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2. 发明授权

KR1019900008146B1 반도체 정류기 및 그 제조방법 失效
标题翻译：半导体整流器和制造方法
公开(公告)号：KR1019900008146B1
公开(公告)日：1990-11-03
申请号：KR1019860008238
申请日：1986-09-30
申请人： 제너럴 인스트루먼트 코포레이션
发明人： 아인토벤지.윌렘 , 미첼엠.무니
IPC分类号： H01L29/00
CPC分类号： H01L29/66136 , H01L29/0661 , H01L29/36 , H01L29/8613 , Y10S438/965 , Y10S438/978
摘要： Rectifying semiconductor comprises (i) forming mesa shape in at least one layer of rectifying semiconductor junction with top of mesa at top surface of layer and side wall of mesa sloping outwardly from top towards junction, (ii) forming high concn. semiconductor region in top surface of layer. Region has the same conductivity type as layer and covers area extending entirely across top of mesa to intersect mesa side wall and (iii) driving high concn. region from top of mesa deeper into layer but not beyond mesa base. Outward slope of mesa geometry should cause high concn. region to take concave shape as it penetrates into mesa with distance bewteen high concn. region and junction being greater at intersection of region with sloping mesa walls than in central portion of mesa.
摘要翻译：整流半导体包括（i）在至少一层整流半导体结中形成台面形状，其中，顶层顶部的台面顶部和顶部向结合部向外倾斜的台面侧壁，（ii）形成高浓度半导体区域在顶层表面。区域具有与层和覆盖区域相同的导电类型，其完全跨越台面的顶部延伸以与台面侧壁相交，以及（iii）驱动高浓度。区域从台面的顶部深入层，但不超过台面基。台面几何的向外斜率应该导致高的浓度。区域采取凹形，因为它渗透到距离十五高的台面。区域和接合处在与倾斜台面壁的交点处比在台面的中心部分更大。

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