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    • 2. 发明授权
    • 태양전지 및 그 제조방법
    • 太阳能电池及其制造方法
    • KR100853245B1
    • 2008-08-21
    • KR1020070036362
    • 2007-04-13
    • 삼성전기주식회사
    • 이로운정재우김용식서상훈김태구
    • H01L31/04H01L31/0224H01L31/0216H01L31/06
    • Y02E10/50H01L31/04H01L31/0216H01L31/0224H01L31/06
    • A solar cell is provided to fabricate a light condensing apparatus of high efficiency by embodying a transparent electrode and/or a light condensing layer by an inkjet method wherein the transparent electrode and/or the light condensing layer is made of a micro hemispherical lens shape. A transparent electrode of a micro lens shape is formed on one surface of a transparent substrate by an inkjet method(100). An n-type semiconductor and a p-type semiconductor are sequentially coated to cover the transparent electrode(110). Electrodes are deposited on the transparent electrode and the p-type semiconductor(120). A light condensing layer of a micro lens shape can be stacked on the other surface of the transparent substrate wherein the light condensing layer can be printed by an inkjet method(130).
    • 提供了一种太阳能电池,其通过利用喷墨法实现透明电极和/或聚光层来制造高效率的聚光装置,其中透明电极和/或聚光层由微半球透镜形状制成。 通过喷墨法(100)在透明基板的一个表面上形成微透镜形状的透明电极。 依次涂覆n型半导体和p型半导体以覆盖透明电极(110)。 电极沉积在透明电极和p型半导体(120)上。 微透镜形状的聚光层可以堆叠在透明基板的另一个表面上,其中聚光层可以通过喷墨方法(130)进行印刷。
    • 4. 发明公开
    • 태양전지 및 그 제조방법
    • 太阳能电池及其制造方法
    • KR1020100025943A
    • 2010-03-10
    • KR1020080084701
    • 2008-08-28
    • 삼성전기주식회사
    • 이로운정재우서상훈김태구
    • H01L31/04H01L31/18
    • H01L31/1804H01L31/03529H01L31/047H01L31/0543H01L31/0547H01L31/1884Y02E10/52Y02E10/547Y02P70/521
    • PURPOSE: A silicon thin film solar cell and a manufacturing method thereof are provided to broaden a light concentration surface area and improve the absorption rate of light by maximizing an area absorbing light through an anodizing. CONSTITUTION: A plurality of holes are formed on the single side of a substrate(10). A metal layer(20) is formed on the inner wall of the hole and the single side of the substrate. A p-type semiconductor(30) is coated on the metal layer. A n-type semiconductor(40) is formed on the inside of the hole and the single side of the substrate. A transparent electrode(50) is formed in the n-type semiconductor. An electrode terminal(60) is formed in the p-type semiconductor and the transparent electrode. The hole is formed by the anodizing process.
    • 目的:提供一种硅薄膜太阳能电池及其制造方法,以通过使通过阳极氧化吸收光的面积最大化来扩大光浓度表面积并提高光吸收率。 构成:在基板(10)的单面上形成多个孔。 在孔的内壁和基板的单面上形成金属层(20)。 p型半导体(30)涂覆在金属层上。 在孔的内侧和基板的单面上形成n型半导体(40)。 在n型半导体中形成透明电极(50)。 在p型半导体和透明电极中形成电极端子(60)。 该孔由阳极氧化处理形成。