专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

KR1020030020611A 고 전압 써지 저항기 및 그 제조방법 失效
标题翻译：高电压浪涌电阻器及其制造方法
公开(公告)号：KR1020030020611A
公开(公告)日：2003-03-10
申请号：KR1020010054007
申请日：2001-09-04
申请人： 코웰패션 주식회사
发明人： 김종대 , 민화식 , 차병선
IPC分类号： H01C7/00
摘要： PURPOSE: A high voltage surge resistor and a method for manufacturing the same are provided to extend the range of resistance value and stabilize the film thickness by depositing the film of the resistor through the three stages. CONSTITUTION: A method for manufacturing films of a high voltage surge resistor comprises a first step of forming a first layer made of a metal containing chrome and silicon on a ceramic element, while injecting argon and nitrogen gases under a vacuum atmosphere; a second step of forming a second layer on the first layer, while injecting only the argon gas under a vacuum atmosphere; and a third step of forming a third layer on the second layer, while injecting argon and nitrogen gases under a vacuum atmosphere.
摘要翻译：目的：提供一种高电压浪涌电阻及其制造方法，以通过三段沉积电阻器的膜来延长电阻值的范围和稳定膜的厚度。构成：用于制造高压浪涌电阻膜的方法包括在真空气氛中注入氩气和氮气的同时在陶瓷元件上形成由含有铬和硅的金属制成的第一层的第一步骤; 在第一层上形成第二层的同时在真空气氛下只注入氩气的第二步骤; 以及在真空气氛下注入氩气和氮气的同时在第二层上形成第三层的第三步骤。

2. 发明授权

KR100407520B1 고 전압 써지 저항기 및 그 제조방법 失效
标题翻译： 고전압써지저항기및그제조방법
公开(公告)号：KR100407520B1
公开(公告)日：2003-11-28
申请号：KR1020010054007
申请日：2001-09-04
申请人： 코웰패션 주식회사
发明人： 김종대 , 민화식 , 차병선
IPC分类号： H01C7/00
摘要： PURPOSE: A high voltage surge resistor and a method for manufacturing the same are provided to extend the range of resistance value and stabilize the film thickness by depositing the film of the resistor through the three stages. CONSTITUTION: A method for manufacturing films of a high voltage surge resistor comprises a first step of forming a first layer made of a metal containing chrome and silicon on a ceramic element, while injecting argon and nitrogen gases under a vacuum atmosphere; a second step of forming a second layer on the first layer, while injecting only the argon gas under a vacuum atmosphere; and a third step of forming a third layer on the second layer, while injecting argon and nitrogen gases under a vacuum atmosphere.
摘要翻译：目的：提供一种高压浪涌电阻器及其制造方法，以通过三级沉积电阻器的膜来扩大电阻值的范围并稳定膜厚度。用于制造高压浪涌电阻器的薄膜的方法包括以下步骤：在真空气氛下注入氩气和氮气的同时，在陶瓷元件上形成由含铬和硅的金属制成的第一层; 在第一层上形成第二层，同时在真空环境下仅注入氩气的第二步骤; 以及在真空气氛下注入氩气和氮气的同时在第二层上形成第三层的第三步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式