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1. 发明授权

KR100447215B1 초전도 ＭｇＢ2 박막의 제조 방법 失效
标题翻译： 초전도MgB2박막의제조방법
公开(公告)号：KR100447215B1
公开(公告)日：2004-09-04
申请号：KR1020020007502
申请日：2002-02-08
申请人： 엘지전자 주식회사
发明人： 이호년 , 문승현
IPC分类号： H01L39/24
摘要： PURPOSE: A method for fabricating a superconducting MgB2 thin film is provided to mass-produce a uniform MgB2 thin film of a large area by reacting a deposited boron thin film with vaporized magnesium. CONSTITUTION: A boron-deposited substrate and magnesium are covered with foil. A sample covered with the foil is inserted into a crystal tube and the crystal tube becomes vacuum. After a purging process is performed on the crystal tube by using inert gas of high purity, the crystal tube is sealed. A heat treatment process is performed on the sealed crystal tube.
摘要翻译：目的：提供一种制造超导MgB2薄膜的方法，通过使淀积的硼薄膜与蒸发的镁反应，大量生产大面积的均匀MgB2薄膜。组成：硼沉积的基材和镁箔覆盖箔。将覆盖有箔的样品插入晶体管中，并使晶体管变为真空。在使用高纯度惰性气体对晶体管进行吹扫处理之后，密封晶体管。在密封的晶体管上执行热处理过程。

2. 发明公开

KR1020030067186A 초전도 조셉슨 접합 소자 제조 방법 无效
标题翻译：用于制造超导JOSEPHSON连接装置的方法
公开(公告)号：KR1020030067186A
公开(公告)日：2003-08-14
申请号：KR1020020007065
申请日：2002-02-07
申请人： 엘지전자 주식회사
发明人： 계정일 , 문승현
IPC分类号： H01L39/22
摘要： PURPOSE: A method for fabricating a superconducting Josephson junction device is provided to improve uniformity and repeatability by preventing the ramp-edge surface of the first electrode layer of high temperature superconductivity from being contaminated by an organic material through a chemical cleaning process. CONSTITUTION: The first electrode layer(11) with a ramp-edge and the first insulation layer(12) are sequentially formed on a substrate(10). The inclined corner of the first electrode layer is cleaned. The cleaned first electrode layer is chemically processed to form a transformation layer by using deionized water. The second electrode layer(15) and the second insulation layer(16) are sequentially formed on the first electrode layer and the first insulation layer.
摘要翻译：目的：提供一种用于制造超导约瑟夫逊连接装置的方法，以通过防止高温超导体的第一电极层的斜坡表面通过化学清洁过程被有机材料污染来改善均匀性和重复性。构成：具有斜坡边缘的第一电极层（11）和第一绝缘层（12）依次形成在衬底（10）上。清洁第一电极层的倾斜角。经清洗的第一电极层通过使用去离子水进行化学处理以形成转化层。第二电极层（15）和第二绝缘层（16）依次形成在第一电极层和第一绝缘层上。

3. 发明公开

KR1020030034679A 초전도체 전극 형성 방법 无效
标题翻译：制造超导电极的方法
公开(公告)号：KR1020030034679A
公开(公告)日：2003-05-09
申请号：KR1020010066358
申请日：2001-10-26
申请人： 엘지전자 주식회사
发明人： 계정일 , 문승현
IPC分类号： H01L39/24
摘要： PURPOSE: A method for fabricating a superconductive electrode is provided to eliminate the necessity of a subsequent heat treatment process by forming an electrode on an oxide superconductor while using a conductive oxide of the same kind as the oxide superconductor. CONSTITUTION: A superconductive thin film(110) and a conductive oxide(120) are sequentially deposited on a substrate(100). Photoresist is deposited on the conductive oxide and patterned. The superconductive thin film is etched to be exposed by using the patterned photoresist. The photoresist is eliminated. The superconductive oxide is either one of SrRuO3(SRO) or CaRuO3(CRO) which has a lattice constant similar to that of the superconductive thin film.
摘要翻译：目的：提供一种制造超导电极的方法，以便在使用与氧化物超导体相同类型的导电氧化物的同时，在氧化物超导体上形成电极以消除随后的热处理工艺的必要性。构成：超导薄膜（110）和导电氧化物（120）依次沉积在基底（100）上。光致抗蚀剂沉积在导电氧化物上并图案化。通过使用图案化的光致抗蚀剂来蚀刻超导薄膜以进行曝光。消除光致抗蚀剂。超导氧化物是具有与超导薄膜相似的晶格常数的SrRuO 3（SRO）或CaRuO 3（CRO）中的一种。

