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1. 发明公开

KR1020090103144A ＦＩＲ 필터의 ＣＳＤ 계수 산출방법 无效
标题翻译：在有限冲突响应过滤器中计算CANONIC签名数字系数的方法
公开(公告)号：KR1020090103144A
公开(公告)日：2009-10-01
申请号：KR1020080028547
申请日：2008-03-27
申请人： 엘지전자 주식회사
发明人： 김인철 , 이희섭 , 김성천 , 김기철 , 김홍득
IPC分类号： H03H17/00
CPC分类号： H03H17/0227 , H03H17/0211 , H03H17/0238 , H03H17/0657
摘要： PURPOSE: A method for calculating the CSD coefficient of an FIR filter is provided to calculate the CSD coefficient by using an MILP(Mixed Integer Linear Programming) algorithm. CONSTITUTION: A method for calculating the CSD coefficient of an FIR filter comprises the following steps of: setting up the length N, resolution B and the number of bits Z of a designed FIR(Finite Impulse Response) filter(S400); setting up a variable i for increasing the length N and a variable j for increasing the resolution B into zero(S402); and calculating the CSD(Canonic Signed Digit) coefficient and the size of a ripple by executing MILP(Mixed Integer Linear Programming) algorithm with N+2i, B+j and Z(S404).
摘要翻译：目的：提供一种用于计算FIR滤波器的CSD系数的方法，以通过使用MILP（混合整数线性规划）算法来计算CSD系数。构成：用于计算FIR滤波器的CSD系数的方法包括以下步骤：设置设计的FIR（有限脉冲响应）滤波器的长度N，分辨率B和位数Z（S400）; 设置用于增加长度N的变量i和用于将分辨率B增加为零的变量j（S402）; 并通过执行N + 2i，B + j和Z（S404）的MILP（混合整数线性规划）算法计算CSD（Canonic Signed Digit）系数和纹波大小。

2. 发明授权

KR100442230B1 인덕터제조방법 失效
公开(公告)号：KR100442230B1
公开(公告)日：2004-10-08
申请号：KR1019960072214
申请日：1996-12-26
申请人： 엘지전자 주식회사
发明人： 김기철
IPC分类号： H01L27/01
摘要： PURPOSE: An inductor fabrication method is provided to increase a resonant frequency and reduce insertion less by forming a column-shaped insulating layer with a material having a leakage capacitance and a low leakage resistance on a substrate and forming an inductor thereon. CONSTITUTION: A first insulating layer is formed on a substrate(10) by using SiO2. The first insulating layer is removed from the remaining region except for an inductor region by a patterning/etching process. A second insulating layer(12) is formed on the entire surface of the substrate by using Si3N4. The first insulating layer is exposed by etching the second insulating layer. A metal layer for inductor is formed on the entire surface of the substrate. A shape of an inductor(14) is formed on the first insulating layer by patterning and etching the metal layer. The first insulating layer is exposed by etching back the second insulating layer.

3. 发明公开

KR1020030083817A 이중 주파수대역을 가지는 표면 탄성파 필터 无效
标题翻译：具有双频带的表面声波滤波器
公开(公告)号：KR1020030083817A
公开(公告)日：2003-11-01
申请号：KR1020020021999
申请日：2002-04-22
申请人： 엘지전자 주식회사
发明人： 김기철
IPC分类号： H03H9/64
CPC分类号： H03H9/64 , H03H9/1092 , H03H9/125 , H03H9/6473
摘要： PURPOSE: A surface acoustic wave(SAW) filter having a dual frequency band is provided which filters a high frequency signal and a low frequency signal selectively with one SAW filter. CONSTITUTION: The surface acoustic wave(SAW) filter comprises a piezoelectric substrate(300), and a pair of absorption parts(310,310a) absorbing a filtering signal by being arranged on the right and left of the piezoelectric substrate. An input converter(330) is comprised between the pair of absorption parts, and converts an input signal into a SAW(Surface Acoustic Wave) to flow through the piezoelectric substrate. And an output converter(340) draws outs a signal of a fixed frequency set in the SAW flowing through the piezoelectric substrate. Each of the input converter and the output converter comprises a plurality of first IDT(Inter Digit Transducer) connected to the first electrode, and a plurality of second IDT connected to the second and the third electrode, and a plurality of third IDT connected to the fourth electrode.
摘要翻译：目的：提供具有双频带的表面声波（SAW）滤波器，其用一个SAW滤波器选择性地对高频信号和低频信号进行滤波。构成：表面声波（SAW）滤波器包括压电基片（300）和一对通过布置在压电基片的右侧和左侧而吸收滤波信号的吸收部分（310,310a）。输入转换器（330）包括在一对吸收部分之间，并将输入信号转换成SAW（表面声波）以流过压电基片。并且输出转换器（340）抽出在流过压电基片的SAW中设定的固定频率的信号。每个输入转换器和输出转换器包括连接到第一电极的多个第一IDT（Inter Digit Transducer）和连接到第二和第三电极的多个第二IDT以及连接到第二电极的多个第三IDT 第四电极。

