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    • 3. 发明公开
    • 터치 패널 및 그 제조 방법
    • 触控面板及其制造方法
    • KR1020150051393A
    • 2015-05-13
    • KR1020130132767
    • 2013-11-04
    • 주식회사 디비하이텍
    • 김한경송현김영욱홍원철송준마애영고종환이진아
    • G06F3/044
    • H03K17/9618G02F1/00G06F3/0412G06F3/044H01L21/00H03K2017/9613H03K2217/96015
    • 본발명의실시예에따른터치패널은, 필름및 유리로이루어진투명기판, 상기투명기판의상면에증착되는 Tx 패턴층과, 상기 Tx 패턴층의하면또는상면에증착되는 Rx 패턴층을포함하는패널로서, 상기 Tx 패턴층은, Y축좌표값을감지하는다수의 Tx 전극패턴과, 상기 Tx 전극패턴을 FPCB와연결하는다수개의 Tx 메탈배선으로이루어지며, 상기 Rx 패턴층은, X축좌표값을감지하는다수의 Rx 전극패턴과, 상기 Rx 전극패턴을상기 FPCB와연결하는다수개의 Rx 메탈배선으로이루어지고, 상기 Tx 메탈배선은상기 Tx 전극패턴의일단에연결되어상기투명전극의측면과후면으로연장되고, 상기 Rx 메탈배선은상기 Rx 전극패턴의일단에연결되어상기투명전극의측면과후면으로연장되는것을특징으로한다. 따라서, Tx 패턴층과 Rx 패턴층에연결되는메탈배선을투명기판의측면과후면으로우회하여 FPCB에연결함으로써, 비활성영역인베젤의폭을감소시킬수 있다.
    • 根据本发明的触摸面板包括:透明基板,其包括膜和玻璃; 沉积在透明衬底上的Tx图案层; 以及沉积在Tx图案层的下表面或上表面上的Rx图案层。 Tx图案层包括能够感测Y轴的坐标值的多个Tx电极图案和将Tx电极图案连接到FPCB的多个Tx金属线。 Rx图案层包括能够感测X轴的坐标值的多个Rx电极图案,以及将Rx电极图案连接到FPCB的多个Rx金属线。 Tx金属线连接到Tx电极图案的一端,以便延伸到透明电极的侧面和后侧。 Rx金属线连接到Rx电极板的一端,以便延伸到透明电极的侧面和后侧。 因此,本发明可以通过将透明的透明体的侧面和背面旁边来将连接到Tx图案层和Rx图案层的金属线连接到FPCB来减小作为非有效区域的边框的宽度 基质。
    • 4. 发明公开
    • 터치 스크린 패널
    • 触摸屏面板
    • KR1020140108999A
    • 2014-09-15
    • KR1020130023048
    • 2013-03-04
    • 주식회사 디비하이텍
    • 이진아송현김영욱홍원철송준마애영고종환김한경
    • G06F3/041
    • G06F3/044G06F2203/04103H05K1/0289H05K1/0306H05K3/467H05K2201/0108Y10T29/49105G06F3/041H05K3/0011
    • According to an embodiment of the present invention, a touchscreen panel is to recognize a touch by a user from electrodes arranged to cross each other on X and Y axes. The touchscreen panel includes: a transparent substrate; driving lines formed on the transparent substrate; a sensing pattern formed on the transparent substrate; an insulating layer formed on the transparent substrate and the driving lines; sensing lines formed on the insulating layer, and arranged in a direction perpendicular to the driving lines; and trace lines connected to each of the driving lines and each of the sensing lines, wherein an end of one side of the sensing line is connected to the sensing pattern. The touchscreen panel as proposed above can significantly reduce the possibility of disconnection of a wire by forming, on a same horizontal surface, the trace lines formed to receive an electric signal from the driving lines and the sensing lines arranged to cross each other, wires, etc.