4. 发明公开

KR1020020088588A 초전도 양자간섭소자 주사현미경 无效
标题翻译：使用超导量子干扰装置作为扫描装置的显微镜
公开(公告)号：KR1020020088588A
公开(公告)日：2002-11-29
申请号：KR1020010027337
申请日：2001-05-18
申请人： 엘지전자 주식회사
发明人： 문승현 , 계정일 , 윤주환
IPC分类号： H01J37/28
摘要： PURPOSE: A microscope using superconducting quantum interference device as scanning device is provided to easily align the superconducting quantum interference device and window, while preventing erroneous operation of the device and improving signal-to-noise ratio. CONSTITUTION: A miscroscope comprises a superconducting quantum interference device for measuring magnetic field of a specimen(10); a refrigerant container(30) for containing a low temperature refrigerant(33) and serving as a cooling unit for cooling the superconducting quantum interference device down to the temperature lower than a threshold temperature; a low temperature vessel(40) for containing the superconducting quantum interference device, and which has an aperture(41) formed at the specimen side; a vacuum pump(60) for maintaining vacuum state of the low temperature vessel; and a window(50) having a substrate with a hole for accommodating the superconducting quantum interference device, and a shield screen formed at the specimen side surface of the substrate so as to close the hole formed at the substrate. The window is coupled to the low temperature vessel in such a manner as to close the aperture formed at the low temperature vessel.
摘要翻译：目的：提供使用超导量子干涉装置作为扫描装置的显微镜，以便容易地对准超导量子干涉装置和窗口，同时防止装置的错误操作并提高信噪比。构成：微镜包括用于测量样品（10）的磁场的超导量子干涉装置; 用于容纳低温制冷剂（33）并用作用于将超导量子干涉装置冷却到低于阈值温度的温度的冷却单元的制冷剂容器（30）用于容纳超导量子干涉装置的低温容器（40），在试样侧具有形成有孔（41）的低温容器（40）用于保持低温容器的真空状态的真空泵（60）; 以及具有用于容纳超导量子干涉装置的具有孔的基板的窗口（50），以及形成在基板的试样侧面的屏蔽屏幕，以闭合形成在基板上的孔。窗口以这样的方式耦合到低温容器，以关闭在低温容器处形成的孔。

5. 发明公开

KR1020010011961A 픽업 전류 상쇄를 이용한 초전도 양자간섭소자 无效
标题翻译：超导体量子干扰装置利用汲取电流补偿
公开(公告)号：KR1020010011961A
公开(公告)日：2001-02-15
申请号：KR1019990031592
申请日：1999-07-31
申请人： 엘지전자 주식회사
发明人： 이승민 , 문승현 , 오병두
IPC分类号： G01R33/00
摘要： PURPOSE: A super-conduction quantum interference device(SQUID) is provided to increase signal to noise ratio and reduce interference between SQUID driver circuits, and SQUID and object. CONSTITUTION: A SQUID comprises a pickup coil(30) having input/output terminals for inputting compensation current and which focuses magnetic flux, and a SQUID coil(10) coupled to the pickup coil so as to detect magnetic field generated from the pickup coil by a super-conduction shield current. The portion of the pickup coil spaced apart from the SQUID loop has a width wider than that of the portion contacting the SQUID loop. Thus, interference between SQUID driver circuits, and SQUID and object, can be prevented by restricting magnetic field generated by a feedback current.
摘要翻译：目的：提供超导量子干涉装置（SQUID）以增加信噪比，并减少SQUID驱动电路与SQUID与物体之间的干扰。构成：SQUID包括具有用于输入补偿电流并且聚焦磁通的输入/输出端子的拾取线圈（30），以及耦合到拾取线圈的SQUID线圈（10），以便检测从拾取线圈产生的磁场超导屏蔽电流。拾取线圈与SQUID环路间隔开的部分的宽度大于与SQUID回路接触的部分的宽度。因此，可以通过限制由反馈电流产生的磁场来防止SQUID驱动电路与SQUID和物体之间的干扰。

