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    • 8. 发明公开
    • 반도체 레이저의 광전력 및 소광비 제어
    • 控制光功率和半导体激光的放射比
    • KR1020080070019A
    • 2008-07-29
    • KR1020087012098
    • 2006-11-15
    • 인텔 코포레이션
    • 왕,프랭크리우,치엔-창쳉,헹주수,리
    • H01S5/0683
    • H01S5/0683G02B6/4204H01S5/02212H01S5/02284H01S5/0617H01S5/06832H04B10/564
    • Disclosed herein are methods, apparatus, and systems to achieve substantially constant optical power and/or extinction ratio for a semiconductor laser (202). In one aspect, a microcontroller (206) of an optical transmitter (200) may adjust an electrical current that is provided to a semiconductor laser (202) based at least in part on a comparison of a first measured optical power of light emitted by the semiconductor laser (202) and a predetermined target optical power. The microcontroller (206) may then determine an electrical current that is capable of giving the semiconductor laser (202) a substantially constant extinction ratio by evaluating an equation with the first measured optical power and a second optical power measured after the controller (206) adjusts the electrical current.
    • 本文公开了为半导体激光器(202)实现基本上恒定的光功率和/或消光比的方法,装置和系统。 在一个方面,光发射机(200)的微控制器(206)可以至少部分地基于由第一测量的光功率与第二测量光功率的比较来调节提供给半导体激光器(202)的电流 半导体激光器(202)和预定的目标光功率。 微控制器(206)然后可以通过评估具有第一测量光功率的方程和在控制器(206)调整之后测量的第二光功率来确定能够给予半导体激光器(202)基本上恒定的消光比的电流 电流。