专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

KR100445191B1 단결정 잉곳 냉각용 수냉관 및 이를 이용한 단결정 잉곳성장장치 失效
标题翻译： 단결정잉곳냉각용수냉관및이를이용한단결정잉곳성장장치
公开(公告)号：KR100445191B1
公开(公告)日：2004-08-21
申请号：KR1020010071130
申请日：2001-11-15
申请人： 에스케이실트론 주식회사
发明人： 신현구 , 나광하 , 엄일수 , 박진택 , 김진노 , 이성욱
IPC分类号： C30B9/04
摘要： PURPOSE: A cooling water pipe for cooling single crystalline ingot is provided to obtain high pull up speed of the single crystalline ingot by preventing flow congestion of cooling water inside the pipe and cooling the single crystalline ingot promptly, and a single crystalline ingot growing apparatus using the cooling water pipe is provided. CONSTITUTION: In a cooling water pipe (100) for cooling single crystalline ingot comprising inner pipe and outer pipe, wherein cooling water inlet and outlet are respectively formed on the outer pipe so that cooling water flown in from the cooling water inlet (102a) passes through between the inner and outer pipes to be discharged into the cooling water outlet, the cooling water pipe for cooling single crystalline ingot is characterized in that a downward flow part (110) is additionally installed between the inner and outer pipes to forcibly flow the cooling water flown in from the cooling water inlet downward, wherein the downward flow part is first and second vertical weirs (112a,112b) vertically formed between the inner and outer pipes at the lower side of the cooling water inlet, and wherein first and second horizontal weirs (114a,114b) are additionally formed on the first and second vertical weirs so that the downward flowing cooling water is flown horizontally. In a single crystalline ingot growing apparatus comprising a growing chamber for growing a single crystalline ingot, a quartz crucible installed inside the growing chamber to contain a polysilicon melt, an electrical heater for heating the quartz crucible, a cooling water pipe formed on the inner side of the growing chamber to cool the single crystalline ingot and first and second sensing sensors installed on the outer side of the growing chamber to detect the meniscus between the single crystalline ingot and polysilicon melt, the single crystalline ingot growing apparatus is characterized in that the cooling water pipe comprises an inner pipe, an outer pipe on which cooling water inlet and outlets are respectively formed, and a downward flow part installed between the inner and outer pipes to forcibly flow the cooling water flown in from the cooling water inlet downward.
摘要翻译：目的：提供一种用于冷却单晶锭的冷却水管，以通过防止管内冷却水的流动堵塞并迅速冷却单晶锭而获得单晶锭的高拉起速度，以及使用单晶锭生长装置提供冷却水管。本发明涉及一种用于冷却包括内管和外管的单晶锭的冷却水管（100），其中冷却水入口和出口分别形成在外管上，使得从冷却水入口（102a）流入的冷却水通过通过内管和外管之间以排出到冷却水出口中，用于冷却单晶锭的冷却水管的特征在于在内管和外管之间额外地安装了向下流动部分（110）以强制地流动冷却从所述冷却水入口向下流入的水，其中所述向下流动部分是在所述冷却水入口的下侧处的所述内管和所述外管之间垂直形成的第一和第二竖直堰（112a，112b），并且其中，所述第一和第二水平在第一和第二垂直堰上额外形成堰（114a，114b），使得向下流动的冷却水水平地流动。在单晶铸锭生长设备中，包括用于生长单晶锭的生长室，安装在生长室内以容纳多晶硅熔体的石英坩埚，用于加热石英坩埚的电加热器，形成在内侧的冷却水管生长室冷却安装在生长室外侧的单晶锭和第一和第二传感传感器，以检测单晶锭和多晶硅熔体之间的弯液面，单晶锭生长装置的特征在于冷却水管包括内管，分别形成冷却水入口和出口的外管和安装在内管和外管之间以向下流动从冷却水入口流入的冷却水的向下流动部分。

