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    • 3. 发明公开
    • 전자 방출원 형성용 조성물, 이를 이용하여 제조된 전자방출원 및 이를 채용한 전자 방출 소자
    • 用于制备电子发射体的组合物,使用其制备的电子发射体和电子发射装置
    • KR1020090025984A
    • 2009-03-11
    • KR1020070091228
    • 2007-09-07
    • 삼성에스디아이 주식회사
    • 남중우박종환최영철
    • H01J1/30H01J9/02
    • A composition for preparing an electron emitter, an electron emitter prepared therefrom and an electron emission device using the same are provided to improve the surface resistance uniformity by appropriately controlling the content of the filler of the emitter composition. An anode electrode(180) is arranged at the lower-part(190a) of the top substrate(190). The fluorescent material layer(170) is arranged at the lower-part(180a) of the anode electrode. A cathode electrode(120) is arranged as stripe-like on a bottom substrate(110). A gate electrode(140) is arranged as stripe-like in order to be intersected with the cathode electrode. An insulator layer(130) is arranged between the gate electrode and the cathode electrode. An emitter hole(169) is formed in a part of the gate electrode and the insulator layer. An emitter(160) is arranged within the emitter hole.
    • 提供了一种用于制备电子发射体的组合物,由其制备的电子发射体和使用该组合物的电子发射装置,以通过适当地控制发射体组合物的填料的含量来改善表面电阻的均匀性。 在顶部基板(190)的下部(190a)处布置有阳极电极(180)。 荧光材料层(170)布置在阳极电极的下部(180a)处。 阴极电极(120)在底部基板(110)上被布置为条状。 栅电极(140)被布置为条状以便与阴极相交。 绝缘体层(130)布置在栅电极和阴极之间。 在栅电极和绝缘体层的一部分中形成发射极(169)。 发射极(160)布置在发射极孔内。
    • 4. 发明公开
    • 전자 방출 소자 및 이를 구비한 전자 방출 표시 소자
    • 电子发射装置和电子发射显示装置
    • KR1020080082378A
    • 2008-09-11
    • KR1020070023172
    • 2007-03-08
    • 삼성에스디아이 주식회사
    • 최영철정광석이병곤박종환
    • H01J1/304C01B31/02B82Y40/00
    • H01J1/304B82Y40/00C01B2202/34H01J2201/30469
    • An electron emission device and an electron emission display device are provided to enhance electron emission efficiency by effectively growing a CNT(Carbon Nano Tube) in the electron emission device. A cathode electrode(120) is arranged on a base substrate(110). An auxiliary catalyst layer(260) covers at least a portion of the cathode electrode. A gate electrode(140) is arranged to be electrically insulated from the cathode electrode and the auxiliary catalyst layer. A first insulation layer(130) is arranged between the cathode electrode and the gate electrode and insulates the cathode electrode from the gate electrode. An electron emission source hole for exposing a portion of the cathode electrode is formed on the first insulation layer, the gate electrode, and the auxiliary catalyst layer. An electron emission source(250) is arranged to be connected to the cathode electrode inside the electron emission source hole.
    • 提供电子发射装置和电子发射显示装置,以通过在电子发射装置中有效地生长CNT(碳纳米管)来提高电子发射效率。 阴极电极(120)设置在基底(110)上。 辅助催化剂层(260)覆盖阴极电极的至少一部分。 栅电极(140)被布置成与阴极电极和辅助催化剂层电绝缘。 第一绝缘层(130)设置在阴极电极和栅电极之间,并使阴极与栅电极绝缘。 在第一绝缘层,栅电极和辅助催化剂层上形成用于暴露阴极电极的一部分的电子发射源孔。 电子发射源(250)被布置成连接到电子发射源孔内的阴极电极。
    • 5. 发明公开
    • 전자 방출 소자, 이를 구비한 전자 방출 디스플레이 장치및 이의 제조방법
    • 电子发射装置,具有该电子发射装置的电子发射显示装置及其制造方法
    • KR1020080082338A
    • 2008-09-11
    • KR1020070023095
    • 2007-03-08
    • 삼성에스디아이 주식회사
    • 최영철정광석김하진한인택박종환
    • H01J1/30H01J9/02C01B31/02B82Y40/00
    • H01J1/30B82Y40/00H01J9/025H01J2201/30449H01J2329/0455
    • An electron emission device, an electron emission display device having the same, and a method for manufacturing the electron emission display device are provided to reduce power consumption of the display device by lowering an operation voltage of the electron emission device. An electron emission device includes a first substrate(310), a cathode electrode(320), a gate electrode(340), an insulation layer(330), a catalyst growing layer(370), and an electron emission source(325). The cathode electrode is arranged on the first substrate. The gate electrode is arranged to be electrically insulated from the cathode electrode. The insulation layer is arranged between the cathode electrode and the gate electrode and insulates the cathode electrode from the gate electrode. The catalyst growing layer is arranged on the cathode electrode. The electron emission source includes a CNT(Carbon Nano Tube), which is vertically grown on the catalyst growing layer.
