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    • 8. 发明公开
    • 손떨림 보정장치
    • 图像稳定器
    • KR1020110045343A
    • 2011-05-04
    • KR1020090101875
    • 2009-10-26
    • 삼성전자주식회사
    • 이진원정종삼정혜인
    • H04N5/232
    • H04N5/2253H04N5/23287
    • PURPOSE: A hand shaking correcting device is provided to realize a hand shaking correcting about a direction. CONSTITUTION: A movable frame(300) is movably allowed in a rotation direction about an up/down and right/left and an optical axis between a first and second yokes(100,200). A coil plate(400) has a pattern coils(411~414) for formation of magnetism to a location corresponding to a magnet(211~214). The coil plate moves the movable frame by interacting between the pattern coil and polarizing magnet. A support unit(500) supports the movable frame to a pitch/way/roll direction about the second yoke.
    • 目的:提供手摇校正装置,以实现关于方向的手抖动。 构成:可移动框架(300)沿着上下左右的旋转方向和第一和第二轭(100,200)之间的光轴可移动地被允许。 线圈板(400)具有用于在对应于磁体(211〜214)的位置形成磁性的图形线圈(411〜414)。 线圈板通过图案线圈和极化磁铁之间的相互作用移动可移动框架。 支撑单元(500)围绕第二轭支撑可移动框架到俯仰/方向/滚动方向。
    • 10. 发明授权
    • 반도체 소자 및 그 제조 방법
    • 半导体器件及其制造方法
    • KR100781547B1
    • 2007-12-03
    • KR1020060102443
    • 2006-10-20
    • 삼성전자주식회사
    • 이진원
    • H01L21/28H01L21/3205
    • H01L27/10888H01L27/10814H01L27/10855H01L27/10885
    • A semiconductor device and a method for fabricating the same are provided to implement a metal silicide film higher than contact pads by forming the metal silicide film on a contact plug for bit lines. A semiconductor device includes contact pads(114,116), a contact hole(132), a contact spacer(134), a first contact plug(142a), a metal silicide film(154), and a second contact plug(155). The contact pads are formed in a first interlayer dielectric(110) on a semiconductor substrate. The contact hole, which is formed on a second interlayer dielectric formed on the first interlayer dielectric, exposes selectively the contact pads. The contact spacer is formed at an inner wall of the contact hole. The first contact plug, which is connected with the contact hole, is filled in a part of the contact hole. The metal silicide film is formed on the first contact plug. The second contact plug, which is formed on the metal silicide film, is filled in the rest of the contact hole.
    • 提供半导体器件及其制造方法,通过在位线的接触插塞上形成金属硅化物膜来实现比接触焊盘高的金属硅化物膜。 半导体器件包括接触焊盘(114,116),接触孔(132),接触间隔物(134),第一接触插塞(142a),金属硅化物膜(154)和第二接触插塞(155)。 接触焊盘形成在半导体衬底上的第一层间电介质(110)中。 形成在形成在第一层间电介质上的第二层间电介质上的接触孔选择性地暴露接触焊盘。 接触间隔件形成在接触孔的内壁。 与接触孔连接的第一接触插塞被填充在接触孔的一部分中。 金属硅化物膜形成在第一接触插塞上。 在金属硅化物膜上形成的第二接触插塞填充在接触孔的其余部分中。