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1. 发明公开

KR1020090043265A 나노입자 잉크를 이용한 태양전지용 박막의 제조 방법 및그 방법을 이용한 태양전지 失效
标题翻译：使用该方法使用纳米颗粒墨水和太阳能电池制造太阳能电池薄膜的方法
公开(公告)号：KR1020090043265A
公开(公告)日：2009-05-06
申请号：KR1020070109031
申请日：2007-10-29
申请人： 엘지전자 주식회사
发明人： 최영호 , 이영희 , 최용우 , 김형석 , 김호경
IPC分类号： H01L31/0445 , H01L31/18 , H01L31/0216
CPC分类号： Y02E10/50 , Y02P70/521 , H01L31/0445 , H01L31/0216 , H01L31/18
摘要： 계면활성제가 코팅되어 있는 CI(G)S 나노입자가 분산되어 있는 CI(G)S 나노입자 잉크를 사용하여 CI(G)S 박막을 제조함으로써, 박막 조성을 제어할 수 있고 신뢰성을 높일 수 있으며 고가 장비 및 공정 등을 사용하지 않고도 결정성이 높은 CI(G)S 박막을 형성할 수 있는, CI(G)S 박막 제조 방법에 관한 것이다.
계면활성제가 코팅되어 있는 CI(G)S 나노입자가 분산되어 있는 CI(G)S 나노입자 잉크를 준비하는 단계; 기판 상에 상기 CI(G)S 나노입자 잉크를 도포하고 균일하게 코팅하는 단계; 상기 CI(G)S 나노입자에 코팅되어 있는 계면활성제를 제거하기 위해 열처리하는 1차 열처리 단계; 및 상기 CI(G)S 나노입자의 결정상 형성 및 결정립 조대화를 위해 열처리하는 2차 열처리 단계를 포함하는, CI(G)S 박막 제조 방법이 제공된다.
CI(G)S, 박막, 나노입자, 잉크, 계면 활성제

2. 发明公开

KR1020080073945A 레이저를 이용한 패터닝 방법 无效
标题翻译：使用激光的绘图方法
公开(公告)号：KR1020080073945A
公开(公告)日：2008-08-12
申请号：KR1020070012821
申请日：2007-02-07
申请人： 엘지전자 주식회사
发明人： 손정훈 , 윤상수 , 백민경 , 최용우 , 장재원 , 김광열 , 이성은
IPC分类号： H01L21/027 , H01L21/268
CPC分类号： G03F7/202 , G03F7/0002 , H01L21/268
摘要： A patterning method using a laser beam is provided to prevent thermal deformation of a substrate by performing a patterning process using a sophisticated photomask. A coating process is performed to form a coating agent(22) on a substrate(21). The coating agent is composed of a material having a laser absorption state corresponding to a value more than a predetermined value. A pattern mark including a pattern is aligned on the coating agent. The coating agent is patterned by irradiating a laser beam through the pattern mask. The coating agent is one of chrome, aluminum, pentacene, and photoresist. The pattern mask includes a transparent substrate and a metal layer patterned on the transparent substrate.
摘要翻译：提供使用激光束的图案化方法，以通过使用复杂的光掩模进行图案化处理来防止基板的热变形。进行涂覆工艺以在基底（21）上形成涂层剂（22）。涂层剂由具有对应于大于预定值的值的激光吸收状态的材料构成。包括图案的图案标记在涂布剂上排列。通过照射激光束通过图案掩模来对涂布剂进行图案化。涂层剂是铬，铝，并五苯和光致抗蚀剂之一。图案掩模包括透明基板和在透明基板上图案化的金属层。

