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    • 6. 发明授权
    • 미니 범프 형성을 통한 고강도 솔더 범프 제조 방법
    • 通过形成微小BUMP制造高强度焊接块的方法
    • KR100871066B1
    • 2008-11-27
    • KR1020070073321
    • 2007-07-23
    • 성균관대학교산학협력단
    • 정승부김종웅이창용주진호
    • H01L23/48H01L21/60
    • H01L2224/13
    • The method for manufacturing the high intensity solder bump is provide to improve the electrical mechanical reliability by formation of the metal mini bump. The method for fabricating a high intensity solder bump is provided. A step is for forming the thin conductive film(20) in the substrate. A step is for forming the insulating layer(22) on the thin conductive film. A step is for coating photoresist or the dry film and patterning. A step is for removing photoresist or the dry film by etching the insulating layer. A step is for forming a mini bump. A step is for reflowing the solder to form the solder bump. The mini bump is made of the CuNi nickel - lead or the gold by using electroplating or the electroless plating. The height of the mini bump is 100 micro meters or over 10 micro meters. The substrate is formed with a silicon wafer compound semiconductor wafer quartz glass or a ceramic material.
    • 提供高强度焊料凸块的制造方法是通过形成金属微型凸块来提高电气机械可靠性。 提供了制造高强度焊料凸块的方法。 步骤是在衬底中形成薄导电膜(20)。 在薄导电膜上形成绝缘层(22)的步骤。 一步是涂覆光致抗蚀剂或干膜并进行图案化。 通过蚀刻绝缘层来去除光致抗蚀剂或干膜的步骤。 一个步骤是形成一个迷你凸块。 一个步骤是回流焊料以形成焊料凸块。 迷你凸块由CuNi镍铅或金通过使用电镀或无电镀制成。 迷你凸块的高度为100微米或超过10微米。 基板由硅晶片化合物半导体晶片石英玻璃或陶瓷材料形成。