4. 发明授权

KR100404169B1 반도체소자의제조방법 失效
公开(公告)号：KR100404169B1
公开(公告)日：2004-07-01
申请号：KR1019960001737
申请日：1996-01-26
申请人： 엘지전자 주식회사
发明人： 김기철
IPC分类号： H01L27/12
摘要： PURPOSE: A method for fabricating a semiconductor device is provided to reduce fabricating cost by forming an active layer by a diffusion method using an insulation layer. CONSTITUTION: A semiconductor substrate(11) is prepared. The first oxide layer(12b) of a high density and the first nitride layer of a high density are sequentially formed on the substrate, and are selectively removed to form a contact hole for a gate. The second oxide layer of a low density and the second nitride layer of a low density are sequentially formed on the exposed surface of the first nitride layer. A heat treatment process is performed so that the impurities in the first oxide layer and the nitride layer are diffused to the substrate to form the first and second high density regions and the impurities in the second oxide layer and the nitride layer are diffused to the substrate to form a low density region. The first oxide layer, the second oxide layer and the nitride layers are selectively removed to be left on the entire low density region and a part of the first and second high density regions so that a mesa type is formed. A source/drain electrode(20a,20b) is formed on the exposed surface of the first and second high density region. The remaining second oxide layer and nitride layers are selectively removed. A gate electrode(22a) is formed on the substrate on the exposed low density region. The first oxide layer, the second oxide layer and the nitride layers are eliminated.

5. 发明公开

KR1020030082105A 이중대역 주파수 변환장치 无效
标题翻译：转换双频段的设备
公开(公告)号：KR1020030082105A
公开(公告)日：2003-10-22
申请号：KR1020020020659
申请日：2002-04-16
申请人： 엘지전자 주식회사
发明人： 김기철
IPC分类号： H04B1/16
CPC分类号： H04B1/0071
摘要： PURPOSE: An apparatus for converting dual band frequencies is provided to selectively detect one signal between signals with the dual band frequencies according to a control signal and convert a frequency of the selected signal into an IF(Intermediate Frequency). CONSTITUTION: The first resonating unit(200) selectively resonates one signal between signals with dual band frequencies according to a control signal. A control voltage generating unit(210) selectively generates one oscillation control voltage between two oscillation control voltages for generating two oscillation signals according to the control signal. A VCO(Voltage Controlled Oscillator)(220) selectively generates one oscillation signal between the two oscillation signals according to the oscillation control voltage of the control voltage generating unit(210). A mixer(230) mixes the signal resonated in the first resonating unit(200) with the oscillation signal generated in the VCO(220), and generates an IF signal.
摘要翻译：目的：提供一种用于转换双频带频率的装置，以根据控制信号选择性地检测具有双频带频率的信号之间的一个信号，并将所选信号的频率转换成IF（中频）。构成：第一谐振单元（200）根据控制信号选择性地谐振具有双频带频率的信号之间的一个信号。控制电压产生单元（210）根据控制信号有选择地在两个振荡控制电压之间产生一个振荡控制电压以产生两个振荡信号。 VCO（压控振荡器）（220）根据控制电压产生单元（210）的振荡控制电压选择性地在两个振荡信号之间产生一个振荡信号。混频器（230）将在第一谐振单元（200）中谐振的信号与在VCO（220）中产生的振荡信号混频，并产生IF信号。