3. 发明公开

KR1020080066339A 디스플레이 장치 및 디스플레이 장치의 제조 방법 无效
标题翻译：显示装置及其制造方法
公开(公告)号：KR1020080066339A
公开(公告)日：2008-07-16
申请号：KR1020070003654
申请日：2007-01-12
申请人： 엘지전자 주식회사
发明人： 손정훈 , 이성은 , 최지훈 , 최용우 , 성면창
IPC分类号： H05B33/22 , H05B33/02
CPC分类号： H01L51/0097 , H01L27/3244 , H01L51/56
摘要： A display apparatus and a manufacturing method thereof are provided to prevent separation of a gate electrode due to deformation of a flexible substrate by increasing an adhesion force between the flexible substrate and the gate electrode. A display apparatus includes a first layer(110), a second layer(120), and a third layer(140). The first layer is made of a first material. The second layer is made of a second material. The third layer is made of a mixture or a compound of the first material, the second material, and an inert material and is positioned between the first layer and the second layers. The first layer is a substrate of an organic electroluminescence display apparatus. The second layer is a gate electrode of the organic electroluminescence display apparatus.
摘要翻译：提供了显示装置及其制造方法，以通过增加柔性基板和栅电极之间的粘附力来防止由于柔性基板的变形而导致的栅电极的分离。显示装置包括第一层（110），第二层（120）和第三层（140）。第一层由第一层材料制成。第二层由第二层材料制成。第三层由第一材料，第二材料和惰性材料的混合物或化合物制成，并且位于第一层和第二层之间。第一层是有机电致发光显示装置的基板。第二层是有机电致发光显示装置的栅电极。

4. 发明公开

KR1020080040213A 폴리머 표면 처리층을 갖는 유기 박막 트랜지스터 및 그제조방법 无效
标题翻译：具有聚合物表面处理层的有机薄膜晶体管及其制造方法
公开(公告)号：KR1020080040213A
公开(公告)日：2008-05-08
申请号：KR1020060107869
申请日：2006-11-02
申请人： 엘지전자 주식회사
发明人： 이영희 , 윤상수 , 최용우
IPC分类号： H01L29/786
CPC分类号： H01L51/0545 , H01L51/0558 , H01L51/105
摘要： An organic thin film transistor having a polymer surface treatment layer and a method of manufacturing the same are provided to control surface energy and surface roughness of a laminated surface by using a bottom contact structure. A gate electrode(22) is formed on an upper surface of a transparent substrate(21). A gate insulating layer(23) is laminated on the upper surface of the transparent substrate. A source/drain electrode(24) is formed on an upper surface of the gate insulating layer. A polymer layer(25) is coated on the source/drain electrode and the gate insulating layer. An organic semiconductor layer(26) is formed on the polymer layer. The polymer layer is composed of one selected from PVFM(Poly Vinyl format), PMMA(Poly Methyl Methacrylate), PDMS(Poly Dimethylsiloxane), CYTOP, Teflon AF(Aluminum Foil), and Parylene.
摘要翻译：提供具有聚合物表面处理层的有机薄膜晶体管及其制造方法，以通过使用底部接触结构来控制层压表面的表面能和表面粗糙度。在透明基板（21）的上表面上形成栅电极（22）。在透明基板的上表面上层叠有栅极绝缘层（23）。源极/漏极（24）形成在栅极绝缘层的上表面上。聚合物层（25）涂覆在源极/漏极电极和栅极绝缘层上。在聚合物层上形成有机半导体层（26）。聚合物层由PVFM（聚乙烯基形式），PMMA（聚甲基丙烯酸甲酯），PDMS（聚二甲基硅氧烷），CYTOP，Teflon AF（铝箔）和Parylene组成。

5. 发明公开

KR1020080018339A 박막 트랜지스터 제조방법 无效
标题翻译：薄膜晶体管的制造方法
公开(公告)号：KR1020080018339A
公开(公告)日：2008-02-28
申请号：KR1020060080301
申请日：2006-08-24
申请人： 엘지전자 주식회사
发明人： 최지훈 , 윤상수 , 최용우
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , H01L29/78696
摘要： A method of manufacturing a thin film transistor is provided to make a channel width of the transistor in a constant level over the entire surface thereof by determining the channel width using a sacrificial layer patterned by etching. A gate electrode(102) is formed on a transparent substrate(101), and then a transparent gate insulating layer(103) and a transparent sacrificial layer are applied on the gate electrode. A photosensitive photoresist is deposited on the sacrificial layer, and then is exposed to light at a side opposite to a stacking direction of the transparent substrate. The sacrificial layer is over-etched, and then the photoresist is removed. A source/drain electrode(106) and a semiconductor layer(107) are patterned.
摘要翻译：提供一种制造薄膜晶体管的方法，通过使用通过蚀刻图案化的牺牲层来确定沟道宽度，使晶体管的整个表面的沟道宽度保持恒定。在透明基板（101）上形成栅电极（102），然后在栅电极上施加透明栅绝缘层（103）和透明牺牲层。将感光性光致抗蚀剂沉积在牺牲层上，然后暴露于与透明基板的层叠方向相反的一侧的光。牺牲层被过度蚀刻，然后去除光致抗蚀剂。对源极/漏极（106）和半导体层（107）进行构图。