    • 提供电子发射装置,具有该电子发射装置的电子发射显示装置和制造电子发射显示装置的方法,以通过降低电子发射装置的工作电压来降低显示装置的功耗。 电子发射器件包括第一衬底(310),阴极电极(320),栅电极(340),绝缘层(330),催化剂生长层(370)和电子发射源(325)。 阴极电极配置在第一基板上。 栅电极被布置成与阴极电绝缘。 绝缘层设置在阴极电极和栅电极之间,并使阴极与栅电极绝缘。 催化剂生长层设置在阴极上。 电子发射源包括在催化剂生长层上垂直生长的CNT(碳纳米管)。
    • 7. 发明公开
    • 전자 방출 소자 및 그 제조방법
    • 电子发射装置及其制备方法
    • KR1020070014742A
    • 2007-02-01
    • KR1020050069640
    • 2005-07-29
    • 삼성에스디아이 주식회사
    • 최영철박종환
    • H01J1/304H01J9/02C01B31/02B82Y40/00
    • H01J1/304B82Y40/00H01J9/025H01J2201/30453H01J2201/30469
    • An electron emission device and a preparing method thereof are provided to improve current density and electron emission lifetime by forming a coating layer having a band gap material on an electron emission source. A first substrate(110) and a second substrate are disposed to each other. A cathode electrode(120) is formed on the first substrate. An electron emission source(160) is electrically connected with the cathode electrode formed on the substrate and includes a carbon-based material. An anode electrode(180) is formed on the second substrate. A phosphor layer(170) is used for radiating light by using electrons emitted from the electron emission source. A coating layer is formed on the electron emission source. The coating layer is formed of a band gap material.
    • 提供电子发射器件及其制备方法,通过在电子发射源上形成具有带隙材料的涂层来改善电流密度和电子发射寿命。 第一基板(110)和第二基板彼此配置。 阴极电极(120)形成在第一基板上。 电子发射源(160)与形成在基板上的阴极电连接并且包括碳基材料。 在第二基板上形成阳极电极(180)。 荧光体层(170)用于通过使用从电子发射源发射的电子来照射光。 在电子发射源上形成涂层。 涂层由带隙材料形成。
    • 8. 发明公开
    • 냉음극 전자원과 이의 제조 방법
    • 冷阴极电子源及其制作方法
    • KR1020030081665A
    • 2003-10-22
    • KR1020020020006
    • 2002-04-12
    • 삼성에스디아이 주식회사
    • 안지훈최영철이혁복한동희
    • H01J1/30C01B31/02B82Y40/00
    • PURPOSE: An electron source of a cold cathode and a fabricating method thereof are provided to increase the current density of electron beam by growing carbon nano tubes on a surface of the first catalytic metal layer and wall surfaces of the second and the third catalytic metal layers. CONSTITUTION: An electron source of a cold cathode includes a substrate(4), the first catalytic metal layer(6), a plurality of insulating layers(8), a plurality of additional catalytic metal layers(10,12), a gate metal layer(14), a hole portion(H), and an emitter(16). The first catalytic metal layer(6) is formed on the substrate(4). The insulating layers(8) and the additional catalytic metal layers(10,12) are formed on the first catalytic metal layer(6). The gate metal layer(14) is formed on the insulating layers(8). The hole portion(H) is used for exposing the insulating layers(8) and the additional catalytic metal layers(10,12). The emitter(16) is formed with a plurality of carbon nano tubes.
    • 目的:提供冷阴极的电子源及其制造方法,以通过在第一催化金属层的表面上生长碳纳米管和第二和第三催化金属层的壁表面来增加电子束的电流密度 。 构成:冷阴极的电子源包括基板(4),第一催化金属层(6),多个绝缘层(8),多个附加的催化金属层(10,12),栅极金属 层(14),孔部(H)和发射极(16)。 第一催化金属层(6)形成在基板(4)上。 绝缘层(8)和附加的催化金属层(10,12)形成在第一催化金属层(6)上。 栅极金属层(14)形成在绝缘层(8)上。 孔部分(H)用于暴露绝缘层(8)和附加的催化金属层(10,12)。 发射极(16)形成有多个碳纳米管。