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1. 发明授权

KR101538386B1 반도체 소자의 금속배선 형성방법 有权
标题翻译：制造半导体器件金属布线的方法
公开(公告)号：KR101538386B1
公开(公告)日：2015-07-22
申请号：KR1020080134033
申请日：2008-12-26
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L21/768 , H01L21/302
CPC分类号： H01L21/76816 , H01L21/02063 , H01L21/76807 , H01L2221/1063 , Y10S438/906
摘要： 실시예에다른반도체소자의금속배선형성방법은, 반도체기판에하부배선및 하부절연층을형성하는단계; 상기하부절연층상에식각정지막을형성하는단계; 상기식각정지막상에상부절연층을형성하는단계; 상기하부배선에대응하는상기식각정지막이노출되도록제1 비아홀을형성하는단계; 상기제1 비아홀에의하여노출된상기식각정지막을선택적으로제거하는 1차식각공정에의하여상기하부배선을노출시키는제2 비아홀을형성하는단계; 상기제2 비아홀에대하여케미컬을이용한세정공정을진행하며, 상기세정공정시상기하부배선의표면에폴리머가형성되는단계; 휘발성가스를이용한 2차식각공정에의하여상기폴리머를제거하여상기제2 비아홀을노출시키는단계; 상기제2 비아홀의표면을따라배리어막을형성하는단계; 및상기제2 비아홀이갭필되도록상기배리어막상에상부배선을형성하는단계를포함한다.

2. 发明公开

KR1020100077989A 반도체 소자의 금속 배선 형성 방법 无效
标题翻译：形成半导体器件金属线的方法
公开(公告)号：KR1020100077989A
公开(公告)日：2010-07-08
申请号：KR1020080136090
申请日：2008-12-29
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L21/28 , H01L21/302
CPC分类号： H01L21/02063 , H01L21/76807 , H01L21/76814
摘要： PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to improve the yield and reliability of a product by preventing a void when a diffusion prevention film and a metal wiring are formed. CONSTITUTION: An interlayer insulation film is formed on a semiconductor substrate. A first photo resist pattern is formed on the interlayer insulation film. A trench is formed by etching the interlayer insulation film using the first photo resist pattern(30). The first photo resist pattern is removed by an ashing process(32). The residue in the trench is firstly removed by a first cleaning solution(34). The reside after a first cleaning process is secondly removed by a second cleaning solution(36).
摘要翻译：目的：提供一种用于形成半导体器件的金属布线的方法，通过防止形成防扩散膜和金属布线时的空隙来提高产品的成品率和可靠性。构成：在半导体衬底上形成层间绝缘膜。在层间绝缘膜上形成第一光刻胶图形。通过使用第一光致抗蚀剂图案（30）蚀刻层间绝缘膜来形成沟槽。第一光刻胶图案通过灰化处理（32）去除。首先通过第一清洗溶液（34）除去沟槽中的残留物。在第一清洁过程之后的居住由第二清洁溶液（36）第二次除去。

3. 发明公开

KR1020100076247A 이미지센서 및 그 제조방법 无效
标题翻译：图像传感器及其制造方法
公开(公告)号：KR1020100076247A
公开(公告)日：2010-07-06
申请号：KR1020080134213
申请日：2008-12-26
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/1462 , H01L27/14685 , H01L27/14687
摘要： PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent damage or contamination of a pad during formation of a color filter by forming a protective layer of low-temperature oxide film on the upper side of a photo diode and a pad region. CONSTITUTION: A semiconductor substrate(100) comprises a pixel section(A) and a peripheral section(B). An interlayer insulation layer(160) comprises metal wiring(150) connected to the pixel section and a pad(170) connected to the peripheral section. An image sensing part(200) is formed on the interlayer insulation layer corresponding to the pixel section. A protective pattern(255) is formed on the image sensing part. A color filter(260) is formed on the protective pattern. A planarization layer(275) is formed on the color filter.
摘要翻译：目的：提供一种图像传感器及其制造方法，以在光电二极管和焊盘区域的上侧形成低温氧化膜保护层，以防止在形成滤色器期间损坏或污染焊盘。构成：半导体衬底（100）包括像素部分（A）和周边部分（B）。层间绝缘层（160）包括连接到像素部分的金属布线（150）和连接到周边部分的焊盘（170）。在对应于像素部分的层间绝缘层上形成图像感测部分（200）。在图像感测部上形成保护图案（255）。在保护图案上形成滤色器（260）。在滤色器上形成平坦化层（275）。

