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    • 2. 发明授权
    • 이미지 센서 및 그 제조 방법
    • 이미지센서및그제조방법
    • KR100745991B1
    • 2007-08-06
    • KR1020060076346
    • 2006-08-11
    • 삼성전자주식회사
    • 황성호이덕형문창록
    • H01L27/146
    • An image sensor and its manufacturing method are provided to improve photo sensitivity by reflecting and refracting the light in a high reflectivity using a reflective coating composed of a plurality of refractive layers. An image sensor includes a photoelectric transformation element(110) in a substrate(102), a reflective coating, and a microlens. The reflective coating(190) is formed on a surface of the substrate. The reflective coating is formed by stacking first and second refractive layers with each other. The microlens is formed on the other surface of the substrate corresponding to the position of the photoelectric transformation element. The refractive index of the first refractive layer is larger than that of the second refractive layer. The first refractive layer is made of silicon and the second refractive layer is made of silicon oxide.
    • 提供图像传感器及其制造方法以通过使用由多个折射层组成的反射涂层以高反射率反射和折射光来提高光敏性。 一种图像传感器包括衬底(102)中的光电变换元件(110),反射涂层和微透镜。 反射涂层(190)形成在基板的表面上。 反射涂层通过将第一和第二折射层彼此堆叠而形成。 微透镜形成在与光电转换元件的位置对应的基板的另一个表面上。 第一折射层的折射率大于第二折射层的折射率。 第一折射层由硅制成并且第二折射层由氧化硅制成。
    • 4. 发明公开
    • 이미지 센서 및 그 형성 방법
    • 图像传感器及其形成方法
    • KR1020080014261A
    • 2008-02-14
    • KR1020060075718
    • 2006-08-10
    • 삼성전자주식회사
    • 이윤기박병준이덕형김홍기황성호
    • H01L27/146
    • H01L27/14685H01L27/1462H01L27/14621H01L27/14636
    • An image sensor and a method for forming the same are provided to reduce an aspect ratio of the image sensor and a cross talk due to the white light penetrating between color filters, thereby improving a characteristic of the image sensor. A method for forming an image sensor comprises the steps of: forming an insulating film on a semiconductor substrate(110) on which a light receiving device(120) is formed; forming a groove(152,155,158) on the insulating film; forming a color filter(153,156,159) filling the groove; and forming a micro lens(160) on the color filter. The steps of forming a color filter comprises the steps of: forming a red filter(153) filling a first groove after forming the first groove on the insulating film; forming a green filter(156) filling a second groove after forming the second groove on the insulating film; and forming a blue filter(159) filling a third groove after forming the third groove on the insulating film.
    • 提供一种图像传感器及其形成方法,以减少图像传感器的纵横比和由于白光穿过滤色器而引起的串扰,从而提高图像传感器的特性。 一种用于形成图像传感器的方法包括以下步骤:在其上形成有光接收装置(120)的半导体衬底(110)上形成绝缘膜; 在绝缘膜上形成凹槽(152,155,158); 形成填充所述凹槽的滤色器(153,156,159) 以及在所述滤色器上形成微透镜(160)。 形成滤色器的步骤包括以下步骤:在形成绝缘膜上的第一凹槽之后,形成填充第一凹槽的红色滤色器(153); 在所述绝缘膜上形成所述第二槽之后,形成填充第二槽的绿色过滤器(156) 以及在所述绝缘膜上形成所述第三凹槽之后,形成填充第三凹槽的蓝色滤光器(159)。
    • 5. 发明授权
    • 이미지 센서 및 그 제조 방법
    • 图像传感器及其制造方法
    • KR100791337B1
    • 2008-01-03
    • KR1020060076343
    • 2006-08-11
    • 삼성전자주식회사
    • 황성호이덕형김성수김홍기문창록이윤기
    • H01L27/146
    • H01L27/14627H01L27/14621H01L27/14645
    • An image sensor and a method for fabricating the same are provided to improve reproducibility in a repetitive forming process of microlenses by preventing generation of a dead space between the microlenses. A plurality of unit pixel regions(100) are formed on a semiconductor substrate. A photoelectric conversion part is formed within the semiconductor substrate corresponding to each of the unit pixel regions. An interlayer dielectric is formed to cover the photoelectric conversion part and includes an opening part formed on an upper part of the photoelectric conversion part. A light transmitting part is formed to bury the opening part. A plurality of color filters corresponding to the photoelectric conversion part are formed on the light transmitting part. A microlens(400) includes a plurality of concentric patterns(410) formed within each of the unit pixel regions and a plurality of arc patterns(420) having the same center as the center of the concentric patterns.