6. 发明授权

KR102085828B1 태양 전지 및 이의 제조 방법 有权
公开(公告)号：KR102085828B1
公开(公告)日：2020-03-06
申请号：KR1020130129461
申请日：2013-10-29
申请人： 엘지전자 주식회사
发明人： 심경진 , 최용우
IPC分类号： H01L31/068 , H01L31/0224 , H01L31/0236 , H01L31/0368 , H01L31/18

7. 发明公开

KR1020090034078A 탠덤형 박막 태양전지 및 그의 제조방법 有权
标题翻译： TANNEM薄膜太阳能电池及其制造方法
公开(公告)号：KR1020090034078A
公开(公告)日：2009-04-07
申请号：KR1020070099240
申请日：2007-10-02
申请人： 엘지전자 주식회사
发明人： 김호경 , 최영호 , 최용우 , 이영희 , 김형석
IPC分类号： H01L31/047 , H01L31/0725 , H01L31/18
CPC分类号： Y02E10/50 , Y02P70/521 , H01L31/047 , H01L31/0725 , H01L31/18
摘要： A tandem thin film solar cell and a method of manufacture thereof can change the structure of the compound semiconductor solar battery and the order of the lamination process and produce conveniently the solar battery of the high efficiency without the additional process. Transparent layers(204,205) are formed in the top and lower part of the transparent substrate(200). The light absorption layer(202) is formed on each window layers. The back plate(220) and grid electrode are formed on each light absorption layers. The transparent conductive oxide(210) is formed between the light absorption layer and back plate between the light absorption layer and grid electrode. The grid electrode can be formed with the reflection barrier layer. The buffer layer is formed between optical absorption layer and the window layer.
摘要翻译：串联薄膜太阳能电池及其制造方法可以改变化合物半导体太阳能电池的结构和层压过程的顺序，并且方便地生产高效率的太阳能电池而无需额外的工艺。透明层（204,205）形成在透明基板（200）的顶部和下部。光吸收层（202）形成在每个窗口层上。背板（220）和栅电极形成在每个光吸收层上。在光吸收层和栅极之间的光吸收层和背板之间形成透明导电氧化物（210）。栅格电极可以形成有反射阻挡层。缓冲层形成在光吸收层和窗层之间。

8. 发明公开

KR1020090029494A 비정질 실리콘 및 나노 결정질 실리콘의 복합 박막을이용한 태양전지 및 그 제조방법 无效
标题翻译：使用非晶态和纳米晶体硅复合薄膜的太阳能电池及其制造方法
公开(公告)号：KR1020090029494A
公开(公告)日：2009-03-23
申请号：KR1020070094787
申请日：2007-09-18
申请人： 엘지전자 주식회사
发明人： 최용우 , 최영호 , 김형석 , 이영희
IPC分类号： H01L31/0445 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/03762 , B82Y20/00 , B82Y30/00 , H01L21/228 , H01L31/035281 , H01L31/03845 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A solar cell using a composite thin film of amorphous silicon and nano-crystalline silicon, and a fabrication method thereof are provided to reduce the manufacturing cost by using a printing technique under atmospheric pressure ambience. A solar battery comprises composite thin films(502,503,504). The composite thin film is comprised of the amorphous silicon and crystalline silicon. The composite thin film is arranged on a substrate(500). The composite thin film is silicon semiconductor layers which is doped or undoped.
摘要翻译：提供一种使用非晶硅和纳米晶硅的复合薄膜的太阳能电池及其制造方法，以通过在大气压环境下使用印刷技术来降低制造成本。太阳能电池包括复合薄膜（502,503,504）。复合薄膜由非晶硅和晶体硅组成。复合薄膜配置在基板（500）上。复合薄膜是掺杂或未掺杂的硅半导体层。