    • 根据本发明的实施例,触摸屏面板将识别用户从X和Y轴上彼此交叉布置的电极的触摸。 触摸屏面板包括:透明基板; 形成在透明基板上的驱动线; 形成在所述透明基板上的检测图案; 形成在所述透明基板和所述驱动线上的绝缘层; 形成在所述绝缘层上并且沿垂直于所述驱动线的方向布置的传感线; 以及连接到每个驱动线和每个感测线的迹线,其中感测线的一侧的端部连接到感测图案。 如上所述的触摸屏面板可以通过在相同的水平表面上形成用于接收来自驱动线和布置成彼此交叉的感测线的电信号而形成的迹线,从而显着降低线的断开的可能性, 等等
    • 7. 发明公开
    • CMP장치
    • 化学机械抛光装置
    • KR1020100076220A
    • 2010-07-06
    • KR1020080134178
    • 2008-12-26
    • 주식회사 디비하이텍
    • 고종환
    • B24B37/00B24B37/04H01L21/304
    • B24B37/04B24B41/06
    • PURPOSE: A CMP(Chemical Mechanical Polishing) apparatus is provided to polish a wafer with the polished surface faced upward, thereby removing the need for turning the wafer upside down. CONSTITUTION: A CMP apparatus(100) comprises a polishing platen(110), a mounting unit(120), and a polishing head(130). The polishing platen is rotated with a rotational driving unit(111). The mounting unit is installed on the upper side of the polishing platen. A wafer(W) is installed in the mounting unit with a polished surface(P) exposed upward. The polishing head is installed on the top of the polishing platen to rotate a polishing pad(131) and polish the polished surface of the wafer.
    • 目的:提供CMP(化学机械抛光)设备,抛光抛光面朝上的晶片,从而不需要将晶片倒置。 构造:CMP设备(100)包括抛光台(110),安装单元(120)和抛光头(130)。 研磨台板用旋转驱动单元(111)旋转。 安装单元安装在研磨台板的上侧。 晶片(W)安装在安装单元中,抛光表面(P)向上露出。 研磨头安装在研磨台板的顶部上以旋转抛光垫(131)并抛光晶片的抛光表面。
    • 8. 发明公开
    • 웨이퍼의 화학기계적 연마장치 및 연마방법
    • 化学机械抛光的设备及方法
    • KR1020090056586A
    • 2009-06-03
    • KR1020070123803
    • 2007-11-30
    • 주식회사 디비하이텍
    • 고종환
    • B24B49/00H01L21/304B24B37/04
    • B24B49/02H01L21/304
    • An apparatus and method of chemical mechanical polishing of a wafer are provided to polish exactly a wafer up to an intended target by measuring the thickness of an insulator before and after a CMP process, and correcting polishing time. An apparatus and method of chemical mechanical polishing of a wafer an HCLU(Head Cup Loading Unloading)(10) on which a wafer to be polished chemically and mechanically rests; a first platen(20), a second platen(30), a third platen(40) performing chemical mechanical polishing against a wafer; a cleaner(50) eliminating particle deposited on the wafer after performing chemical mechanical polishing; an insulator thickness measuring device, a central processing unit(60) determining the chemical mechanical polishing time based on the result measured from the insulator thickness measuring device; and a control part(70) controlling the polishing time of the first platen, the second platen, and the third platen based on the time determined by the central processing unit.
    • 提供晶片的化学机械抛光的装置和方法,通过在CMP处理之前和之后测量绝缘体的厚度和校正抛光时间来精确地抛光晶片直到预期目标。 化学机械抛光晶片的化学机械抛光的装置和方法HCLU(头杯装载卸载)(10),待抛光的晶片化学和机械放置在其上; 第一压板(20),第二压板(30),对晶片执行化学机械抛光的第三压板(40) 在进行化学机械抛光之后清除(5​​0)消除沉积在晶片上的颗粒; 绝缘体厚度测量装置,基于从绝缘体厚度测量装置测量的结果确定化学机械抛光时间的中央处理单元; 以及基于由中央处理单元确定的时间来控制第一压板,第二压板和第三压板的抛光时间的控制部分(70)。