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1. 发明授权

KR101060743B1 반-응고 금속 합금의 처리 방법 및 장치 有权
标题翻译：空值
公开(公告)号：KR101060743B1
公开(公告)日：2011-08-31
申请号：KR1020057014765
申请日：2004-02-03
申请人： 씨에스아이알
发明人： 브루워레티프 , 윌킨스제레미아스다니엘 , 이반체브릴리안흐리스토브 , 로소우피에르 , 담올리버프랑크루돌프오거스트
IPC分类号： C22C1/00
CPC分类号： C22C1/005 , Y10S164/90
摘要： Apparatus for producing a semi-solid metal alloy from a molten charge includes vertically aligned treatment zones which are provided by vertically aligned passages defined by a plurality of spirally wound flow pipes which are interspersed between spirally wound induction coils. A container is mounted on a charging arrangement which displaces a first charge upwardly into the first treatment zone. Successive charges are introduced in a similar fashion thereby urging the previously introduced charge upwardly along the train of zones and until the leading charge is ejected from the top of the apparatus. The charge in each zone is subjected to controlled cooling and an induced electromagnetic field. The strength of the field and the rate of cooling are controlled to impede dendritic crystallisation and to promote globular primary crystal formation.
摘要翻译：用于从熔融炉料生产半固体金属合金的装置包括垂直排列的处理区，其由垂直对齐的通道所限定，该多个螺旋卷绕的流管被散布在螺旋卷绕的感应线圈之间。将容器安装在充电装置上，将第一充电向上移动到第一处理区。以相似的方式引入连续电荷，从而沿着区域列向上推动先前引入的电荷，并且直到引导电荷从装置的顶部排出。每个区域的电荷受到受控冷却和感应电磁场。控制场强和冷却速率以阻止树枝状结晶并促进球状初晶形成。

2. 发明公开

KR1020050114618A 반-응고 금속 합금의 처리 방법 및 장치 有权
标题翻译：用于处理半固体金属合金的方法和装置
公开(公告)号：KR1020050114618A
公开(公告)日：2005-12-06
申请号：KR1020057014765
申请日：2004-02-03
申请人： 씨에스아이알
发明人： 브루워레티프 , 윌킨스제레미아스다니엘 , 이반체브릴리안흐리스토브 , 로소우피에르 , 담올리버프랑크루돌프오거스트
IPC分类号： C22C1/00
CPC分类号： C22C1/005 , Y10S164/90
摘要： Apparatus (10) for producing a semi- solid metal alloy from a molten charge includes vertically aligned treatment zones (12, 12.1) and (12.2) which are provided by vertically aligned passages defined by a plurality of spirally wound flow pipes (132) which are interspersed between spirally wound induction coils (130). A container (14) is mounted on a charging arrangement (20) which displaces a first charge upwardly into the first treatment zone (12). Successive charges are introduced in a similar fashion thereby urging the previously introduced charge upwardly along the train of zones (12, 12.1 and 12.2) until the leading charge is ejected from the top of the apparatus (10). The charge in each zone is subjected to controlled cooling and an induced electromagnetic field. The strength of the field and the rate of cooling are controlled to impede dendritic crystallisation and to promote globular primary crystal formation.
摘要翻译：用于从熔融电荷产生半固体金属合金的设备（10）包括垂直对齐的处理区（12,12.1）和（12.2），其由多个螺旋卷绕的流动管（132）限定的垂直对齐的通道提供，分散在螺旋卷绕的感应线圈（130）之间。容器（14）安装在充电装置（20）上，该充电装置将第一充电向上移动到第一处理区（12）中。以相似的方式引入连续的电荷，从而沿着区域列（12,12.1和12.2）向上推动先前引入的电荷，直到引导电荷从设备（10）的顶部排出。每个区域的电荷受到受控冷却和感应电磁场。控制场强和冷却速率以阻止树枝状结晶并促进球状初晶形成。

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