6. 发明授权

KR100434279B1 초전도체를 이용한 전계효과 트랜지스터 제조 방법 失效
标题翻译： 초전도체를이용한전계효과트랜스터터법법
公开(公告)号：KR100434279B1
公开(公告)日：2004-06-05
申请号：KR1020010062442
申请日：2001-10-10
申请人： 엘지전자 주식회사
发明人： 최홍석 , 안준형 , 계정일 , 문승현
IPC分类号： H01L39/22
摘要： PURPOSE: A method for fabricating a field effect transistor using a superconductor is provided to remove metallic components in an Al2O3 insulation layer on MgB2 superconductor to improve the quality of electrical insulation by performing thermal process. CONSTITUTION: A MgB2 superconducting layer is deposited on a substrate(10) and a mask is formed on the whole surface of it. The superconductor layer is etched to form a superconducting layer pattern by using the photoresist pattern made by performing photolithography on the mask. After removing the mask, A source and drain electrode(13) are deposited on the superconducting layer pattern(11). An Al2O3 insulation layer(14) is deposited on the resultant structure. A gate oxide(15) is deposited on the insulation layer. The insulation layer is thermally processed under 300-400 degree C.
摘要翻译：目的：提供一种使用超导体制造场效应晶体管的方法，以去除MgB2超导体上的Al 2 O 3绝缘层中的金属成分，以通过执行热处理来提高电绝缘的质量。构成：将MgB 2超导层沉积在衬底（10）上并在其整个表面上形成掩模。通过使用通过在掩模上执行光刻而制成的光致抗蚀剂图案来蚀刻超导层以形成超导层图案。在去除掩模之后，在超导层图案（11）上沉积源电极和漏电极（13）。在所得结构上沉积Al2O3绝缘层（14）。栅极氧化物（15）沉积在绝缘层上。绝缘层在300-400℃下热处理

7. 发明授权

KR100434278B1 초전도체를 이용한 전계효과 트랜지스터의 제작 방법 失效
标题翻译： 초전도체를이용한전계효과트랜지스터의제작방초
公开(公告)号：KR100434278B1
公开(公告)日：2004-06-05
申请号：KR1020010062441
申请日：2001-10-10
申请人： 엘지전자 주식회사
发明人： 최홍석 , 안준형 , 계정일 , 문승현
IPC分类号： H01L39/22
摘要： PURPOSE: A method for fabricating a field effect transistor using a superconductor is provided to remove metallic components in MgO insulation layer on MgB2 superconductor to improve the quality of electrical insulation by performing a thermal process. CONSTITUTION: The first MgB2 superconducting layer is deposited on a substrate(10) and then a mask is formed on the whole surface of it. The superconducting layer is etched to form a superconducting layer pattern by using the photoresist pattern made by performing photolithography on the mask. After removing the mask, A source and drain electrode(12) are deposited on the superconducting layer pattern(11). The second MgB2 superconducting layer is deposited on the resultant structure and then oxidized under the temperature of 100 to 800 degree C. in oxygen atmosphere to form MgO gate insulating layer(15), on which a gate electrode(16) is deposited. The whole structure is thermally processed under the temperature of 100 to 800 in oxygen atmosphere.
摘要翻译：目的：提供一种使用超导体制造场效应晶体管的方法，以去除MgB2超导体上的MgO绝缘层中的金属成分，以通过执行热处理来提高电绝缘的质量。构成：将第一MgB 2超导层淀积在衬底（10）上，然后在其整个表面上形成掩模。通过使用通过在掩模上执行光刻制成的光致抗蚀剂图案来蚀刻超导层以形成超导层图案。在去除掩模之后，在超导层图案（11）上沉积源电极和漏电极（12）。将第二MgB 2超导层沉积在所得结构上，然后在氧气气氛中在100至800℃的温度下氧化以形成MgO栅极绝缘层（15），其上沉积栅极电极（16）。整个结构在氧气氛中在100至800℃的温度下进行热处理。