2. 发明授权

KR100682585B1 단결정 성장 장치의 압력제어 시스템 및 이를 사용하는단결정 성장 공정의 압력 제어방법 有权
标题翻译： 단결정성장장치의압력제어시스템및이를사용하는단결정성장공정의압력제어방단결
公开(公告)号：KR100682585B1
公开(公告)日：2007-02-15
申请号：KR1020050117544
申请日：2005-12-05
申请人： 에스케이실트론 주식회사
发明人： 엄일수 , 신현구 , 나광하
IPC分类号： C30B15/20
摘要： A pressure control system of a single crystal growth apparatus and a pressure control method of a single crystal growth process using the same are provided to keep stably a high pressure state in a chamber and to improve the productivity of silicon crystal by controlling directly the suction of a pump without an additional pressure control unit using a controller. A pressure control system of a single crystal growth apparatus comprises a main pump for transferring a vacuum force into a chamber, an auxiliary pump for reinforcing the vacuum force of the main pump, a pressure gauge for measuring an inner pressure of the chamber, a controller for controlling the inner pressure of the chamber, and a wire for connecting the chamber, the pressure gauge, the main pump and the auxiliary pump with each other.
摘要翻译：提供一种单晶生长装置的压力控制系统和使用该单晶生长装置的单晶生长过程的压力控制方法，以稳定地保持腔室内的高压状态，并通过直接控制腔室内的吸入来提高硅晶体的生产率没有使用控制器的附加压力控制单元的泵。单晶生长设备的压力控制系统包括用于将真空力传送到室中的主泵，用于增强主泵的真空力的辅助泵，用于测量室的内部压力的压力计，控制器用于控制腔室的内部压力，以及用于将腔室，压力计，主泵和辅助泵彼此连接的线。

3. 发明公开

KR1020030034357A 단결정 잉곳 성장장치에서의 잉곳 직경 조절장치 및 잉곳직경 조절 방법 无效
标题翻译：用于控制单晶玻璃烧杯中的直径的装置和方法
公开(公告)号：KR1020030034357A
公开(公告)日：2003-05-09
申请号：KR1020010065187
申请日：2001-10-22
申请人： 에스케이실트론 주식회사
发明人： 신현구 , 나광하 , 엄일수
IPC分类号： C30B35/00
摘要： PURPOSE: An apparatus and a method for controlling diameter of ingot in single crystalline ingot grower are provided to grow a single crystalline ingot to a desired diameter by accurately measuring diameter of the single crystalline ingot. CONSTITUTION: The apparatus comprises meniscus temperature sensing means for simultaneously sensing temperature of two points of the meniscus that is an interfacial surface between polysilicon solution of quartz crucible (10) and single crystalline ingot (12) being growing; an ingot diameter detection means for detecting actual diameter of the single crystalline ingot by comparing average value of the temperature of the two points on the meniscus sensed by the meniscus temperature sensing means with a reference temperature value according to target diameter of the silicon ingot; a pull up driving means (150) for increasing or decreasing pull up speed of the silicon ingot by the actual diameter of the single crystalline ingot (12) detected in the ingot diameter detection means; and a heating means for increasing or decreasing temperature of the polysilicon solution according to increase or decrease of the pull up speed of the silicon ingot by the pull up driving means, wherein the meniscus temperature sensing means are first and second diameter sensing sensors (140a,140b) symmetrically formed on the same line, and the ingot diameter detection means comprises an input part (130) comprising an operation selecting part (132), and a controller (120).
摘要翻译：目的：提供一种用于控制单晶锭生长器中锭的直径的装置和方法，通过精确测量单晶锭的直径，将单晶锭生长至所需直径。构成：该装置包括半月板温度检测装置，用于同时检测作为生长的石英坩埚（10）的多晶硅溶液与单晶锭（12）之间的界面的半月板的两点的温度; 通过将由半月板温度检测装置检测到的弯液面上的两点的温度的平均值与硅锭的目标直径的参考温度值进行比较来检测单晶锭的实际直径的锭直径检测装置; 用于通过锭锭直径检测装置中检测到的单晶锭（12）的实际直径来提高或降低硅锭的上拉速度的上拉驱动装置（150）以及加热装置，用于根据上拉驱动装置对硅锭的上拉速度的增加或减小来增加或降低多晶硅溶液的温度，其中，弯液面温度检测装置是第一和第二直径感测传感器（140a， 140b），并且所述锭直径检测装置包括包括操作选择部（132）的输入部（130）和控制器（120）。

