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1. 发明公开

KR1020010029894A 반도체 디바이스 失效
标题翻译：半导体器件
公开(公告)号：KR1020010029894A
公开(公告)日：2001-04-16
申请号：KR1020000038522
申请日：2000-07-06
申请人： 샤프 가부시키가이샤
发明人： 나즈다스티븐픈피터
IPC分类号： H01S5/18
CPC分类号： H01S5/32325 , B82Y20/00 , H01L33/02 , H01S5/3072 , H01S5/323 , H01S5/34326
摘要： PURPOSE: A semiconductor device is provided to, which reduces the density of absorption defects in the second semiconductor layer, thus improving the characteristics of the layer. CONSTITUTION: A semiconductor device has a blocking layer(17) disposed between the substrate(10) and the active layer(13). The blocking layer inhibits the propagation of anti-phase domain defects(APDs) into the active layer(13). This decreases the density of defects in the active layer(13), and improves the performance characteristics of the laser device. The blocking layer(17) is disposed either wholly within one of the layers of the laser device, or at the interface between two layers of the laser device. The bandgap of the blocking layer is preferably substantially equal to the bandgap of the layer in which it is disposed, or to the bandgap of a layer to which it is adjacent. This prevents the formation of a potential barrier, or a potential well in the laser structure, so that provision of the blocking layer(17) does not affect the transport of carriers through the device. In one embodiment the device is a laser device and is fabricated in the(Al,Ga,In)P system.
摘要翻译：目的：提供半导体器件，其降低第二半导体层中的吸收缺陷的密度，从而改善该层的特性。构成：半导体器件具有设置在衬底（10）和有源层（13）之间的阻挡层（17）。阻挡层抑制反相畴缺陷（APD）向有源层（13）的传播。这降低了有源层（13）中的缺陷密度，并提高了激光器件的性能特性。阻挡层（17）完全设置在激光装置的一个层内，或者设置在激光装置的两层之间的界面处。阻挡层的带隙优选地基本上等于其所配置的层的带隙或与其相邻的层的带隙。这防止在激光器结构中形成势垒或势阱，使得提供阻挡层（17）不影响载流子通过器件的传输。在一个实施例中，该装置是激光装置，并且在（Al，Ga，In）P系统中制造。

2. 发明授权

KR100378504B1 반도체 디바이스 失效
标题翻译： 반도체디바이스
公开(公告)号：KR100378504B1
公开(公告)日：2003-03-31
申请号：KR1020000038522
申请日：2000-07-06
申请人： 샤프 가부시키가이샤
发明人： 나즈다스티븐픈피터
IPC分类号： H01S5/18
CPC分类号： H01S5/32325 , B82Y20/00 , H01L33/02 , H01S5/3072 , H01S5/323 , H01S5/34326
摘要： A semiconductor device has a blocking layer (17) disposed between the substrate (10) and the active layer (13). The blocking layer inhibits the propagation of anti-phase domain defects (APDs) into the active layer (13). This decreases the density of defects in the active layer (13), and improves the performance characteristics of the laser device. The blocking layer (17) is disposed either wholly within one of the layers of the laser device, or at the interface between two layers of the laser device. The bandgap of the blocking layer is preferably substantially equal to the bandgap of the layer in which it is disposed, or to the bandgap of a layer to which it is adjacent. This prevents the formation of a potential barrier, or a potential well in the laser structure, so that provision of the blocking layer (17) does not affect the transport of carriers through the device. In one embodiment the device is a laser device and is fabricated in the (Al,Ga,In)P system.
摘要翻译：半导体器件具有设置在衬底（10）和有源层（13）之间的阻挡层（17）。阻挡层抑制反相域缺陷（APD）传播到活性层（13）中。这减少了有源层（13）中缺陷的密度，并且改善了激光器器件的性能特性。阻挡层（17）或者全部设置在激光器设备的一个层内，或者设置在激光器设备的两个层之间的接口处。阻挡层的带隙优选地基本上等于其所布置的层的带隙或与其相邻的层的带隙。这防止了在激光器结构中形成势垒或势阱，使得提供阻挡层（17）不会影响载流子通过器件的传输。在一个实施例中，该装置是激光装置并且在（Al，Ga，In）P系统中制造。＆lt;图像＆GT;

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