4. 发明公开

KR1020100076102A 반도체 소자의 금속배선 형성방법 有权
标题翻译：制造半导体器件金属接线的方法
公开(公告)号：KR1020100076102A
公开(公告)日：2010-07-06
申请号：KR1020080134033
申请日：2008-12-26
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L21/768 , H01L21/302
CPC分类号： H01L21/76816 , H01L21/02063 , H01L21/76807 , H01L2221/1063 , Y10S438/906
摘要： 실시예에다른반도체소자의금속배선형성방법은, 반도체기판에하부배선및 하부절연층을형성하는단계; 상기하부절연층상에식각정지막을형성하는단계; 상기식각정지막상에상부절연층을형성하는단계; 상기하부배선에대응하는상기식각정지막이노출되도록제1 비아홀을형성하는단계; 상기제1 비아홀에의하여노출된상기식각정지막을선택적으로제거하는 1차식각공정에의하여상기하부배선을노출시키는제2 비아홀을형성하는단계; 상기제2 비아홀에대하여케미컬을이용한세정공정을진행하며, 상기세정공정시상기하부배선의표면에폴리머가형성되는단계; 휘발성가스를이용한 2차식각공정에의하여상기폴리머를제거하여상기제2 비아홀을노출시키는단계; 상기제2 비아홀의표면을따라배리어막을형성하는단계; 및상기제2 비아홀이갭필되도록상기배리어막상에상부배선을형성하는단계를포함한다.
摘要翻译：目的：提供一种用于半导体器件的金属布线形成方法，通过使用挥发性气体除去残留在通孔内的聚合物来消除通孔中的颗粒和粗糙表面的问题。构成：在半导体衬底（10）中形成下布线（30）和下层绝缘层（20）。蚀刻停止层（40）形成在下面的绝缘层上。在蚀刻停止层上形成上绝缘层（50）。形成露出蚀刻停止层的第一通孔和暴露下部布线的第二通孔。执行使用化学品的第二通孔的清洁处理。在清洁过程中形成在下布线表面的聚合物通过使用挥发性气体的蚀刻工艺除去。

5. 发明公开

KR1020100071438A 시스템 인 패키지 제조 방법 无效
标题翻译：制造系统的方法
公开(公告)号：KR1020100071438A
公开(公告)日：2010-06-29
申请号：KR1020080130154
申请日：2008-12-19
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L21/77 , H01L21/768
CPC分类号： H01L25/50 , H01L21/02043 , H01L21/76898 , H01L23/3677 , H01L24/30 , H01L2224/29111 , H01L2224/81801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/0132 , H01L2924/14 , H01L2924/19041 , H01L2924/19042
摘要： PURPOSE: A method for manufacturing a system-in-package is provided to improve surface uniformity inside a deep contact hole by surface-processing a deep contact hole using tetramethyl ammonium hydroxide. CONSTITUTION: A first chip(100) comprises a first substrate region(110) and a first metal connection unit(115). A second chip(200) comprises a second substrate region(120) and a second metal connection unit(117). A second chip is stacked on a first chip by bonding the first metal connection unit with the second metal connection unit. A deep contact hole(135) is formed by etching the second substrate region. The surface of the deep contact hole is processed by using tetramethyl ammonium hydroxide.
摘要翻译：目的：提供一种制造系统级封装的方法，以通过使用四甲基氢氧化铵表面处理深接触孔来改善深接触孔内的表面均匀性。构成：第一芯片（100）包括第一衬底区域（110）和第一金属连接单元（115）。第二芯片（200）包括第二基板区域（120）和第二金属连接单元（117）。通过将第一金属连接单元与第二金属连接单元接合来将第二芯片堆叠在第一芯片上。通过蚀刻第二基板区域形成深接触孔（135）。深接触孔的表面用四甲基氢氧化铵处理。

