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    • 6. 发明公开
    • 레이저 어셈블리, 이것의 형성 방법 및 이것을 포함하는장치
    • 激光组件与集成光电二极管
    • KR1020070092172A
    • 2007-09-12
    • KR1020070022864
    • 2007-03-08
    • 에이저 시스템즈 엘엘시
    • 프런드조셉마이클
    • H01S3/0941H01S5/00
    • H01S5/0264H01L2224/48091H01S5/02276H01S5/0683H01S5/183H01L2924/00014
    • A laser assembly, an apparatus having the laser assembly, and a method for manufacturing the laser assembly are provided to control automatically the laser assembly by monitoring a secondary optical output from a lower DBR(Distributed Bragg Reflector) mirror using a photodiode. A laser assembly includes a substrate(110), at least one standoff(115), and a semiconductor laser. The substrate includes a first doping region and a second doping region. The second doping region is arranged to be close to an upper surface of the substrate. The second doping region forms a pn-junction with the first doping region. The semiconductor laser is used to radiate a light from upper and lower surfaces thereof. The semiconductor laser is attached to an upper surface of the substrate having the standoff such that the light from the lower surface of the laser diode collides with the second doping region.
    • 提供激光组件,具有激光组件的装置和用于制造激光组件的方法,以通过使用光电二极管监测来自下DBR(分布式布拉格反射器)镜的次级光输出来自动控制激光组件。 激光组件包括衬底(110),至少一个支座(115)和半导体激光器。 衬底包括第一掺杂区和第二掺杂区。 第二掺杂区域布置成靠近衬底的上表面。 第二掺杂区域与第一掺杂区域形成pn结。 半导体激光器用于从其上表面和下表面辐射光。 半导体激光器附接到具有支座的基板的上表面,使得来自激光二极管的下表面的光与第二掺杂区域相撞。
    • 10. 发明公开
    • 반도체 디바이스 및 그 제조 방법과 반도체 디바이스를 포함하는 장치
    • 具有减少应力电子阻挡层的基于氮化镓的半导体器件
    • KR1020090094091A
    • 2009-09-03
    • KR1020097012066
    • 2007-07-17
    • 에이저 시스템즈 엘엘시
    • 프런드조셉마이클
    • H01S5/323H01L33/14
    • H01S5/32341H01S5/2009H01S5/3201H01S5/3216
    • A semiconductor device comprises an active layer (350) and a cladding layer (370). An electron blocking layer (380) is at least partially disposed in a region between the active layer and the cladding layer and is configured to form a potential barrier to a flow of electrons from the active layer toward the cladding layer. The electron blocking layer comprises two elements from Group m of the periodic table and an element from Group V of the periodic table. One of the two elements from Group III of the periodic table has a concentration profile with a first portion that gradually increases in concentration in a direction away from the active layer toward the cladding layer and a second portion that gradually decreases in concentration between the first portion and the cladding layer.
    • 半导体器件包括有源层(350)和覆层(370)。 电子阻挡层(380)至少部分地设置在有源层和包覆层之间的区域中,并且被配置为形成从有源层朝向包层的电子流的势垒。 电子阻挡层包括来自元素周期表的第m族元素和元素周期表第Ⅴ族元素的两个元素。 周期表第III组的两个元素中的一个具有浓度分布,第一部分在远离有源层朝向包层的方向上逐渐增加浓度,第二部分在第一部分 和包覆层。