    • 提供了一种图像传感器及其制造方法,以通过防止在微透镜之间产生死空间来提高微透镜的重复形成过程中的再现性。 多个单位像素区域(100)形成在半导体衬底上。 在对应于每个单位像素区域的半导体衬底内形成光电转换部分。 形成层间电介质以覆盖光电转换部,并且包括形成在光电转换部的上部的开口部。 形成透光部以埋置开口部。 在光透射部上形成有与光电转换部对应的多个滤色器。 微透镜(400)包括形成在每个单位像素区域内的多个同心图形(410)和与同心图案的中心具有相同中心的多个弧形图案(420)。
    • 7. 发明公开
    • 분리형 전자기기 및 이에 사용되는 연결 장치
    • 可拆卸的电子设备和可用于其的连接装置
    • KR1020140063345A
    • 2014-05-27
    • KR1020120133884
    • 2012-11-23
    • 삼성전자주식회사
    • 황성호허준영권기영
    • G06F1/16
    • G06F1/16G06F1/1601G06F1/1684
    • The present invention relates to a detachable electronic device including a tablet computer and a peripheral device where the table computer is detachably installed. The detachable electronic device comprises a connecting device installed at one end of the peripheral device and having the tablet computer detachably installed. The connecting device comprises a base installed at the peripheral device; a mounting groove formed at the base and one end of the tablet computer being inserted therein; a hook movably installed in parallel with the mounting groove at the bottom surface of the mounting groove; and a pressurizing member for pressurizing the hook in one direction. The tablet computer comprises an insertion groove formed at one end of the tablet computer for the hook to be inserted; a hanging end formed at one side of the insertion groove and the hook is hanged therein; and a pushing protrusion installed at the opposite side of the hanging end at the inside of the insertion groove.
    • 本发明涉及一种可拆卸电子设备,包括平板计算机和外围设备,其中台式计算机可拆卸地安装。 可拆卸电子装置包括安装在外围设备的一端并具有可拆卸地安装的平板计算机的连接装置。 连接装置包括安装在外围设备的基座; 形成在基座的安装槽和平板计算机的一端插入其中; 在安装槽的底面可移动地安装成与安装槽平行的钩; 以及用于在一个方向上对钩子加压的加压构件。 平板计算机包括形成在平板计算机的一端的插入槽,用于插入钩子; 形成在插入槽的一侧的悬挂端和钩悬挂在其中; 以及安装在插入槽内侧的悬挂端的相对侧的推动突起。
    • 8. 发明授权
    • 이미지 센서 제조 방법 및 이에 따라 제조된 이미지 센서
    • 用于制作图像传感器和图像传感器的方法
    • KR100791346B1
    • 2008-01-03
    • KR1020060122244
    • 2006-12-05
    • 삼성전자주식회사
    • 이윤기이덕형문창록황성호권두원유길상신승훈
    • H01L27/146
    • H01L27/14623H01L27/1464H01L27/14685
    • A method for fabricating an image sensor and an image sensor fabricated thereby are provided to remove an additional etching and a passivation layer by forming a light shielding layer of an optical black region with an organic material for shielding light. A semiconductor substrate including an active pixel sensor region(10) and an optical black region(20) is provided. A plurality of photoelectric conversion elements(110) are formed in the active pixel sensor region and the optical black region which are adjacent to a front surface of the semiconductor substrate. A wiring is formed on a top of a front surface of the semiconductor substrate in order to transmit signals of the photoelectric conversion elements. A polishing process is performed to polish a backside of the semiconductor substrate which is positioned opposite to the wiring. An organic layer pattern(400a) for shielding light is formed on the backside of the semiconductor substrate in order to cover the optical black region.