6. 发明公开

KR1020090070456A 이미지센서 제조 방법 无效
标题翻译：制造图像传感器的方法
公开(公告)号：KR1020090070456A
公开(公告)日：2009-07-01
申请号：KR1020070138473
申请日：2007-12-27
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , G03F7/422 , H01L27/14632 , H01L27/14685
摘要： A method for manufacturing an image sensor is provided to prevent the lowering of the reliability of a microlens formation process due to a polymer residue remaining on a pad region by performing a TV(Terminal Via) formation process to open the pad region of a metal layer after forming the microlens. A nitride barrier(110a) for passivation and a TEOS(Tetra Ethyl Ortho Silicate) film(120a) are successively deposited on a metal layer(100). A color filter(130) is formed in a pixel region. A planarization film(150) having a step on a semiconductor substrate is formed by including a color filter. A microlens(160) is formed on a planarization film of the pixel region. A photoresist pattern for forming a terminal via is formed on the planarization film including the microlens. The terminal via is formed by performing the etching using the photoresist pattern as a mask.
摘要翻译：提供一种用于制造图像传感器的方法，以通过执行TV（终端Via）形成处理来打开金属层的焊盘区域来防止由于残留在焊盘区域上的聚合物残留物而导致的微透镜形成过程的可靠性降低形成微透镜后。用于钝化的氮化物屏障（110a）和TEOS（四乙基原硅酸盐）膜（120a）被依次沉积在金属层（100）上。在像素区域中形成滤色器（130）。通过包括滤色器形成在半导体衬底上具有台阶的平坦化膜（150）。在像素区域的平坦化膜上形成微透镜（160）。在包括微透镜的平坦化膜上形成用于形成端子通孔的光致抗蚀剂图案。通过使用光致抗蚀剂图案作为掩模进行蚀刻来形成端子通孔。

7. 发明授权

KR100875168B1 반도체 소자의 금속배선 잔류 폴리머 제거방법 失效
标题翻译：在半导体器件的金属中去除聚合物残留的方法
公开(公告)号：KR100875168B1
公开(公告)日：2008-12-22
申请号：KR1020070075046
申请日：2007-07-26
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L21/28 , H01L21/304
CPC分类号： H01L21/02071 , Y10T29/41
摘要： The method of removing the residue polymer of the metal wiring in the semiconductor device is provided to remove residue polymer without the damage of metal wiring line by irradiating ultraviolet after removing residual photoresist strip of the metal layer. The metal wiring residue method of removing polymer of the semiconductor device comprises as follows. A step(S202) is for forming the TiOx layer on the surface of metal layer using one or more of Ti and TiN on the sub-layer. A step(S204) is for patterning the photosensitive film to form the photosensitive film on the metal layer. A step(S206) is for forming the metal wiring by ion-etching selectively the metal layer using the etching barrier wall as the patterned photosensitive film. A step is for removing the residual photosensitive film of the metal wiring upper part. A step(S207) is for oxidizing the surface of the metal wiring to C-O and H-O bond by irradiating the ultraviolet ray using the TiOx layer as the photocatalyst layer. A step is for washing the metal wiring in which the ultraviolet ray is irradiated(S208).
摘要翻译：提供了去除半导体器件中的金属布线的残留聚合物的方法，以在除去金属层残留的光致抗蚀剂带之后，通过照射紫外线来除去残留聚合物而不会损坏金属布线。除去半导体器件的聚合物的金属布线残留方法如下。步骤（S202）用于在子层上使用Ti和TiN中的一种或多种在金属层的表面上形成TiO x层。步骤（S204）用于图案化感光膜以在金属层上形成感光膜。步骤（S206）用于通过使用蚀刻阻挡壁作为图案化感光膜选择性地对金属层进行离子蚀刻来形成金属布线。步骤是去除金属布线上部残留的感光膜。步骤（S207）是通过使用TiOx层作为光催化剂层照射紫外线来将金属配线的表面氧化为C-O和H-O键。步骤是洗涤照射紫外线的金属布线（S208）。

