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1. 发明授权

KR101961798B1 발광 소자 有权
公开(公告)号：KR101961798B1
公开(公告)日：2019-03-25
申请号：KR1020110143419
申请日：2011-12-27
申请人： 엘지이노텍 주식회사
发明人： 최미경
IPC分类号： H01L33/14 , H01L33/36

2. 发明授权

KR101944410B1 발광 소자 有权
公开(公告)号：KR101944410B1
公开(公告)日：2019-01-31
申请号：KR1020120103187
申请日：2012-09-18
申请人： 엘지이노텍 주식회사
发明人： 정성이 , 최미경
IPC分类号： H01L33/48 , H01L33/54 , H01L33/60

3. 发明公开

KR1020140098518A 발광소자 审中-实审
标题翻译：发光装置
公开(公告)号：KR1020140098518A
公开(公告)日：2014-08-08
申请号：KR1020130011285
申请日：2013-01-31
申请人： 엘지이노텍 주식회사
发明人： 정성이 , 최미경
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/14
摘要： According to an embodiment of the present invention, the present invention relates to a light emitting device. The light emitting device includes a first conductive semiconductor layer; an active layer arranged on the first conductive semiconductor layer; a second conductive semiconductor layer arranged on the active layer; an AlInN layer arranged on the second conductive semiconductor layer; and a third conductive semiconductor layer arranged on the AllnN layer. An area of the AllnN layer which contacts with the second conductive semiconductor layer may contain a In content lower than one of an area of the AllnN layer which contacts with the third conductive semiconductor layer.
摘要翻译：根据本发明的实施例，本发明涉及一种发光器件。发光器件包括第一导电半导体层; 布置在所述第一导电半导体层上的有源层; 布置在所述有源层上的第二导电半导体层; 布置在所述第二导电半导体层上的AlInN层; 以及布置在AllnN层上的第三导电半导体层。与第二导电半导体层接触的AllnN层的区域可以包含低于与第三导电半导体层接触的AllnN层的区域中的一个的In含量。

4. 发明公开

KR1020130074078A 자외선 발광 소자 审中-实审
标题翻译：超紫外线发光装置
公开(公告)号：KR1020130074078A
公开(公告)日：2013-07-04
申请号：KR1020110141949
申请日：2011-12-26
申请人： 엘지이노텍 주식회사
发明人： 최미경
IPC分类号： H01L33/12
CPC分类号： H01L33/12 , H01L21/2011 , H01L33/22 , H01L33/32
摘要： PURPOSE: An ultraviolet light emitting device is provided to prevent the generation of crack and warpage by relieving lattice mismatch. CONSTITUTION: A buffer layer (20) is formed on a substrate. An ultraviolet light emitting structure (21) is formed on the buffer layer. The buffer layer includes first and second layers. The first and second layers are alternatively formed between the substrate and the ultraviolet light emitting structure. The thickness of the first layer is different from the second layer.
摘要翻译：目的：提供紫外线发光装置，以通过减轻晶格失配来防止产生裂纹和翘曲。构成：在衬底上形成缓冲层（20）。在缓冲层上形成有紫外线发光结构（21）。缓冲层包括第一层和第二层。第一层和第二层交替地形成在衬底和紫外光发射结构之间。第一层的厚度不同于第二层。

5. 发明公开

KR1020140026071A 발광 소자 审中-实审
标题翻译：发光装置
公开(公告)号：KR1020140026071A
公开(公告)日：2014-03-05
申请号：KR1020120093018
申请日：2012-08-24
申请人： 엘지이노텍 주식회사
发明人： 최미경 , 정성이
IPC分类号： H01L33/14 , H01L33/10
CPC分类号： H01L33/145 , H01L33/10
摘要： A light emitting device of an embodiment includes: a support substrate; a light emitting structure having a first conductive semiconductor layer, an activating layer, and a second conductive semiconductor layer, alternatively which are laminated on the support substrate; a current preventing layer arranged between the light emitting structure and the support substrate, and having an aperture part exposing the first conductive semiconductor layer; a reflection layer disposed between the aperture and the support substrate to reflect light; a diffusion preventing layer disposed between the reflection layer and the support substrate to prevent a metal atom of the support substrate diffusing; and a bonding layer to bond the reflection layer to the diffusion preventing layer, wherein a cavity is formed between the current preventing layer and the support substrate.
摘要翻译：实施例的发光装置包括：支撑基板; 具有层叠在所述支撑基板上的第一导电半导体层，激活层和第二导电半导体层的发光结构，布置在所述发光结构和所述支撑基板之间并具有露出所述第一导电半导体层的开口部的电流防止层; 设置在所述孔和所述支撑基板之间以反射光的反射层; 设置在所述反射层和所述支撑基板之间以防止所述支撑基板的金属原子扩散的扩散防止层; 以及将反射层粘合到扩散防止层的接合层，其中在防流体层和支撑基板之间形成空腔。

6. 发明授权

KR101972046B1 발광 소자 有权
公开(公告)号：KR101972046B1
公开(公告)日：2019-04-24
申请号：KR1020120093017
申请日：2012-08-24
申请人： 엘지이노텍 주식회사
发明人： 정성이 , 최미경
IPC分类号： H01L33/12 , H01L33/26 , H01L33/20