4. 发明公开

KR1020070068842A 단 결정 연속성장 장치 및 연속성장 방법 失效
标题翻译：连续晶体生长装置
公开(公告)号：KR1020070068842A
公开(公告)日：2007-07-02
申请号：KR1020050130886
申请日：2005-12-27
申请人： 에스케이실트론 주식회사
发明人： 이인규 , 신현구
IPC分类号： C30B15/10
摘要： A single crystal growing device and a method for continuously growing single crystal are provided to increase throughout of crystal ingot a unit time by growing the ingot in one furnace through a main process and an auxiliary process. A single crystal growing device includes an upper chamber(1) shaped in a tubular member and a pair of lower chambers(2) located at a downstream side of the upper chamber. The upper chamber is connected to one of the lower chambers by an intermediate chamber(3). The upper chamber is separated and moved by an upper chamber moving unit(7). The upper chamber moving unit has a clamping member for holding the upper chamber and a rotary member for pivotally moving the upper chamber.
摘要翻译：提供单晶生长装置和连续生长单晶的方法，通过在一个炉中通过主工艺和辅助工艺生长锭，从而在单晶时间段内增加晶锭的单晶时间。单晶生长装置包括成形为管状构件的上腔室（1）和位于上室的下游侧的一对下腔室（2）。上室通过中间室（3）连接到一个下室。上室由上室移动单元（7）分离和移动。上室移动单元具有用于保持上室的夹紧构件和用于使上室枢转的旋转构件。

5. 发明授权

KR100423753B1 실리콘 잉곳 성장을 위한 실리콘 융액 형성방법 失效
标题翻译： 실리콘잉곳성장을위한실리콘융액형성방법
公开(公告)号：KR100423753B1
公开(公告)日：2004-03-22
申请号：KR1020010075363
申请日：2001-11-30
申请人： 에스케이실트론 주식회사
发明人： 신현구
IPC分类号： C30B15/14
摘要： PURPOSE: A method for melting silicon and dopant is provided to grow a silicon ingot such that the silicon ingot has desired length and diameter by filling a predetermined amount of silicon melt in a quartz crucible. CONSTITUTION: A silicon ingot(101) is grown in one of silicon ingot grower chambers. The grown silicon ingot is transferred to other silicon ingot grower chambers(102). Then, silicon raw material is stacked in a quartz crucible accommodated in the silicon ingot grower chambers(102). First silicon melt is obtained by heating silicon raw material stacked in the quartz crucible. Then, the silicon ingot(101) is dipped into first silicon melt. After that, the silicon ingot(101) dipped into first silicon melt is melted, thereby forming second silicon melt having volume and weight greater than those of first silicon melt.
摘要翻译：目的：提供熔化硅和掺杂剂的方法以生长硅锭，从而通过将预定量的硅熔体填充在石英坩埚中而使硅锭具有期望的长度和直径。组成：硅锭（101）在硅锭生长室中的一个中生长。将生长的硅锭转移到其他硅锭生长室（102）。然后，将硅原料堆叠在容纳在硅锭生长室（102）中的石英坩埚中。通过加热堆积在石英坩埚中的硅原料来获得第一硅熔体。然后，将硅锭（101）浸入第一硅熔体中。之后，浸入第一硅熔体中的硅锭（101）熔化，从而形成体积和重量大于第一硅熔体的第二硅熔体。

6. 发明公开

KR1020030044573A 잉곳 성장용 챔버의 커버 失效
标题翻译： INGROT GROWER CHAMBER的封面
公开(公告)号：KR1020030044573A
公开(公告)日：2003-06-09
申请号：KR1020010075381
申请日：2001-11-30
申请人： 에스케이실트론 주식회사
发明人： 신현구 , 나광하 , 엄일수 , 박진택
IPC分类号： C30B15/10
摘要： PURPOSE: A cover of an ingot grower chamber is provided to achieve a cover adapted for the ingot grower chamber having superior pressure resistance characteristic and to enlarge a viewing angle by forming first and second windows. CONSTITUTION: A cover of an ingot grower chamber includes a cover body(100). The cover body(100) has a dome shape and is divided into an inner cover section(102) and an outer cover section(104), which are coupled to each other while being spaced from each other by a predetermined distance in such a manner that a cooling water flowing path is formed between the inner and outer cover sections(102,104). Cooling water flows through the cooling water flowing path. First and second view ports(108a) are formed by passing through the inner and outer cover sections(102,104). A flow rate varying device is provided at a predetermined portion of the cooling water flowing path so as to vary flow rate of cooling water.
摘要翻译：目的：提供锭种植室的盖子，以实现适用于具有优异的耐压特性的锭种植室的盖子，并通过形成第一和第二窗口来增大视角。构成：锭种植室的盖子包括盖体（100）。盖主体（100）具有圆顶形状并被分成内盖部分（102）和外盖部分（104），这两个部分彼此以相互间隔彼此间隔开预定距离在内盖部分（102,104）之间形成冷却水流动通道。冷却水流过冷却水流动路径。第一和第二视图端口（108a）通过穿过内盖部分和外盖部分（102,104）形成。在冷却水流路的规定部分设置有流量变化装置，以改变冷却水的流量。