8. 发明公开

KR1020030029748A 초전도체를 이용한 전계효과 트랜지스터 제조 방법 失效
标题翻译：使用超导体制作场效应晶体管的方法
公开(公告)号：KR1020030029748A
公开(公告)日：2003-04-16
申请号：KR1020010062442
申请日：2001-10-10
申请人： 엘지전자 주식회사
发明人： 최홍석 , 안준형 , 계정일 , 문승현
IPC分类号： H01L39/22
摘要： PURPOSE: A method for fabricating a field effect transistor using a superconductor is provided to remove metallic components in an Al2O3 insulation layer on MgB2 superconductor to improve the quality of electrical insulation by performing thermal process. CONSTITUTION: A MgB2 superconducting layer is deposited on a substrate(10) and a mask is formed on the whole surface of it. The superconductor layer is etched to form a superconducting layer pattern by using the photoresist pattern made by performing photolithography on the mask. After removing the mask, A source and drain electrode(13) are deposited on the superconducting layer pattern(11). An Al2O3 insulation layer(14) is deposited on the resultant structure. A gate oxide(15) is deposited on the insulation layer. The insulation layer is thermally processed under 300-400 degree C.
摘要翻译：目的：提供一种使用超导体制造场效应晶体管的方法，以去除MgB2超导体上的Al2O3绝缘层中的金属组分，以通过进行热处理来提高电绝缘的质量。构成：将MgB 2超导层沉积在基底（10）上，并在其整个表面上形成掩模。通过使用通过在掩模上进行光刻制造的光致抗蚀剂图案来蚀刻超导体层以形成超导层图案。在去除掩模之后，在超导层图案（11）上沉积源极和漏极（13）。在所得结构上沉积Al 2 O 3绝缘层（14）。栅极氧化物（15）沉积在绝缘层上。绝缘层在300-400℃下进行热处理

9. 发明授权

KR100421865B1 화학처리법을 이용한 조셉슨 접합 제조 방법 失效
标题翻译： 화학처리법을이용한조셉슨접합제조방법
公开(公告)号：KR100421865B1
公开(公告)日：2004-03-09
申请号：KR1020010028402
申请日：2001-05-23
申请人： 엘지전자 주식회사
发明人： 윤주환 , 문승현 , 계정일
IPC分类号： H01L39/22
摘要： PURPOSE: A method for manufacturing Josephson junction is provided to simplify manufacturing processes and to shrink processing time by damaging the surface of Josephson junction using a chemical etching instead of Ar ion milling. CONSTITUTION: A first superconductive film made of YBCO and a first insulating film of STO are sequentially formed on a SrTiO3 substrate(S10). The SrTiO3 substrate is partially exposed by etching a bridge region of the first superconductive film and the insulating film(S20). After cleaning the resultant structure(S30), the etched bridge region is chemically treated by dipping the resultant structure in ethanol solution added Br, thereby forming a barrier layer(S40). A second superconductive film and a second insulating film are sequentially formed on the resultant structure(S50). The first superconductive film is exposed by selectively etching the second superconductive film and the second insulating film(S60). Pads are formed on the exposed superconductive films(S70).
摘要翻译：目的：提供一种制造约瑟夫森结的方法，以简化制造工艺并通过使用化学蚀刻而不是Ar离子铣削破坏约瑟夫森结的表面来缩短处理时间。构成：在SrTiO3基板上依次形成由YBCO构成的第一超导膜和STO的第一绝缘膜（S10）。通过蚀刻第一超导膜和绝缘膜的桥接区域来部分地暴露SrTiO 3基板（S20）。在清洗所得结构（S30）之后，通过将得到的结构浸渍在添加Br的乙醇溶液中来对蚀刻的桥接区域进行化学处理，由此形成阻挡层（S40）。在所得结构上顺序形成第二超导膜和第二绝缘膜（S50）。通过选择性地蚀刻第二超导膜和第二绝缘膜来暴露第一超导膜（S60）。在暴露的超导膜上形成垫（S70）。

10. 发明公开

KR1020030067360A 초전도 ＭｇＢ2 박막의 제조 방법 失效
标题翻译：用于制造超级MGB2薄膜的方法
公开(公告)号：KR1020030067360A
公开(公告)日：2003-08-14
申请号：KR1020020007502
申请日：2002-02-08
申请人： 엘지전자 주식회사
发明人： 이호년 , 문승현
IPC分类号： H01L39/24
摘要： PURPOSE: A method for fabricating a superconducting MgB2 thin film is provided to mass-produce a uniform MgB2 thin film of a large area by reacting a deposited boron thin film with vaporized magnesium. CONSTITUTION: A boron-deposited substrate and magnesium are covered with foil. A sample covered with the foil is inserted into a crystal tube and the crystal tube becomes vacuum. After a purging process is performed on the crystal tube by using inert gas of high purity, the crystal tube is sealed. A heat treatment process is performed on the sealed crystal tube.
摘要翻译：目的：提供一种制造超导MgB2薄膜的方法，通过使沉积的硼薄膜与蒸发的镁反应来大量生产大面积均匀的MgB2薄膜。构成：硼沉积的基底和镁被箔覆盖。将覆盖有箔的样品插入晶体管中，并且晶体管变为真空。在通过使用高纯度的惰性气体在晶体管上进行清洗处理之后，将晶体管密封。对密封的晶体管进行热处理。

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