7. 发明公开

KR1020140134743A 발광소자 审中-实审
标题翻译：发光装置
公开(公告)号：KR1020140134743A
公开(公告)日：2014-11-25
申请号：KR1020130049284
申请日：2013-05-02
申请人： 엘지이노텍 주식회사
发明人： 정성이 , 최미경
IPC分类号： H01L33/12 , H01L33/20 , H01L33/22
CPC分类号： H01L33/145 , H01L33/22 , H01L33/32
摘要： 실시예는 발광소자에 관한 것이다. 실시예에 따른 발광소자는 제1 도전형 반도체층, 상기 제1 도전형 반도체층 상에 배치되는 활성층, 상기 활성층 상에 배치되며, 제2 도전형 반도체층, 상기 제2 도전형 반도체층 상에 소정거리로 이격되어 배치되는 복수의 패턴 및 상기 복수의 패턴 및 제2 도전형 반도체층 상에 배치되고, 상기 복수의 패턴을 기준으로 형성되는 V-형상의 결함구조를 가지는 제3 도전형 반도체층을 포함할 수 있다.
摘要翻译：本发明的实施例涉及一种发光器件。根据本发明实施例的发光器件包括：第一导电半导体层，布置在第一导电半导体层上的有源层，布置在有源层上的第二导电半导体层，多个图案它们以预定距离分开布置在第二导电半导体层上，第三导电半导体层布置在图案和第二导电半导体层上，并且包括基于图案形成的V形缺陷结构。

8. 发明公开

KR1020140036727A 발광 소자 审中-实审
标题翻译：发光装置
公开(公告)号：KR1020140036727A
公开(公告)日：2014-03-26
申请号：KR1020120103187
申请日：2012-09-18
申请人： 엘지이노텍 주식회사
发明人： 정성이 , 최미경
IPC分类号： H01L33/48 , H01L33/54 , H01L33/60
CPC分类号： H01L2224/14 , H01L2224/16225 , H01L2924/19107
摘要： A light emitting device of an embodiment comprises: a substrate; a light emitting structure having a first conductive semiconductor layer, an activation layer, and a second conductive semiconductor layer which are arranged under the substrate; a first electrode layer and a second electrode layer arranged under the first conductive semiconductor layer and the second conductive semiconductor layer respectively; a submount having a first region and a second region in which the light emitting structure is mounted; and a first electrode pad and a second electrode pad arranged on the submount to be separated from each other, and electrically connected to the first electrode layer and the second electrode layer respectively, wherein at least one among the first electrode pad and the second electrode pad has a slope shape in the second region of the submount, and includes an upper side which reflects the light of the light emitting structure. The refractive index of the second conductive semiconductor layer is larger than the refractive index of the first conductive semiconductor layer and the refractive index of the first conductive semiconductor layer is larger than the refractive index of the substrate.
摘要翻译：实施例的发光器件包括：衬底; 具有布置在所述基板下方的具有第一导电半导体层，激活层和第二导电半导体层的发光结构; 分别设置在第一导电半导体层和第二导电半导体层下方的第一电极层和第二电极层; 具有安装所述发光结构的第一区域和第二区域的基座; 以及布置在所述基座上以彼此分离的第一电极焊盘和第二电极焊盘，并且分别与所述第一电极层和所述第二电极层电连接，其中所述第一电极焊盘和所述第二电极焊盘中的至少一个在基座的第二区域具有斜坡形状，并且包括反射发光结构的光的上侧。第二导电半导体层的折射率大于第一导电半导体层的折射率，第一导电半导体层的折射率大于基板的折射率。

9. 发明公开

KR1020140026070A 발광 소자 审中-实审
标题翻译：发光装置
公开(公告)号：KR1020140026070A
公开(公告)日：2014-03-05
申请号：KR1020120093017
申请日：2012-08-24
申请人： 엘지이노텍 주식회사
发明人： 정성이 , 최미경
IPC分类号： H01L33/32 , H01L33/12
CPC分类号： H01L33/12 , H01L33/20 , H01L33/26
摘要： According to an embodiment of the present invention, a light emitting device includes: a substrate; a first light emitting structure which is arranged on the substrate, has at least one etch byproduct that remains on a surface processed by an etching solution, and includes at least one of AlGaN and InAlGaN; and a second light emitting structure arranged on the upper side of the first light emitting structure on which at least one etch byproduct remains.
摘要翻译：根据本发明的实施例，发光器件包括：基板; 布置在基板上的第一发光结构具有保留在由蚀刻溶液处理的表面上的至少一个蚀刻副产物，并且包括AlGaN和InAlGaN中的至少一种; 以及布置在第一发光结构的上侧上的第二发光结构，其上保留有至少一个蚀刻副产物。

10. 发明公开

KR1020130075167A 발광 소자 审中-实审
标题翻译：发光装置
公开(公告)号：KR1020130075167A
公开(公告)日：2013-07-05
申请号：KR1020110143419
申请日：2011-12-27
申请人： 엘지이노텍 주식회사
发明人： 최미경
IPC分类号： H01L33/04 , H01L33/14
CPC分类号： H01L33/14 , H01L2924/12041
摘要： PURPOSE: A light emitting device is provided to obtain uniform luminous efficiency by forming a carrier guide layer between a channel layer and a first conductive semiconductor layer. CONSTITUTION: A light emitting structure (25) is formed on a substrate (11). The light emitting structure includes a first conductive semiconductor layer (19), an active layer (21), and a second conductive semiconductor layer (23). A first electrode (27) is connected to the first conductive semiconductor layer. A second electrode (29) is connected to the second conductive semiconductor layer. A current spreading layer (18) is arranged on the first conductive semiconductor layer.
摘要翻译：目的：通过在通道层和第一导电半导体层之间形成载体引导层，提供发光器件以获得均匀的发光效率。构成：在基板（11）上形成发光结构（25）。发光结构包括第一导电半导体层（19），有源层（21）和第二导电半导体层（23）。第一电极（27）连接到第一导电半导体层。第二电极（29）连接到第二导电半导体层。电流扩散层（18）布置在第一导电半导体层上。

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