9. 发明公开

KR1020080086114A 실리사이드 시드를 이용한 실리콘 박막, 이를 포함하는태양전지 및 그 제조방법 无效
标题翻译：使用硅酮种子的硅薄膜，包括硅薄膜的太阳能电池及其制造方法
公开(公告)号：KR1020080086114A
公开(公告)日：2008-09-25
申请号：KR1020070027822
申请日：2007-03-21
申请人： 엘지전자 주식회사
发明人： 최용우 , 이영희 , 최영호
IPC分类号： H01L31/0445 , H01L21/20
CPC分类号： Y02E10/50 , H01L31/0445 , H01L21/20
摘要： A silicon thin film using a silicide seed, a solar cell including the silicon thin film, and a manufacturing method of the same are provided to reduce costs to form the silicon thin film which can be applied to a large area. A manufacturing method of a silicon thin film using a silicide seed includes the steps of: forming a silicide seed on a substrate; and fabricating by loading a silicon precursor on the substrate on which the silicide seed is formed. A solar cell including a double semiconductor layer junction structure or a triple semiconductor layer junction structure includes a semiconductor layer. The double semiconductor layer junction structure has a p-region and an n-region. The triple semiconductor layer junction structure is made by inserting an i-type semiconductor layer between the p-region and the n-region. The semiconductor layer is formed by doping impurity on the silicon thin film. The silicon thin film is formed by forming the silicide seed on a lower substrate of the semiconductor layer, by loading a silane compound, by removing solvent.
摘要翻译：提供了使用硅化物种子的硅薄膜，包括硅薄膜的太阳能电池及其制造方法，以降低可以应用于大面积的硅薄膜的成本。使用硅化物种子的硅薄膜的制造方法包括以下步骤：在基板上形成硅化物种子; 以及通过在其上形成硅化物种子的衬底上载入硅前体来制造。包括双半导体层结结构或三重半导体层结结构的太阳能电池包括半导体层。双半导体层结结构具有p区和n区。通过在p区和n区之间插入i型半导体层来制造三重半导体层结结构。通过在硅薄膜上掺杂杂质形成半导体层。通过加入硅烷化合物，通过除去溶剂，在半导体层的下基板上形成硅化物种子，形成硅薄膜。

10. 发明公开

KR1020080023472A 박막 트랜지스터 제조방법 无效
标题翻译：薄膜晶体管的制造方法
公开(公告)号：KR1020080023472A
公开(公告)日：2008-03-14
申请号：KR1020060087412
申请日：2006-09-11
申请人： 엘지전자 주식회사
发明人： 최지훈 , 윤상수 , 최용우
IPC分类号： H01L29/786 , H01L21/336 , H01L51/52 , H05B33/26
CPC分类号： H01L51/0558 , H01L51/0005 , H01L51/0545 , H01L51/105
摘要： A method for manufacturing a thin film transistor is provided to perform precise control of overlap and channel width between a gate electrode and a source/drain electrode by controlling exposure time and light intensity of a photo resist. A method for manufacturing a thin film transistor comprises the steps of: forming a gate electrode(102) on a transparent substrate(101); forming a transparent source/drain electrode(104); coating a negative photo resist(105) over the source/drain electrode; exposing the substrate until the negative photo resist is overlapped with the gate electrode from the opposite side of deposition and developing it; etching a channel of the source/drain electrode; removing the photo resist; and forming a semiconductor layer.
摘要翻译：提供一种制造薄膜晶体管的方法，通过控制光刻胶的曝光时间和光强度来对栅电极和源极/漏电极之间的重叠和沟道宽度进行精确控制。制造薄膜晶体管的方法包括以下步骤：在透明基板（101）上形成栅电极（102）; 形成透明源极/漏极（104）; 在源/漏电极上涂覆负光致抗蚀剂（105）; 曝光基板直到负光致抗蚀剂与沉积的相反侧与栅电极重叠并显影; 蚀刻源/漏电极的沟道; 去除光刻胶; 并形成半导体层。

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