    • 提供一种用于制造图像传感器的方法和由此制造的图像传感器,以通过用用于屏蔽光的有机材料形成光学黑色区域的遮光层来除去附加蚀刻和钝化层。 提供了包括有源像素传感器区域(10)和光学黑色区域(20)的半导体衬底。 在与半导体衬底的前表面相邻的有源像素传感器区域和光学黑色区域中形成多个光电转换元件(110)。 为了传输光电转换元件的信号,在半导体衬底的前表面的顶部上形成布线。 进行抛光处理以抛光与布线相对定位的半导体衬底的背面。 为了覆盖光学黑色区域,在半导体衬底的背面形成用于屏蔽光的有机层图案(400a)。
    • 9. 发明授权
    • 이미지 센서 및 그 형성 방법
    • 图像传感器及其形成方法
    • KR100764061B1
    • 2007-10-08
    • KR1020060121670
    • 2006-12-04
    • 삼성전자주식회사
    • 황성호이덕형문창록
    • H01L27/146
    • H01L27/14625H01L27/14632H01L27/14636H01L27/1464H01L27/14685H01L27/14687H01L31/02165H01L31/02327
    • An image sensor and its forming method are provided to enhance a photo sensitivity by re-supplying the light into a photo diode using a base multi-layered reflection layer. An image sensor includes a pixel semiconductor pattern(110a) arranged on a substrate(300), an interlayer dielectric, a photo diode, a base multi-layered reflection layer and a sidewall multi-layered reflection layer. The interlayer dielectric is formed on the pixel semiconductor pattern and the substrate. The photo diode(145) is formed in the pixel semiconductor pattern. The base multi-layered reflection layer(155a) is interposed between the photo diode and the interlayer dielectric. The sidewall multi-layered reflection layer(220) is arranged on a sidewall of the pixel semiconductor pattern.
    • 提供了图像传感器及其形成方法,以通过使用基底多层反射层将光再次供应到光电二极管中来增强光敏性。 图像传感器包括布置在基板(300)上的像素半导体图案(110a),层间电介质,光电二极管,基底多层反射层和侧壁多层反射层。 在像素半导体图案和基板上形成层间电介质。 光电二极管(145)形成在像素半导体图案中。 基底多层反射层(155a)介于光电二极管和层间电介质之间。 侧壁多层反射层(220)布置在像素半导体图案的侧壁上。
    • 10. 发明授权
    • 시모스 이미지 센서 및 그 센서의 제조방법
    • 시모스이미지센서및그센서의제조방법
    • KR100688584B1
    • 2007-03-02
    • KR1020060000470
    • 2006-01-03
    • 삼성전자주식회사
    • 황성호이덕형박병준문창록
    • H01L27/146
    • A CMOS image sensor is provided to increase reflectivity caused by an isolation layer by forming the isolation layer made of two material layers having different refractivity. An epitaxial layer(200) of first conductivity type is formed on a substrate(100) of first conductivity type. Photodiodes(400) are formed on the epitaxial layer in each active region. Two material layers having different refractivity are alternately and vertically formed on the substrate to form an isolation layer(300) for isolating the active regions. The two material layers can be a silicon layer and a silicon oxide layer. The isolation layer can be composed of three layers of the silicon layer and silicon oxide layers formed on both sides of the silicon layer. The silicon oxide layers are connected to each other through the lower part of the silicon layer.
    • 提供CMOS图像传感器以通过形成由具有不同折射率的两个材料层构成的隔离层来增加由隔离层引起的反射率。 第一导电类型的外延层(200)形成在第一导电类型的衬底(100)上。 光电二极管(400)形成在每个有源区中的外延层上。 具有不同折射率的两个材料层交替地和垂直地形成在衬底上以形成用于隔离有源区的隔离层(300)。 两个材料层可以是硅层和氧化硅层。 隔离层可以由三层硅层和在硅层两侧上形成的氧化硅层组成。 氧化硅层通过硅层的下部彼此连接。