6. 发明公开

KR1019970060509A 반도체소자의제조방법 失效
公开(公告)号：KR1019970060509A
公开(公告)日：1997-08-12
申请号：KR1019960001737
申请日：1996-01-26
申请人： 엘지전자 주식회사
发明人： 김기철
IPC分类号： H01L27/12
摘要： 본 발명은 반도체 소자의 제조방법에 관한것으로, 활성층을 확산법으로 형성할 수 있어 공정단가를 감소시키고 제작수율을 높일 수 있도록 한 것이다.
본 발명에 따른 반도체 소자의 제조 방법은 기판을 준비하는 단계; 상기 기판상에 제1고농도 절연막과, 상기 제1고농도 절연막위에 제2고농도 절연막을 각각 형성하는 단계; 상기 제2고농도 절연막 및 제2고농도 절연막을 선택적으로 제거하여 표면위에 제1저농도 절연막과, 상기 제1저농도 절연막위에 제2저농도 절연막으 형성하는 단계; 상기 제1 및 제2고농도 절연막들과, 상기 제1 및 제2저농도 절연막들을 열처리하여 상기 반도체기판에 제1 및 제2고농도 영역과 저농도 영역을 각각 형성하는 단계; 상기 제1 및 제2저농도 절연막드로가 상기 제1 및 제2고농도 절연막들을 상기 저농도영역 전체와 제1 및 제2고농도영역들의 일부분위에만 남도록 선택적으로 제거하여 메사형태로 형성하는 단계; 상기 제1 및 제2고농도영역의 노출된 표면에 각각 소오소전극 및 드레인 전극을 형성하는 단계; 상기 저농도영역의 일부분만 노출되도록 상기 남아 있는 제1 및 제2저농도 절연막들을 선택적으로 제거하는 단계; 상기 노출된 저농도영역상의 반도체기판에 게이트전극을 형성하는 단계; 상기 제1 및 제2저농도 절연막들 및 상기 제1 및 제2고농도 절연막들을 제거하는 단계를 포함하여 이루어진다.

7. 发明公开

KR1019980053158A 인덕터제조방법 失效
公开(公告)号：KR1019980053158A
公开(公告)日：1998-09-25
申请号：KR1019960072214
申请日：1996-12-26
申请人： 엘지전자 주식회사
发明人： 김기철
IPC分类号： H01L27/01
摘要： 본 발명은 높은 주파수에서 동작할 수 있고 신호전달의 손실이 작은 인덕터의 제조방법을 제공함을 목적으로 되고 있다.
이와 같은 본 발명의 목적은 기판상에 제 1 절연층을 형성하고, 패턴/식각 공정을 통하여 인덕터가 형성된 일정영역만 남도록 하는 단계와, 상기 패턴/식각한 기판의 전면에 제 2 절연층을 형성하는 단계와, 상기 제 1 절연층이 노출되도록 상기 제 2 절연층을 식각하여 평판화하는 단계와, 상기 평판화된 전면에 인덕터용 금속층을 형성하는 단계와, 상기 제 1 절연막위에 상기 금속층이 남겨지도록 함과 동시에 소정의 인덕터 형태가 되도록 상기 금속층을 패턴/식각하는 단계와, 상기 제 1 절연막이 노출되도록 상기 제 2 절연막을 전부 식각하는 단계를 구비함을 특징으로 한다.

8. 发明公开

KR1020040074300A ＲＦＭＥＭＳ 스위치 및 그의 제조방법 无效
标题翻译： RF MEMS开关及其制造方法
公开(公告)号：KR1020040074300A
公开(公告)日：2004-08-25
申请号：KR1020030009839
申请日：2003-02-17
申请人： 엘지전자 주식회사
发明人： 김기철
IPC分类号： H01L29/417
摘要： PURPOSE: An RF MEMS switch and a fabricating method thereof are provided to reduce the manufacturing cost by using a ground electrode to form a two-way communication type switch. CONSTITUTION: A lower electrode(22) is formed on a predetermined region of a substrate(20). A ground electrode(21) is formed on the substrate of both sides of the lower electrode. A couple of ground molds(26,31) are formed on the ground electrode. A top ground electrode(32) is formed on the ground molds. A dielectric layer is formed on a lower side of the top ground electrode between the ground molds. A top electrode(29) is formed on a predetermined region of a lower side of the dielectric layer. An upper electrode(27) is selectively connected to the lower electrode and the top electrode according to an external voltage.
摘要翻译：目的：提供RF MEMS开关及其制造方法，以通过使用接地电极来形成双向通信型开关来降低制造成本。构成：在基板（20）的预定区域上形成下电极（22）。在下电极的两侧的基板上形成接地电极（21）。在接地电极上形成一对接地模具（26,31）。在地面模具上形成顶部接地电极（32）。在地面模具之间的顶部接地电极的下侧形成介电层。顶部电极（29）形成在电介质层的下侧的预定区域上。根据外部电压，上电极（27）选择性地连接到下电极和顶电极。

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