7. 发明授权

KR100749937B1 단 결정 연속성장 장치 및 연속성장 방법 失效
标题翻译：连续晶体生长装置
公开(公告)号：KR100749937B1
公开(公告)日：2007-08-16
申请号：KR1020050130886
申请日：2005-12-27
申请人： 에스케이실트론 주식회사
发明人： 이인규 , 신현구
IPC分类号： C30B15/10
摘要： 본 발명은 단결정 성장의 주 공정과 보조 공정의 분리를 통해 한 개의 도가니에 한 개의 잉곳을 성장시키는 것으로 하되 주 공정과 전후 처리 보조 공정을 병렬로 진행하여 각각의 성장 챔버가 주 공정 순서가 되면 성장 수용 챔버에 체결되어 잉곳을 성장하도록 하는 것이다. 따라서 본 발명의 구성에 따르면, 단결정 잉곳의 단위 시간당 생산성이 증가될 수 있다.
연속성장, 한쌍의 하부챔버, 상부챔버, 단결정, 병렬

8. 发明公开

KR1020030044559A 실리콘 잉곳 성장을 위한 실리콘 융액 형성방법 失效
标题翻译：用于生产硅胶的硅和掺杂剂的方法
公开(公告)号：KR1020030044559A
公开(公告)日：2003-06-09
申请号：KR1020010075363
申请日：2001-11-30
申请人： 에스케이실트론 주식회사
发明人： 신현구
IPC分类号： C30B15/14
摘要： PURPOSE: A method for melting silicon and dopant is provided to grow a silicon ingot such that the silicon ingot has desired length and diameter by filling a predetermined amount of silicon melt in a quartz crucible. CONSTITUTION: A silicon ingot(101) is grown in one of silicon ingot grower chambers. The grown silicon ingot is transferred to other silicon ingot grower chambers(102). Then, silicon raw material is stacked in a quartz crucible accommodated in the silicon ingot grower chambers(102). First silicon melt is obtained by heating silicon raw material stacked in the quartz crucible. Then, the silicon ingot(101) is dipped into first silicon melt. After that, the silicon ingot(101) dipped into first silicon melt is melted, thereby forming second silicon melt having volume and weight greater than those of first silicon melt.
摘要翻译：目的：提供一种熔化硅和掺杂剂的方法，以生长硅锭，使得硅锭通过在石英坩埚中填充预定量的硅熔体而具有期望的长度和直径。构成：硅锭（101）生长在硅锭种植室之一中。将生长的硅锭转移到其它硅锭种植室（102）。然后，将硅原料层叠在容纳在硅锭种植室（102）中的石英坩埚中。通过加热层叠在石英坩埚中的硅原料来获得第一硅熔体。然后，将硅锭（101）浸入第一硅熔体中。之后，浸入第一硅熔体中的硅锭（101）熔化，从而形成体积和重量大于第一硅熔体的体积和重量的第二硅熔体。

9. 发明公开

KR1020030040950A 실리콘 단결정 잉곳 성장 장치 失效
标题翻译：用于生长单晶硅的装置
公开(公告)号：KR1020030040950A
公开(公告)日：2003-05-23
申请号：KR1020010071627
申请日：2001-11-17
申请人： 에스케이실트론 주식회사
发明人： 신현구
IPC分类号： C30B15/00
摘要： PURPOSE: An apparatus for growing single crystalline silicon ingot is provided to measure accurate temperature of silicon melt by using a temperature measuring means installed adjacently to the surface of the silicon melt. CONSTITUTION: The apparatus for growing single crystalline silicon ingot comprises a chamber(100); a quartz crucible(104) installed in the chamber so that the quartz crucible contains silicon melt(102); a crucible support(108) fixed onto a driving unit(106) for rotating the quartz crucible; a cylindrical heater(110) for encircling the crucible support; a cylindrical cooling water pipe(114) installed on a path through which an ingot grown from the silicon melt passes so that the silicon ingot(126) is cooled by the cooling water pipe; and a temperature detection means(120) formed inside the cooling water pipe to detect temperature of the silicon melt, wherein the temperature detection means comprises window(116), optical fiber(118), temperature detector(122), and controller(124), wherein the window is sealed with being screw connected to the cooling water pipe.
摘要翻译：目的：提供用于生长单晶硅锭的装置，以通过使用安装在硅熔体表面附近的温度测量装置来测量硅熔体的精确温度。构成：用于生长单晶硅锭的装置包括一个室（100）; 安装在所述室中的石英坩埚（104），使得所述石英坩埚含有硅熔体（102）; 固定在用于旋转石英坩埚的驱动单元（106）上的坩埚支架（108）用于环绕所述坩埚支撑件的圆柱形加热器（110）; 圆柱形冷却水管（114），其安装在从硅熔体生长的锭通过的路径上，使得硅锭（126）被冷却水管冷却; 以及温度检测装置，形成在所述冷却水管内，以检测所述硅熔体的温度，其中所述温度检测装置包括窗口（116），光纤（118），温度检测器（122）和控制器（124）其中所述窗口通过螺纹连接到所述冷却水管被密封。

