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1. 发明公开

KR1020080078608A 자외선 리소그래피 시스템들 및 방법들 有权
标题翻译：紫外光谱的系统和方法
公开(公告)号：KR1020080078608A
公开(公告)日：2008-08-27
申请号：KR1020080016368
申请日：2008-02-22
申请人： 삼성전자주식회사 , 아이엠이씨 브이제트더블유
发明人： 로루쏘지앙프랑세스코 , 김인성 , 김병수 , 고달스안나마리 , 존키르릭 , 헤르만장
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/70433 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70283
摘要： A method for designing a lithographic mask, a lithographic mask, a method for setting the lithographic process, a system applied to the lithographic mask designing step, a computer program applied to the methods, and a method for transmitting the computer program are provided to compensate the shading effect generated in the deep UV lithographic process. A method for designing a lithographic mask comprises the steps of obtaining the initial setting to a lithographic mask containing a plurality of initial design features having the initial position; and applying at least one displacement to at least one of the initial design features to compensate the shading effect in case of the examination of a substrate using the lithographic mask corresponding to the changed design, and inducing the changed design from it. The at least one displacement applied to at least one of the initial design features is independent of at least one direction of the initial design.
摘要翻译：光刻掩模的设计方法，光刻掩模，设置光刻工艺的方法，应用于光刻掩模设计步骤的系统，应用于该方法的计算机程序以及发送计算机程序的方法被提供以补偿在深紫外光刻工艺中产生的阴影效应。一种用于设计光刻掩模的方法包括以下步骤：获得包含具有初始位置的多个初始设计特征的光刻掩模的初始设置; 以及将至少一个位移施加到所述初始设计特征中的至少一个，以在使用对应于所述改变的设计的所述光刻掩模检查衬底的情况下补偿所述阴影效应，并且从其引入改变的设计。应用于至少一个初始设计特征的至少一个位移与初始设计的至少一个方向无关。

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