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    • 10. 发明公开
    • 반도체 소자의 제조방법
    • 具有偏移单个间隔器的双极式漏极的半导体DRAM器件及其制造方法
    • KR1020110057853A
    • 2011-06-01
    • KR1020090114439
    • 2009-11-25
    • 삼성전자주식회사
    • 김성환야마다사토루
    • H01L21/8242H01L27/108
    • H01L27/10894H01L27/10852H01L27/10873H01L27/10876H01L28/91H01L29/495H01L29/4966H01L29/517H01L29/6653H01L29/6659H01L29/66628
    • PURPOSE: A dram semiconductor with a low density source drain using an offset single spacer and a manufacturing method thereof are provided to improve an operation voltage by forming a low density impurity after a high density impurity is formed. CONSTITUTION: An OSS(Offset Single Spacer) nitrification layer(144) is formed on a first oxide layer(142). A second oxide layer spacer is formed on the OSS nitrification layer. A high density source and drain layer is formed on a semiconductor substrate(100). A nitrification layer spacer is formed by anisotropically etching the OSS nitrification layer. A low density impurity layer is formed by using the nitrification layer spacer. An interlayer insulation layer(160) with a capacitor electrode structure is formed on the semiconductor substrate and the gate electrode.
    • 目的:提供使用偏移单间隔物的具有低密度源极漏极的串联半导体及其制造方法,以在形成高密度杂质之后形成低密度杂质来提高工作电压。 构成:在第一氧化物层(142)上形成OSS(Offset Single Spacer)硝化层(144)。 在OSS硝化层上形成第二氧化物层隔离物。 在半导体衬底(100)上形成高密度源极和漏极层。 通过各向异性蚀刻OSS硝化层形成硝化层间隔物。 通过使用硝化层间隔物形成低密度杂质层。 在半导体衬底和栅电极上形成具有电容器电极结构的层间绝缘层(160)。