10. 发明公开

KR1020030040713A 단결정 잉곳 냉각용 수냉관 및 이를 이용한 단결정 잉곳성장장치 失效
标题翻译：冷却水管用于冷却单晶入口和单晶入口加工设备
公开(公告)号：KR1020030040713A
公开(公告)日：2003-05-23
申请号：KR1020010071130
申请日：2001-11-15
申请人： 에스케이실트론 주식회사
发明人： 신현구 , 나광하 , 엄일수 , 박진택 , 김진노 , 이성욱
IPC分类号： C30B9/04
摘要： PURPOSE: A cooling water pipe for cooling single crystalline ingot is provided to obtain high pull up speed of the single crystalline ingot by preventing flow congestion of cooling water inside the pipe and cooling the single crystalline ingot promptly, and a single crystalline ingot growing apparatus using the cooling water pipe is provided. CONSTITUTION: In a cooling water pipe (100) for cooling single crystalline ingot comprising inner pipe and outer pipe, wherein cooling water inlet and outlet are respectively formed on the outer pipe so that cooling water flown in from the cooling water inlet (102a) passes through between the inner and outer pipes to be discharged into the cooling water outlet, the cooling water pipe for cooling single crystalline ingot is characterized in that a downward flow part (110) is additionally installed between the inner and outer pipes to forcibly flow the cooling water flown in from the cooling water inlet downward, wherein the downward flow part is first and second vertical weirs (112a,112b) vertically formed between the inner and outer pipes at the lower side of the cooling water inlet, and wherein first and second horizontal weirs (114a,114b) are additionally formed on the first and second vertical weirs so that the downward flowing cooling water is flown horizontally. In a single crystalline ingot growing apparatus comprising a growing chamber for growing a single crystalline ingot, a quartz crucible installed inside the growing chamber to contain a polysilicon melt, an electrical heater for heating the quartz crucible, a cooling water pipe formed on the inner side of the growing chamber to cool the single crystalline ingot and first and second sensing sensors installed on the outer side of the growing chamber to detect the meniscus between the single crystalline ingot and polysilicon melt, the single crystalline ingot growing apparatus is characterized in that the cooling water pipe comprises an inner pipe, an outer pipe on which cooling water inlet and outlets are respectively formed, and a downward flow part installed between the inner and outer pipes to forcibly flow the cooling water flown in from the cooling water inlet downward.
摘要翻译：目的：提供一种用于冷却单晶锭的冷却水管，以通过防止管内冷却水的流动拥挤并迅速冷却单晶锭，获得单晶锭的高上拉速度，以及使用单晶锭生长装置提供冷却水管。构成：在用于冷却包括内管和外管的单晶锭的冷却水管（100）中，其中分别在外管上形成冷却水入口和出口，使得从冷却水入口（102a）流出的冷却水通过通过内管和外管排出到冷却水出口之间，用于冷却单晶锭的冷却水管的特征在于，在内管和外管之间附加地安装向下流动部分（110），以强制地将冷却从冷却水入口向下流动的水，其中向下流动部分是在冷却水入口下侧的内管和外管之间垂直形成的第一和第二垂直堰（112a，112b），并且其中第一和第二水平堰（114a，114b）另外形成在第一和第二垂直堰上，使得向下流动的冷却水水平地流动。在包括用于生长单晶锭的生长室的单晶锭生长装置中，安装在生长室内部以容纳多晶硅熔体的石英坩埚，用于加热石英坩埚的电加热器，形成在内侧的冷却水管的生长室以冷却安装在生长室的外侧上的单晶锭和第一和第二感测传感器以检测单晶锭和多晶硅熔体之间的弯液面，其中单晶锭生长装置的特征在于冷却水管包括内管，分别形成有冷却水入口和出口的外管，以及安装在内管和外管之间的向下流动部分，以强制地将从冷却水入口流入的冷却水向下流动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式