且用于加热层（3）的多孔硅层的孔隙率低于隔热层（2）的孔隙率，。通过在气体传感器中使用红外线发射装置（A）作为红外辐射源，可以实现寿命延长的红外线辐射源。

IPRDB

热门服务

关于我们

友情链接

联系方式