8. 发明授权

KR100872711B1 칩적층 구조물 및 이의 제조 방법 失效
标题翻译：芯片堆叠结构及其制造方法
公开(公告)号：KR100872711B1
公开(公告)日：2008-12-05
申请号：KR1020070065058
申请日：2007-06-29
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L23/12
CPC分类号： H01L24/81 , H01L23/3114 , H01L23/3171 , H01L23/3185 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/11827 , H01L2224/13005 , H01L2224/13013 , H01L2224/13014 , H01L2224/13025 , H01L2224/131 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16146 , H01L2224/2518 , H01L2224/81002 , H01L2224/81011 , H01L2224/81191 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/00
摘要： A method of manufacturing the chip lamination structure is provided to improve the durability against the physical impact because the lamination structure is stronger than the harizon structure. The chip lamination structure comprises the first chip(100), and the second chip(200) and the connection element. The first chip comprises the first silicon wafer(110), the first semiconductor device(120), the first insulating layer(131), the first vertical distributing(141), the first horizontal wiring(151), the second insulating layer(132), the second vertical distributing(142), the second horizontal wiring(152), the third dielectric polish layer(133), the first penetrating electrode(160) and the first connection pad(161). The second chip is faced to the first chip and is separated from. The connection element is interposed between the first chip and the second chip. The connection element is interposed between the first connection pad and the second connection pad(261).
摘要翻译：提供了一种制造芯片层叠结构的方法，以提高对物理冲击的耐久性，因为层压结构比harizon结构更强。芯片层叠结构包括第一芯片（100）和第二芯片（200）以及连接元件。第一芯片包括第一硅晶片（110），第一半导体器件（120），第一绝缘层（131），第一垂直分布（141），第一水平布线（151），第二绝缘层（132）），第二垂直分布（142），第二水平布线（152），第三介电抛光层（133），第一穿透电极（160）和第一连接焊盘（161）。第二个芯片面临着第一个芯片，与之分开。连接元件介于第一芯片和第二芯片之间。连接元件插入在第一连接焊盘和第二连接焊盘（261）之间。

9. 发明公开

KR1020080101190A 이미지센서의 제조방법 无效
标题翻译：制造图像传感器的方法
公开(公告)号：KR1020080101190A
公开(公告)日：2008-11-21
申请号：KR1020070047598
申请日：2007-05-16
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14627 , H01L27/14685
摘要： The property of the oxide layer microlens can be improved. The gap between the micro lens can be minimized. The method of manufacturing the image sensor is provided. A step is for forming an interlayer dielectric layer(130) on the substrate(110) including a photo diode(120). A step is for forming the color filter layer(140) on the interlayer dielectric layer. A step is for forming the oxide film(160) on the color filter layer by using a dopant as the nitrogen gas. A step is for forming a plurality of photosensitive patterns having the predetermined interval on the oxide film. A step is for forming the oxide layer microlens having the constant curvature by etching the oxide film using the photosensitive pattern as a mask.
摘要翻译：可以改善氧化物层微透镜的性质。微透镜之间的间隙可以最小化。提供了图像传感器的制造方法。步骤是在包括光电二极管（120）的衬底（110）上形成层间电介质层（130）。步骤是在层间电介质层上形成滤色器层（140）。通过使用掺杂剂作为氮气，在滤色器层上形成氧化膜（160）的步骤。步骤是在氧化膜上形成具有预定间隔的多个光敏图案。通过使用感光图案作为掩模蚀刻氧化膜，形成具有恒定曲率的氧化物层微透镜的步骤。

10. 发明授权

KR100867093B1 시스템 인 패키지의 웨이퍼 적층방법 失效
标题翻译：包装系统的散热堆叠方法
公开(公告)号：KR100867093B1
公开(公告)日：2008-11-04
申请号：KR1020070100746
申请日：2007-10-08
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L23/12 , H01L23/48 , H01L21/60
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： A wafer stacking method of system in package is provided to enhance an adhesive property between cooper and aluminum interfaces by deforming a metallic surface into metal having a hydrophobe property, thereby stabilizing an SIP(System in Package) process and increasing production rate and reliability. A wafer stacking method of system in package comprises the steps of: forming a via contact(20), which is made of cooper, to electrically connect semiconductor devices; plasma-treating an aluminum surface on which aluminum is deposited; forming a bonding pad(30) at an upper part of the via contact by a photographing/etching process; plasma-treating a surface of another wafer on which a via contact made of cooper is formed; and contacting wafers.
摘要翻译：提供了一种系统在包装中的晶片堆叠方法，以通过使金属表面变形成具有疏水性的金属来增强铜和铝界面之间的粘合性，从而稳定SIP（系统封装）工艺并提高生产率和可靠性。包装系统的晶片堆叠方法包括以下步骤：形成由铜制成的通孔接触件（20）以电连接半导体器件; 对其上沉积铝的铝表面进行等离子体处理; 通过摄影/蚀刻工艺在通孔接触件的上部形成接合焊盘（30）; 等离子体处理形成有由铜制成的通孔接触的另一晶片的表面; 并接触晶片。

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