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    • 2. 发明公开
    • 형광체 및 이를 포함한 무기 전계 발광 소자
    • 荧光物质和无机电致发光器件
    • KR1020100083377A
    • 2010-07-22
    • KR1020090002721
    • 2009-01-13
    • 삼성전자주식회사
    • 정태원박상현배민종
    • C09K11/56C09K11/54C09K11/02H05B33/14
    • H05B33/14C09K11/025C09K11/565
    • PURPOSE: A fluorescent substance and an inorganic electroluminescence device including thereof are provided to decrease the driving voltage of the device by containing the fluorescent substance coated with a nanowire. CONSTITUTION: A fluorescent substance(24) contains a ZnS base material, and a nanowire coated on the surface of the base material. The nanowire is formed with CuO. The fluorescent substance has a diameter of 20~30 microns. The base material includes a needle formed with CuS. An inorganic electroluminescence device comprises a first electrode(10), a dielectric layer(15) located on the first electrode, an inorganic light-emitting layer(20) including the fluorescent substance, and a second electrode(25) located on the inorganic light-emitting layer.
    • 目的:提供包含荧光物质及其无机电致发光器件,通过含有涂覆有纳米线的荧光物质来降低器件的驱动电压。 构成:荧光物质(24)含有ZnS基材,纳米线涂覆在基材表面。 纳米线与CuO形成。 荧光物质的直径为20〜30微米。 基材包括用CuS形成的针。 无机电致发光器件包括第一电极(10),位于第一电极上的电介质层(15),包含荧光物质的无机发光层(20)和位于无机光上的第二电极(25) 发光层。
    • 3. 发明公开
    • 무기 전계발광소자 및 그 제조방법
    • 无机电致发光器件及其制备方法
    • KR1020100049974A
    • 2010-05-13
    • KR1020080109037
    • 2008-11-04
    • 삼성전자주식회사
    • 박상현배민종정태원고영철
    • H05B33/22
    • H05B33/22
    • PURPOSE: An inorganic electroluminescence device and a manufacturing method thereof are provided to improve the brightness and photonic efficiency by increasing an external optical extraction efficiency through a waveguide and a reflective film. CONSTITUTION: A dielectric layer(22) is formed on a bottom electrode(21). An inorganic light emitting layer(23) is formed on the dielectric layer. An upper electrode(24) is formed on the inorganic light emitting layer. A waveguide layer(25) is formed on the upper electrode. A waveguide layer is made of one among the PDMS(Polydimethylsiloxane) and SU-8 polymer. A reflective film(26) covers the waveguide layer. The reflective film has the light emission part. The thickness of the waveguide layer is 0.5 times or 5 times of the width of the emission part.
    • 目的:提供无机电致发光器件及其制造方法,通过增加通过波导和反射膜的外部光提取效率来提高亮度和光子效率。 构成:在底部电极(21)上形成介电层(22)。 无机发光层(23)形成在电介质层上。 在无机发光层上形成上电极(24)。 在上电极上形成波导层(25)。 波导层由PDMS(聚二甲基硅氧烷)和SU-8聚合物之一制成。 反射膜(26)覆盖波导层。 反射膜具有发光部。 波导层的厚度是发射部分宽度的0.5倍或5倍。
    • 4. 发明授权
    • 전계방출소자의 에이징 방법
    • 老化场发射装置的方法
    • KR100846503B1
    • 2008-07-17
    • KR1020060116040
    • 2006-11-22
    • 삼성전자주식회사
    • 백찬욱김선일정득석송병권배민종
    • H01J9/44H01J1/30H01J9/42
    • H01J9/42H01J29/04H01J31/127
    • A method for aging a field emission device is provided to decrease an error rate of a display device by repairing a short-circuit portion of the tri-pole field emission device. A tri-pole field emission device includes a cathode electrode(110), an anode electrode(140), a gate electrode(120), an insulation layer(125), and an emitter(130). The gate electrode is laminated on the cathode electrode. The insulation layer is formed between the cathode and gate electrodes. The emitter is formed in an emitter hole, which is formed on the gate electrode. The emitter is formed on the cathode electrode to be connected to the cathode electrode. The emitter is made of one of CNT(Carbon Nano Tube), silicon, and molybdenum.
    • 提供一种用于老化场发射器件的方法,通过修复三极场发射器件的短路部分来降低显示器件的误码率。 三极场发射装置包括阴极电极(110),阳极电极(140),栅电极(120),绝缘层(125)和发射极(130)。 栅电极层叠在阴极上。 绝缘层形成在阴极和栅电极之间。 发射极形成在形成在栅电极上的发射极孔中。 发射极形成在阴极上,与阴极连接。 发射极由CNT(碳纳米管),硅和钼制成。
    • 10. 发明公开
    • 전자 증폭 전극 및 이를 이용한 테라헤르츠 발진기
    • 电子倍增器电极和TERAHERTZ辐射源使用相同
    • KR1020080065147A
    • 2008-07-11
    • KR1020070002168
    • 2007-01-08
    • 삼성전자주식회사
    • 백찬욱진용완김선일배민종
    • H01J43/06H01J1/30
    • H01J43/04H01J1/30C01B32/05H01J43/06
    • An electron multiplier electrode and a terahertz oscillator using the same are provided to generate an electron beam having high current density by discharging secondary electrons without loss. An emitter(33) is arranged on a cathode electrode(31). The emitter discharges an electron beam. A gate electrode(32) is arranged on the cathode electrode to enclose the emitter. The gate electrode switches the electron beam. Discharge electrodes(34a,34b) are arranged on the gate electrode. The discharge electrodes have secondary electron discharge layers(35a,35b) from which secondary electrons are discharged by a collision with the electron beam. Plural secondary electron discharge electrodes having the same structure are successively arranged in a movement direction of the electron beam. Holes are formed on central parts of the gate electrode and the secondary electron discharge electrode. The secondary electron discharge layer is applied on the whole surface of the secondary electron discharge electrode.
    • 提供电子倍增器电极和使用该电子倍增器电极的太赫兹振荡器,以通过不损失地放电二次电子来产生具有高电流密度的电子束。 发射极(33)布置在阴极电极(31)上。 发射极放电电子束。 在阴极电极上配置栅电极(32)以包围发射极。 栅电极切换电子束。 放电电极(34a,34b)布置在栅电极上。 放电电极具有二次电子通过与电子束的碰撞而被排出的二次电子放电层(35a,35b)。 具有相同结构的多个二次电子放电电极依次排列在电子束的移动方向上。 在栅电极和二次电子放电电极的中心部分上形成孔。 在二次电子放电电极的整个表面上施加二次电子放电层。